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Quantum Electronics and Laser Science Conference

Inducing electron spin coherence in GaAs quantum well waveguides: spin coherence without spin precession

S.K. Sarkar, Phedon Palinginis, Hailin Wang, C. C. Kuo, Connie J. Chang-Hasnain, N. H. Kwong, Rudolf H. Binder

Published Dec 10, 2005• 2 citations
Publisher

Abstract

Electron spin coherence is induced via light-hole transitions in a quantum well waveguide without a DC magnetic field. The spin coherence is detected through effects of quantum interference in spectral domain nonlinear optical response.
DOI
10.1109/qels.2005.1548867

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We propose and analyze a novel scheme to realize electromagnetically induced transparency (EIT) via robust electron spin coherence in semiconductor quantum wells. This scheme uses light hole transitions in a quantum well waveguide to induce electron spin coherence in the absence of an external magnetic field. For certain polarization configurations, the light hole transitions form a crossed double-V system. EIT in this system is strongly modified by a coherent wave mixing process induced by the electron spin coherence.
We report the experimental demonstration of coherent Raman resonance from electron spin coherence in GaAs\mathrm{GaAs}GaAs quantum wells. Coherent Raman resonance, which is a precursor for electromagnetically induced transparency, appears in the differential transmission response from localized excitons in an external magnetic field applied in Voigt geometry. The spectral domain spin study reveals that the optical processes involved differ from those in the transient domain, leading to distinct polarization and intensity dependences.