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Bulletin of the American Physical Society

Photo-electron storage in a one-electron quantum dot

Deepak S. Rao, Thomas Szkopek, Hans D. Robinson, Eli Yablonovitch, H. W. Jiang

Published Mar 21, 2005• 0 citations
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There has been considerable progress in electro-statically emptying, and re-filling, quantum dots with individual electrons. Typically the quantum dot is defined by electrostatic gates on a GaAs/AlGaAs modulation doped heterostructure. We report the filling of such a quantum dot by a single photo-electron, originating from an individual photon. The electrostatic dot can be emptied and reset in a controlled fashion before the arrival of each photon. The trapped photo-electron is detected by a point contact transistor integrated adjacent to the electrostatic potential trap. Each stored photo-electron causes a persistent negative step in the transistor channel current. Such a controllable, benign, single photo-electron detector could allow for information transfer between flying photon qubits and stored electron qubits.
We demonstrate paired generation of a single photo-electron in a quantum dot and a single photon from a single polarization-entangled photon pair that is generated by spontaneous parametric down conversion. The electron is reated in a GaAs quantum dot via inter-band resonantexcitation by irradiating one of the paired photons on the dot, while the remaining photon is detected by a single photon counter. Because the paired photons are generated simultaneously, the photo-electron and the remaining photon should be observed as a coincident event if the traveling distance is equivalent between them. The coincidence is probabilistic due to the probabilistic generation of the paired photon. We observe the probability of finding the photon with the photo-electron detection substantially higher then that without the photo-electron detection and derive the coincident rate comparable to the emission rate of the original photon pairs.