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CoSpell CheckSpell Checkherent Charge Qubits Based on GaAs Quantum Dots With a Built-In Barrier

Leonid Evgenevich Fedichkin, Maxim Yanchenko, Valiev, K. A.

Published Jun 23, 2000• 0 citations
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Abstract

We investigated using as basic elements of the quantum computer quantum bits (qubits) semiconductor quantum dots containing one electron and consisting each of two tunnel- connected parts. as shown in Fig. I . The numerical solution of a Schrodinger equation with the account of Coulomb field of adjacent electrons shows, that in such structures the realization of a full set of basic logic operations which are necessary for fulfillment Of quantum computations is possible. Decoherence rates due to spontaneous emission of phonons and acoustic phonons (both piezoelectric and deformational) are evaluated. Durations of one- and two-qubit operations versus qubit geometry are obtained.

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Coherent charge qubits based on GaAs quantum dots with a built-in barrier

Leonid Evgenevich Fedichkin, Maxim Yanchenko, K. A. Valiev

We investigated the use of quantum bits (qubits) - semiconductor quantum dots containing one electron and each consisting of two tunnel-connected parts - as basic elements of the quantum computer. The numerical solution of a Schrödinger equation taking account of the Coulomb field of adjacent electrons shows that in such structures the realization of a full set of basic logic operations, which are necessary for fulfillment of quantum computations, is possible. Durations of one- and two-qubit operations versus qubit geometry are obtained. Decoherence rates due to spontaneous emission of phonons and acoustic phonons (both piezoelectric and deformation) are evaluated. Analysis of these rates shows the proposed qubit to be coherent enough to work for an unlimited time.

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Novel coherent quantum bit using spatial quantization levels in semiconductor quantum dot

Leonid Evgenevich Fedichkin, Maxim Yanchenko, K. A. Valiev

As basic elements of the quantum computer - quantum bits (qubits) we offer semiconductor quantum dots containing one electron each and consisting each of two tunnel-connected parts. The numerical solution of a Schroedinger equation with the account of Coulomb field of adjacent electrons shows, that in such structures the realization of a full set of basic logic operations which are necessary for fulfillment of quantum computations is possible. Durations of one- and two-qubit operations versus qubit geometry are obtained. Decoherence rates due to spontaneous emission of phonons and acoustic phonons (both piezoelectric and deformation) are evaluated. Analysis of these rates shows the offered qubit to be coherent enough to perform error correction procedures.

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Phonon decoherence in quantum dot qubits

Eduardo R. Mucciolo, Serguei Vorojtsov, Harold U. Baranger

The spin of an electron confined into a lateral semiconductor quantum dot has been proposed as a possible physical realization of a qubit. While the spin has the advantage of large decoherence times, operations with more than one qubit will necessarily involve orbital degrees of freedom, namely, charge, which is much more prone to decoherence. There are also alternative quantum dot qubit proposals that are entirely based on charge. We have used a realistic model to quantify the limitations imposed by acoustic phonons on the operation of quantum dot-based qubits. Our treatment includes essential aspects of the setup geometry, wave function profile and materials characteristics. The time dependence of the qubit density matrix is the presence of a phonon bath solved within the Born-Markov approximation. We find that the inclusion of geometric form factors makes the phonon-induced decoherence rates in double dot charge qubits nearly one order of magnitude lower than estimates previously in the literature. Moreover, our theoretical prediction for the quality factor of coherent charge oscillations based on phonon decoherence are higher than the values recently observed experimentally. This allows us to conclude that phonons are not the primary source of decoherence in double quantum dot qubits.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•May 25, 2005•1 citation

Quantum Dots: Coulomb Blockade, Mesoscopic Fluctuations, and Qubit Decoherence

Serguei Vorojtsov

In this thesis I find an analytic expression for the conductance of a single electron transistor in the regime when temperature, level spacing, and charging energy of an island are all of the same order. I also study the correction to the spacing between Coulomb blockade peaks due to finite dot-lead tunnel couplings. I find analytic expressions for both correction to the spacing averaged over mesoscopic fluctuations and the rms of the correction fluctuations. In the second part of the thesis I discuss the feasibility of quantum dot based spin- and charge-qubits. Firstly, I study the effect of mesoscopic fluctuations on the magnitude of errors that can occur in exchange operations on quantum dot spin-qubits. Mid-size double quantum dots, with an odd number of electrons in the range of a few tens in each dot, are investigated through the constant interaction model using realistic parameters. It is found that the number of independent parameters per dot that one should tune depends on the configuration and ranges from one to four. Then, I study decoherence of a quantum dot charge qubit due to coupling to piezoelectric acoustic phonons in the Born-Markov approximation. After including appropriate form factors, I find that phonon decoherence rates are one to two orders of magnitude weaker than was previously predicted. My results suggest that mechanisms other than phonon decoherence play a more significant role in current experimental setups.

arXiv:cond-mat/0604065•Apr 4, 2006•0 citations

Charge qubits in semiconductor quantum computer architecture: Tunnel coupling and decoherence

Xuedong Hu, Belita Koiller, S. Das Sarma

We consider charge qubits based on shallow donor electron states in silicon and coupled quantum dots in GaAs. Specifically, we study the feasibility of ${P}_{2}^{+}$ charge qubits in Si, focusing on single qubit properties in terms of tunnel coupling between the two phosphorus donors and qubit decoherence caused by electron-phonon interaction. By taking into consideration the multivalley structure of the Si conduction band, we show that intervalley quantum interference has important consequences for single-qubit operations of ${P}_{2}^{+}$ charge qubits. In particular, the valley interference leads to a tunnel-coupling strength distribution centered around zero. On the other hand, we find that the Si band structure does not dramatically affect the electron-phonon coupling and consequently, qubit coherence. We also critically compare charge qubit properties for $\mathrm{Si}:{P}_{2}^{+}$ and GaAs double quantum dot quantum computer architectures.

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Decoherence in semiconductor solid-state quantum computers

Diego C. B. Valente

In this dissertation we discuss decoherence in charge qubits formed by multiple lateral quantum dots in the framework of the spin-boson model and the Born-Markov approximation. We consider the intrinsic decoherence caused by the coupling to bulk phonon modes and electromagnetic environmental fluctuations. In the case of decoherence caused by phonon coupling, two distinct quantum dot configurations are studied and proposed as setups that mitigate its nocive effects : (i) Three quantum dots in a ring geometry with one excess electron in total and (ii) arrays of quantum dots where the computational basis states form multipole charge configurations. For the three-dot qubit, we demonstrate the possibility of performing one- and two-qubit operations by solely tuning gate voltages. Compared to a previous proposal involving a linear three-dot spin qubit, the three-dot charge qubit allows for less overhead on two-qubit operations. For small interdot tunnel amplitudes, the three-dot qubits have Q factors much higher than those obtained for double-dot systems. The high-multipole dot configurations also show a substantial decrease in decoherence at low operation frequencies when compared to the double-dot qubit. We also discuss decoherence due to electromagnetic fluctuations in charge qubits formed by two lateral quantum dots. We use effective circuit models to evaluate correlations of voltage fluctuations in the qubit setup. These correlations allows us to estimate energy (T1) and phase (T2) relaxation times of the the qubit system. We also discuss the dependence the quality factor Q shows with respect to parameters of the setup, such as temperature and capacitive coupling between the electrodes.

Journal of International Crisis and Risk Communication Research•Jan 1, 2009•0 citations
We investigated using as basic elements of the quantum computer quantum bits (qubits) semiconductor quantum dots containing one electron and consisting each of two tunnel- connected parts. as shown in Fig. I . The numerical solution of a Schrodinger equation with the account of Coulomb field of adjacent electrons shows, that in such structures the realization of a full set of basic logic operations which are necessary for fulfillment Of quantum computations is possible. Decoherence rates due to spontaneous emission of phonons and acoustic phonons (both piezoelectric and deformational) are evaluated. Durations of one- and two-qubit operations versus qubit geometry are obtained.
We investigated the use of quantum bits (qubits) - semiconductor quantum dots containing one electron and each consisting of two tunnel-connected parts - as basic elements of the quantum computer. The numerical solution of a Schrödinger equation taking account of the Coulomb field of adjacent electrons shows that in such structures the realization of a full set of basic logic operations, which are necessary for fulfillment of quantum computations, is possible. Durations of one- and two-qubit operations versus qubit geometry are obtained. Decoherence rates due to spontaneous emission of phonons and acoustic phonons (both piezoelectric and deformation) are evaluated. Analysis of these rates shows the proposed qubit to be coherent enough to work for an unlimited time.
As basic elements of the quantum computer - quantum bits (qubits) we offer semiconductor quantum dots containing one electron each and consisting each of two tunnel-connected parts. The numerical solution of a Schroedinger equation with the account of Coulomb field of adjacent electrons shows, that in such structures the realization of a full set of basic logic operations which are necessary for fulfillment of quantum computations is possible. Durations of one- and two-qubit operations versus qubit geometry are obtained. Decoherence rates due to spontaneous emission of phonons and acoustic phonons (both piezoelectric and deformation) are evaluated. Analysis of these rates shows the offered qubit to be coherent enough to perform error correction procedures.
The spin of an electron confined into a lateral semiconductor quantum dot has been proposed as a possible physical realization of a qubit. While the spin has the advantage of large decoherence times, operations with more than one qubit will necessarily involve orbital degrees of freedom, namely, charge, which is much more prone to decoherence. There are also alternative quantum dot qubit proposals that are entirely based on charge. We have used a realistic model to quantify the limitations imposed by acoustic phonons on the operation of quantum dot-based qubits. Our treatment includes essential aspects of the setup geometry, wave function profile and materials characteristics. The time dependence of the qubit density matrix is the presence of a phonon bath solved within the Born-Markov approximation. We find that the inclusion of geometric form factors makes the phonon-induced decoherence rates in double dot charge qubits nearly one order of magnitude lower than estimates previously in the literature. Moreover, our theoretical prediction for the quality factor of coherent charge oscillations based on phonon decoherence are higher than the values recently observed experimentally. This allows us to conclude that phonons are not the primary source of decoherence in double quantum dot qubits.
In this thesis I find an analytic expression for the conductance of a single electron transistor in the regime when temperature, level spacing, and charging energy of an island are all of the same order. I also study the correction to the spacing between Coulomb blockade peaks due to finite dot-lead tunnel couplings. I find analytic expressions for both correction to the spacing averaged over mesoscopic fluctuations and the rms of the correction fluctuations. In the second part of the thesis I discuss the feasibility of quantum dot based spin- and charge-qubits. Firstly, I study the effect of mesoscopic fluctuations on the magnitude of errors that can occur in exchange operations on quantum dot spin-qubits. Mid-size double quantum dots, with an odd number of electrons in the range of a few tens in each dot, are investigated through the constant interaction model using realistic parameters. It is found that the number of independent parameters per dot that one should tune depends on the configuration and ranges from one to four. Then, I study decoherence of a quantum dot charge qubit due to coupling to piezoelectric acoustic phonons in the Born-Markov approximation. After including appropriate form factors, I find that phonon decoherence rates are one to two orders of magnitude weaker than was previously predicted. My results suggest that mechanisms other than phonon decoherence play a more significant role in current experimental setups.
We consider charge qubits based on shallow donor electron states in silicon and coupled quantum dots in GaAs. Specifically, we study the feasibility of P2+{P}_{2}^{+}P2+​ charge qubits in Si, focusing on single qubit properties in terms of tunnel coupling between the two phosphorus donors and qubit decoherence caused by electron-phonon interaction. By taking into consideration the multivalley structure of the Si conduction band, we show that intervalley quantum interference has important consequences for single-qubit operations of P2+{P}_{2}^{+}P2+​ charge qubits. In particular, the valley interference leads to a tunnel-coupling strength distribution centered around zero. On the other hand, we find that the Si band structure does not dramatically affect the electron-phonon coupling and consequently, qubit coherence. We also critically compare charge qubit properties for Si:P2+\mathrm{Si}:{P}_{2}^{+}Si:P2+​ and GaAs double quantum dot quantum computer architectures.
In this dissertation we discuss decoherence in charge qubits formed by multiple lateral quantum dots in the framework of the spin-boson model and the Born-Markov approximation. We consider the intrinsic decoherence caused by the coupling to bulk phonon modes and electromagnetic environmental fluctuations. In the case of decoherence caused by phonon coupling, two distinct quantum dot configurations are studied and proposed as setups that mitigate its nocive effects : (i) Three quantum dots in a ring geometry with one excess electron in total and (ii) arrays of quantum dots where the computational basis states form multipole charge configurations. For the three-dot qubit, we demonstrate the possibility of performing one- and two-qubit operations by solely tuning gate voltages. Compared to a previous proposal involving a linear three-dot spin qubit, the three-dot charge qubit allows for less overhead on two-qubit operations. For small interdot tunnel amplitudes, the three-dot qubits have Q factors much higher than those obtained for double-dot systems. The high-multipole dot configurations also show a substantial decrease in decoherence at low operation frequencies when compared to the double-dot qubit. We also discuss decoherence due to electromagnetic fluctuations in charge qubits formed by two lateral quantum dots. We use effective circuit models to evaluate correlations of voltage fluctuations in the qubit setup. These correlations allows us to estimate energy (T1) and phase (T2) relaxation times of the the qubit system. We also discuss the dependence the quality factor Q shows with respect to parameters of the setup, such as temperature and capacitive coupling between the electrodes.