The quasiparticle lifetime is a crucial parameter in achieving a background limited noise equivalent power for kinetic inductance detectors. We present measurements of the quasiparticle lifetime of 150 nm thick sputtered tantalum on silicon kinetic inductance detectors using optical pulses. We find that the quasiparticle lifetime saturates at low temperatures, increases to a maximum of up to 45 μs and subsequently drops with increasing temperature. We attribute this behavior to non-uniformity in the superconductor.
The quasiparticle lifetime is a crucial parameter in achieving a background limited noise equivalent power for kinetic inductance detectors. We present measurements of the quasiparticle lifetime of 150 nm thick sputtered tantalum on silicon kinetic inductance detectors using optical pulses. We find that the quasiparticle lifetime saturates at low temperatures, increases to a maximum of up to 45 μs and subsequently drops with increasing temperature. We attribute this behavior to non-uniformity in the superconductor.
We present measurements of quasiparticle generation-recombination noise in aluminium Microwave Kinetic Inductance Detectors, the fundamental noise source for these detectors. Both the quasiparticle lifetime and the number of quasiparticles can be determined from the noise spectra. The number of quasiparticles saturates to 10 μm−3 at temperatures below 160 mK, which is shown to limit the quasiparticle lifetime to 4 ms. These numbers lead to a generation-recombination noise limited noise equivalent power (NEP) of 1.5×10−19 W/Hz1/2. Since NEP∝N qp , lowering the number of remnant quasiparticles will be crucial to improve the sensitivity of these detectors. We show that the readout power now limits the number of quasiparticles and thereby the sensitivity.
We design and fabricate a 350GHz 8×8 Al Microwave Kinetic Inductance Detector (MKIDs) array for the demonstration of its characteristics, mainly focus on the quasiparticle lifetime of the resonators. The quasiparticle lifetime data is collected by measuring a resonator’s phase response to a LED pulse at resonant frequency in a dilution refrigerator cooled to mK stage. We also measure and discuss the influence of various parameters on the change of quasiparticle lifetime, including different LED voltage supply, bath temperature of the MKIDs, and superconducting film thickness.
Microwave Kinetic Inductance Detectors (MKIDs) are extremely sensitive radiation detectors based on superconducting resonators that can be combined in large arrays on a single readout line within a limited frequency bandwidth. This makes MKIDs ideal detectors for the ultimate far-infrared observatory: a future space-based actively cooled telescope with its performance solely limited by the low universe background radiation. However, to reach these detector requirements, state-of-the-art MKIDs still need a order of magnitude improvement in device sensitivity. In this work, the MKID sensitivity is improved by reducing the aluminium volume that absorbs pair-breaking radiation into quasiparticle excitations, while making sure all radiation is still absorbed. Furthermore, a key requirement is sufficient reduction of excess noise as to keep the device intrinsically limited by thermally driven random fluctuations in the number of quasiparticles in absence of radiation, or Generation-Recombination (G-R) noise. To this end, a model is developed that describes the noise contributions as function of device geometry, readout power, material properties and radiation power. Subsequently, a realistic MKID design is presented and tested that reduces excess noise and maximises the sensitivity, expressed as Noise Equivalent Power (NEP). At high temperatures, good overall agreement is found between the measured noise spectra and the model. At low temperature T = 120 mK, the measurement results give an optical NEP similar to current state-of-the-art MKIDs. The NEP is not as low as expected due to short quasiparticle lifetimes, an unexpected decrease in the G-R noise level and a very high excess noise attributed to Two-Level Systems (TLS) noise that starts to dominate the already low G-R noise spectrum at low temperatures. Possibly, the quick quasiparticle lifetime saturation and noise level drop are caused by a strong readout power effect, as the readout power is known to create excess quasiparticles and to cause a strongly non-thermal electron energy distribution in the aluminium strip of the MKID. However, the exact microscopic details of these effects are unknown and not studied in this project. Based on the current chip design, a straightforward way to improve device performance and study the readout power effect in more detail is a reduction of the high TLS noise levels, which is possibly fabrication related. This would allow an unobstructed view of the G-R noise spectrum at low temperatures, thereby allowing both a study of the readout power effect on the quasiparticle system, and ultimately achieving the improvement in NEP needed reach the detector requirements for the ultimate space-based far-infrared observatory.
To achieve the high sensitivity requirements of future space based sub‐mm spectroscopy missions is highly challenging. Microwave Kinetic Inductance Detectors are a promising candidate since they can theoretically achieve the performance required. However, they have yet to be shown to reach this performance. We will show that this is due in part to stray light saturating the device’s sensitivity in aluminium KIDs in our experimental setup. We discuss a set of experiments that show that thermal radiation from the 3 K stage of our cooler is limiting the quasiparticle lifetime in our aluminium KIDs. Furthermore we discuss a new filtering method based upon coaxial cable filters to reduce this effect. Using the best filtering achievable we have measured a quasiparticle lifetime of 2.8 msec in a 100 nm thick Al KID.
While experimental studies of kinetic-inductance sensors have been limited so far by the temperature range near the superconducting transition, these detectors can be very sensitive at temperatures well below the transition, where the number of equilibrium quasiparticles is exponentially small. In this regime, a shift of the quasiparticle chemical potential under radiation results in the change of the kinetic inductance, which can be measured by a sensitive SQUID readout. We modeled the kinetic inductance response of detectors made from disordered superconducting Nb, NbC, and MoRe films. Low phonon transparency of the interface between the superconductor and the substrate causes substantial re-trapping of phonons providing high quantum efficiency and the operating time of ∼1 ms at ≈1 K. Due to the small number of quasiparticles, the noise equivalent power of the detector determined by the quasiparticle generation-recombination noise can be as small as ∼10−19 W/√Hz at He4 temperatures.
A microwave kinetic inductance detector (MKID) is a cutting-edge superconducting detector, and its principle is based on a superconducting resonator circuit. The superconducting transition temperature (Tc) of the MKID is an important parameter because various MKID characterization parameters depend on it. In this paper, we propose a method to measure the Tc of the MKID by changing the applied power of the readout microwaves. A small fraction of the readout power is deposited on the MKID, and the number of quasiparticles in the MKID increases with this power. Furthermore, the quasiparticle lifetime decreases with the number of quasiparticles. Therefore, we can measure the relation between the quasiparticle lifetime and the detector response by rapidly varying the readout power. From this relation, we evaluate the intrinsic quasiparticle lifetime. This lifetime is theoretically modeled by Tc, the physical temperature of the MKID device, and other known parameters. We obtain Tc by comparing the measured lifetime with that acquired using the theoretical model. Using an MKID fabricated with aluminum, we demonstrate this method at a 0.3 K operation. The results are consistent with those obtained by Tc measured by monitoring the transmittance of the readout microwaves with the variation in the device temperature. The method proposed in this paper is applicable to other types, such as a hybrid-type MKID.