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Optical and Microwave Properties of Focused Ion Beam Implanted Erbium Ions in Y2SiO5 Crystals

Nadezhda Kukharchyk, Sebastian Probst, Shovon Pal, Kangwei Xia, Roman L. Kolesov, Arne Ludwig, Alexey Vladimirovich Ustinov, Pavel A. Bushev, Andreas Dirk Wieck

Published Jan 1, 2015• 0 citations
Publisher

Abstract

We present focused ion beam implantation as a prospective tool for realizing a patterned rare-earth spin-ensemble in a solid-state substrate. We demonstrate a successful implantation with 20% of luminescent ion activation for Erbium ions in Y2SiO5 crystals.
DOI
10.1364/cleo_at.2015.jw2a.21

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Atomic and atomlike defects in the solid state are widely explored for quantum computers, networks, and sensors. Rare earth ions are an attractive class of atomic defects that feature narrow spin and optical transitions that are isolated from the host crystal, allowing incorporation into a wide range of materials. However, the realization of long electronic spin coherence times is hampered by magnetic noise from abundant nuclear spins in the most widely studied host crystals. Here, we demonstrate that Er 3+ ions can be introduced via ion implantation into TiO 2, a host crystal that has not been studied extensively for rare earth ions and has a low natural abundance of nuclear spins. We observe efficient incorporation of the implanted Er 3+ into the Ti 4+ site (>50% yield) and measure narrow inhomogeneous spin and optical line widths (20 and 460 MHz, respectively) that are comparable to bulk-doped crystalline hosts for Er 3+ . This work demonstrates that ion implantation is a viable path to studying rare earth ions in new hosts and is a significant step toward realizing individually addressed rare earth ions with long spin coherence times for quantum technologies.
Lithium niobate on insulator (LNOI), thanks to its electro-optic properties and second order nonlinearity, is one of the most promising photonic materials for on-chip implementation of a complex photonic integrated circuit (PIC) [1]. Integration of rare earth ion emitters (RIE), characterized by high coherent transitions in both optical and microwave domains, into LNOI is a very attractive perspective to fully exploit the potential of this material in quantum optics applications and for on chip light generation and amplification. By choosing Erbium ions these functionalities can be implemented at telecom wavelengths (~1550 nm). Erbium integration in LNOI can be achieved using the smart cut technique [2]. However, this approach implies heating the material up to ~1100 °C, approaching the Curie temperature of lithium niobate (~1200 °C). Ion implantation also permits the incorporation of RIE into the lithium niobate (LN) crystal structure, operating at lower temperature with high spatial precision of the doped region in a complex PIC.
Rare earth ions are known as promising candidates for building quantum light-matter interface. However, tunable photonic cavity access to rare earth ions in their desired host crystal remains challenging. Here, we demonstrate the integration of erbium doped yttrium orthosilicate (Er3+:Y2SiO5) with thin-film lithium niobate photonic circuit by plasma-activated direct flip chip bonding. Resonant coupling to erbium ions is realized by on-chip electro-optically tuned high Q lithium niobate micro-ring resonators. Fluorescence and absorption of erbium ions at 1536.48 nm are measured in the waveguides, while the collective ion-cavity cooperativity with micro-ring resonators is assessed to be 0.36. This work presents a versatile scheme for future rare earth ion integrated quantum devices.