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Bulletin of the American Physical Society

Low-loss superconducting microwave resonators with NbN films

Chengkun Song, B. P. Xiao, Matthew Ware, B. L. T. Plourde

Published Mar 25, 2011• 0 citations
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In current superconducting qubit circuit development, coherence time is limited by low-frequency flux noise introduced from localized two-level systems (TLSs) in the fabricated superconducting circuit, including superconducting materials, the interface between thin films, and the substrate. As a part of the effect to tackle this issue from a substrate standpoint, we succeed in fabricating NbN (200) oriented coplanar waveguide resonator (CPWR) on a thin titanium nitride (TiN) (200) buffered Si (100) substrate. The internal loss is close to 3 × 10-5nearphoton> ~1, improved from ~2 × 10-4in NbN (200) CPWR fabricated on MgO (100). For NbN (200) resonators grown on Si (100), the internal loss shows microwave energy independent. To further clarity if this energy independence is due to the change of substrate material, we also fabricated TiN (200) CPWR on Si (100). In contrast to NbN (200) CPWR, the loss of TiN (200) resonator shows a strong microwave dependent, an indication of TLSs originated from the interface and the surface. We suggest TLSs in NbN (200) CPWR are dominated from different mechanism other than arising from the interface and surface.
Some results of an investigation of nonlinear behavior of NbN and YBa2Cu3O7-x films at microwaves are presented. Nonlinear microwave properties of superconducting films are analyzed on the basis of dynamic Current Voltage Characteristics (CVC) measured from the film response to the short duration video pulse. Conversion loss of the microwave signal into the intermediate frequency signal under various local oscillator power has been obtained from this analysis. The experimental data for the mixing of two microwave signals are described. Mixing effect was observed on superconducting NbN and YBa2Cu3O7-x film elements in microbridge and coplanar line forms. Conversion loss of about 20 dB was obtained in the running-wave regime.
We present coplanar waveguide (CPW) microwave resonators with exceptionally low loss produced from NbN sputtered on Si. The NbN films are deposited with a modest RF substrate bias during reactive DC magnetron sputtering at a substrate temperature of 250 °C and can achieve a critical temperature as high as 15 K depending on the N2 flow rate. We measure the internal quality factors (Qi) of two such resonators at high-powers near saturation and report high-power quality factors in excess of 1.2 × 106 at 200 mK and 3.5 × 105 at 2 K. We also measure the temperature-dependent frequency shift at high power levels and the quality factor at single-photon power levels. From these measurements, we find a low-power (average photon number less than one) Qi value of 4.2 × 105 at 200 mK, which is consistent with a system limited by two-level-system loss.