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Molecular dynamics as a tool for calculating optical properties in rare-earth ion doped solids

Sverker Edvardsson

Published Jan 1, 1993• 1 citation
OpenAlex

Abstract

Molecular dynamics as a tool for calculating optical properties in rare-earth ion doped solids

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Without using any trapping lasers, rare-earth (RE) ions can be doped into some nanofabricated materials in form of nanocrystals in a solid state matrix, thus rendering a natural trap for potential application as a quantum computing device. In particular, passive nuclear spin states of RE ions can be utilized as (i) optical quantum memory (with huge density as yielded from nanocrystals), (ii) qubits by encoding in ground hyperfine states and operated as (iii) two-qubit gate when transferring them to active magnetized electronic states. A feasible implementation of qubits is realised by using those doped RE ions whose open-shell (for inner highly shielded 4f4 f4f shell electrons) energy levels and statevectors are well described by the crystal field (CF) interaction and hyperfine coupling in which the Hamiltonian is composed of various freeion interactions, the CF potential, electronic and nuclear Zeeman effects as well as the hyperfine interaction. For those qubit encoded in the two ground hyperfine states of RE ions, they can have fairly long lifetimes of days and coherence times (from 1.3s for Er3+\mathrm{Er}^{3+}Er3+ to 6 hours for Eu3+\mathrm{Eu}^{3+}Eu3+) due to the unique spectroscopic properties of RE ions. Because of the recent progress in optical single-ion detection for addressing individual qubits with a specific frequency channel, RE ions could be packed in a solid state 3D matrix at nanometer spacing, hence rendering very high qubit densities for quantum memories. Meanwhile, this configure also leads to strong dipole-dipole interactions (or high connectivity) between qubits which are not nearest neighbors. In this study, Kramers ions like 167Er{ }^{167} \mathbf{E r}167Er and 171Yb{ }^{171} \mathbf{Y b}171Yb doped in yttrium orthosilicate Y2SiO5{Y}_{2} {SiO}_{5}Y2​SiO5​ (YSO) nanocrystals will be investigated as a promising system for quantum computing because of their weak spin bath and possibility for being directly milled in single nanocrystals as nano-resonators. By using the famous Wien2k package to carry out the first-principles calculations, we can obtain the CF parameters and hyperfine constants as well as various electronic properties like energy gap and band structure for those Kramers RE ions doped in YSO. We shall present some essential findings from first-principles calculations to obtain various properties of the ground and excited CF and hyperfine states for those RE ions with an aim to optimize RE ions doping in YSO nanocrystals for quantum memories and qubits, contributing to scalable quantum computing architectures.
Quantum information uses special properties of quantum systems to manipulate or transmit data. This results in new processes, which are impossible to obtain with classical devices. For example, quantum computing and quantum storage, which are two important fields in quantum information research, aim respectively at performing very fast calculations and at storing quantum states of photons. These two applications could be obtained in solid-state systems using rare earth doped crystals. In this context, the most important property of these materials is the long coherence lifetimes of rare earth ion optical and hyperfine transitions. This allows one to create long-lived superposition states, which is a fundamental requirement for efficient quantum computing and storage. Promising results have already been demonstrated in rare earth doped crystals but it will be difficult to improve them with current materials. In this paper, we discuss the general and specific requirements for rare earth ions and crystals in order to perform quantum computing with a large number of quantum bits as well as all solid-state quantum storage. We also present the properties of a few recently studied crystals: Ho3+:YVO4, Ho3+:LuVO4 (quantum computing) and Tm3+:Y3Al5O12 (quantum storage).