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Acta Physica Sinica

Quantum corrections in fitting the switching current distributions of intrinsic Josephson junction

Da-Jian Cui, Lin De-Hua, Haifeng Yu, Zhihui Peng, Zhu Xiao-Bo, Zheng Dong-Ning, X.N. Jing, Lü Li, Zhao Shi-Ping, (1)中国科学院物理研究所，北京 100190; (2)重庆大学物理系，重庆 400044; (3)重庆大学物理系，重庆 400044； 中国科学院物理研究所，北京 100190

Published Jan 1, 2008• 5 citations
Publisher

Abstract

In the process of theoretical fitting the switching current distributions of Josephson junction,macroscopic quantum tunneling (MQT) and thermally activated process are usually considered.Analysis of the results for a Bi2Sr2CaCu2O8+δ surface intrinsic Josephson junction (SIJJ), quantum corrections are considered at the intermediate areas between MQT and thermally activated process. It is found that quantum corrections lead to a perfect fit to the experimental data, which may be useful for the future studies of MQT in SIJJs and their possible applications as a superconducting qubit.

DOI
10.7498/aps.57.5933

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In the process of theoretical fitting the switching current distributions of Josephson junction,macroscopic quantum tunneling (MQT) and thermally activated process are usually considered.Analysis of the results for a Bi2Sr2CaCu2O8+δ surface intrinsic Josephson junction (SIJJ), quantum corrections are considered at the intermediate areas between MQT and thermally activated process. It is found that quantum corrections lead to a perfect fit to the experimental data, which may be useful for the future studies of MQT in SIJJs and their possible applications as a superconducting qubit.
We report an experimental observation of the macroscopic quantum tunnelling (MQT) in a d-wave high-temperature superconductor (HTSC) Bi2Sr2CaCu2O8+δ intrinsic Josephson junction (IJJs). It is well known that the current-biased Josephson tunnel junction provides an ideal stage for studying a variety of macroscopic quantum phenomena such as MQT. They have been studied and observed in low-temperature superconductor (LTSC) Josephson junctions since the early 1980s and have been established well by now. On the other hand, in the case of HTSC the d-wave pairing symmetry allows for dissipative quasiparticle excitations within the superconducting energy gap, which is expected to severely interfere with an observation of MQT. Contrary to this naive conception, our experimental results have explained that the effects of the nodal quasiparticles are not strong enough to obscure the observation of the MQT. Furthermore, we found that the MQT in IJJs was observed at approximately 1 K, which was ten times higher than that of LTSC Josephson junctions. This higher classical-to-quantum crossover temperature is due to their high plasma frequency. We also discuss the resonant activation of IJJs in the presence of microwave radiation.
A nanometer-thick small mesa consiting of only two or three Bi 2 Sr 2 CaCu 2 O y intrinsic Josephson junctions (IJJs) is studied through the switching current distribution measurements down to 0.4 K. Experimental results clearly show that the first switching events from the zero-voltage state for 1 K < T < 4 K are successfully described by a conventional thermal activation (TA) theory for a single Josephson junction, and that they become independent of temperature below T* ∼ 0.7 K. We observe the microwave-induced peak in the switching distribution at 0.4 K, which is induced by the microwave irradiation at 55 GHz. These results strongly suggest that the system crossovers to macroscopic quantum tunneling (MQT) regime below T* , which is as high as the previously reported value for a stacked IJJs with several tens of junctions, in contrast to the recent result on a similar mesa-structured surface IJJ.
We investigated macroscopic quantum tunneling (MQT) of Bi2Sr2CaCu2Oy{\text{Bi}}_{2}{\text{Sr}}_{2}{\text{CaCu}}_{2}{\text{O}}_{y}Bi2​Sr2​CaCu2​Oy​ intrinsic Josephson junctions (IJJs) for two device structures. One is a small mesa, which is a few nanometers thick with only two or three IJJs, and the other is a stack of a few hundred IJJs in a narrow bridge structure. The experimental results regarding the switching-current distribution for the first switch from the zero-voltage state were in good agreement with the conventional theory for a single Josephson junction, indicating that the crossover temperature from thermal activation to the MQT regime for the former device structure was similar to that for the latter device structure. Together with the observation of multiphoton transitions between quantized energy levels in the MQT regime, these results strongly suggest that the observed MQT behavior is intrinsic to a single IJJ in high-Tc{T}_{c}Tc​ cuprates and is independent of the device structure. The switching-current distribution for the second switch from the first resistive state, which was carefully distinguished from the first switch, was also compared with respect to the two device structures. In spite of the differences between the heat transfer environments, the second switch exhibited a similar temperature-independent behavior for both devices up to a much higher temperature than the crossover temperature for the first switch. We argue that this cannot be explained in terms of self-heating caused by dissipative currents after the first switch. As possible candidates for this phenomenon, the MQT process for the second switch and the effective increase in the electronic temperature due to the quasiparticle injection are discussed.
We study macroscopic quantum tunneling (MQT) in ccc-axis twist Josephson junctions made of high-Tc{T}_{c}Tc​ superconductors in order to clarify the influence of the anisotropic order parameter symmetry (OPS) on MQT. The dependence of the MQT rate on the twist angle $\ensuremath{\gamma}$ about the ccc axis is calculated by using the functional integral and the bounce method. Due to the ddd-wave OPS, the $\ensuremath{\gamma}$ dependence of standard deviation of the switching current distribution and the crossover temperature from thermal activation to MQT are found to be given by $\mathrm{cos}\phantom{\rule{0.2em}{0ex}}2\ensuremath{\gamma}$ and $\sqrt{\mathrm{cos}\phantom{\rule{0.2em}{0ex}}2\ensuremath{\gamma}}$, respectively. We also show that a dissipative effect resulting from the nodal quasiparticle excitation on MQT is negligibly small, which is consistent with recent MQT experiments using ${\mathrm{Bi}}_{2}{\mathrm{Sr}}_{2}\mathrm{Ca}{\mathrm{Cu}}_{2}{\mathrm{O}}_{8+\ensuremath{\delta}}$ intrinsic junctions. These results indicate that MQT in ccc-axis twist junctions becomes a useful experimental tool for testing the OPS of high-Tc{T}_{c}Tc​ materials at low temperature, and suggest high potential of such junctions for qubit applications.
Measurements of macroscopic quantum tunnelling (MQT) in intrinsic Josephson junctions (IJJs) suggest that they may be suitable as qubits. An advantage of using IJJs over trilayers is the absence of any artificial barrier and hence the possible absence of decohering two-level fluctuators. A disadvantage is that it is difficult to fabricate single IJJs. Hence all IJJ MQT experiments have been carried out on arrays of many IJJs in series. Since MQT is suppressed by dissipation, it is important (a) to understand the role of dissipation on the dynamics of IJJs and (b) to consider how the dissipation and the dynamics change as a function of the number of junctions in the array which are in the voltage state. We have measured distributions of the nth-order switching current in TlBaCaCuO IJJ arrays, where n indicates switching from n to n+1 junctions being in the voltage state. The junctions show conventional underdamped behaviour at temperatures below some temperature T*, with a suppression of the width of the distribution above T*. We find that T* depends upon n. For n = 0 (i.e. switching from the supercurrent branch), T* is less than 4.2 K. For n > 0, we measured T* values between 20 K and 40 K. Calculations and simulations show that a change in T* results from a change in Q. Analysis suggests that the Q of the IJJs is determined by the environmental impedance when all junctions in the array are in the zero-voltage state, whereas having one junction or more in the voltage state isolates the array from the environment leading to a higher Q. We discuss our data in the context of possible qubit applications.
The macroscopic quantum tunneling (MQT) in the current-biased intrinsic Josephson junctions (IJJs) of high- T c cuprates has attracted much attention for decades. Although the MQT for the phase switches from the zero to the first voltage state (1st SW) in the multiple-branched I-V curves is well explained by the conventional theory, the occurrence of MQT for the higher order switches such as the switch from the 1st to 2nd voltage state (2nd SW) has been still debated. Here, we present an experimental study on the phase switches of small IJJs fabricated from underdoped Bi 2 Sr 2 (Ca,Y)Cu 2 O y . We observed the single photon transition between quantized energy levels in the 3rd phase switches at 59.15 GHz and 2 K. The comparison with the previous studies on the nearly optimal-doped Bi 2 Sr 2 CaCu 2 O y clearly suggests a possibility that the MQT rate for the higher-order phase switches is commonly enhanced by the effective suppression of the energy barrier for the higher-order phase escape due to the phase-running state after the 1st SW, in spite of the large difference in a critical current density and T c .