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Bulletin of the American Physical Society

Experimental bring-up procedures with metrology to improve superconducting qubit performance

Erik A. Lucero, J. Kelly, Radoslaw C. Bialczak, M. Lenander, M. Mariantoni, M. Neeley, A. D. O’Connell, D. Sank, Haohua Wang, Martin P. Weides, J. Wenner, Tsuyoshi Yamamoto, Yi Yin, Andrew N. Cleland, John M. Martinis

Published Mar 18, 2010• 0 citations
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Sidewall morphology is a potentially important factor influencing superconducting qubit performance, yet its quantitative characterization remains challenging due to the absence of standardized measurement protocols. In this work, we develop a scanning probe microscopy-based measurement framework for the quantitative characterization of superconducting qubit sidewalls. The framework introduces a refined root mean square lateral sidewall roughness descriptor and a new curvature-equivalent radius for quantifying vertical sidewall morphology. The descriptors and measurement procedures are applied to different components of qubit devices, forming the basis of a proposed sidewall characterization protocol. This provides a foundation for quantitative comparisons of fabrication processes across laboratories, enabling future investigations of correlations between sidewall geometry and qubit performance.
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