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Photonic Crystal Coupled to N-V Center in Diamond

Luca Marseglia

Published Mar 30, 2012• 0 citations
Publisher

Abstract

In this work we aim to exploit one of the most studied defect color centers in diamond , the negatively charged nitrogen vacancy (NV -) color center, a three level system which emits a single photon at a wavelength of 637nm providing a possible deterministic single photon emitter very useful for quantum computing applications.Moreover the possibility of placing aNV -in a photonic crystal cavity will enhance the coupling between photons and NV -center.This could also allow us to address the ground state of the NV -center, whose spin, could be used as qubit.It is also remarkable to notice that for quantum computing purposes it is very useful to increase the light collection from the NV -centers, and in order to do that we performed a study of another structure, the solid immersion lens, which consists of an hemisphere whose center is at the position of an emitter, in this case the NV -center, increasing the collection of the light from it.In order to create these structures we used a method called focused ion beam which allowed us to etch directly into the diamond many different kinds of structures.In order to allow an interaction between these structures and the NV -centers we need to have a method to locate the NV -center precisely under the etched structures.We developed a new technique (Marseglia et al. (2011)) where we show how to mark a single NV -center and how to etch a desired structure over it on demand.This technique gave very good results allowing us to etch a solid immersion lens onto a NV -previously located and characterized, increasing the light collection from the NV -of a factor of 8×.

DOI
10.5772/32178

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Summary form only given. Deterministic coupling of a single emitter to a photonic crystal cavity is an important step towards the realization of integrated solid-state devices for quantum photonics. As single emitters, color centers in diamond, e.g. the Nitrogen-Vacancy (NV) center or the Silicon-Vacancy (SiV) center have attracted significant interest due to their extraordinary properties like long spin-coherence times or narrowband and bright single photon emission, respectively. For the realization of recent proposals like cavity-enhanced spin measurements or cavity-enhanced single photon sources, it is necessary to couple single color centers to a cavity with small mode volume and high quality factor. Photonic crystal cavities directly fabricated within a monocrystalline diamond membrane are well suited for this task, as they offer tiny mode volumes for efficient emitter-cavity coupling as well as scalable architectures for integrated photonic devices.In order to achieve controlled coupling of a color center to a photonic crystal cavity, several challenges have to be tackled, e.g. exact emitter positioning and alignment of its dipole moment with the cavity electric field as well as the ability for cavity tuning. For deterministic emitter-cavity positioning, two different routes can be pursued: In the first approach, a single emitter is localized within the diamond, its dipole orientation is determined and the cavity is subsequently structured around it. In the second approach, the cavity is fabricated first and a single color center is created within the cavity, e.g. via ion implantion or creation of vacancies. Here we present strategies to realize both methods for deterministic emitter-cavity coupling. For the first approach, we use a monocrystalline diamond film containing single SiV centers. Figure 1a) shows a fluorescence scan of a single SiV center with position markers next to it. The position markers are subsequently used to structure a photonic crystal cavity around the color center using focused ion beam milling [1]. Figures 1b) and c) show SEMimages before and after the cavity fabrication. The photonic crystal lattice constant a ≈ 283nm is chosen such that the cavity modes are red shifted with respect to the SiV emission lines. Using an oxidation tuning method, the cavity modes are tuned into resonance with the zero-phonon line at 740nm of a single SiV center (see Fig. 1d)). On resonance, we measure an intensity enhancement by a factor of 3.8 compared to the off-resonant case.

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arXiv:1005.2204•Nano Letters•Sep 8, 2010•353 citations
In this work we aim to exploit one of the most studied defect color centers in diamond , the negatively charged nitrogen vacancy (NV -) color center, a three level system which emits a single photon at a wavelength of 637nm providing a possible deterministic single photon emitter very useful for quantum computing applications.Moreover the possibility of placing aNV -in a photonic crystal cavity will enhance the coupling between photons and NV -center.This could also allow us to address the ground state of the NV -center, whose spin, could be used as qubit.It is also remarkable to notice that for quantum computing purposes it is very useful to increase the light collection from the NV -centers, and in order to do that we performed a study of another structure, the solid immersion lens, which consists of an hemisphere whose center is at the position of an emitter, in this case the NV -center, increasing the collection of the light from it.In order to create these structures we used a method called focused ion beam which allowed us to etch directly into the diamond many different kinds of structures.In order to allow an interaction between these structures and the NV -centers we need to have a method to locate the NV -center precisely under the etched structures.We developed a new technique (Marseglia et al. (2011)) where we show how to mark a single NV -center and how to etch a desired structure over it on demand.This technique gave very good results allowing us to etch a solid immersion lens onto a NV -previously located and characterized, increasing the light collection from the NV -of a factor of 8×.
Summary form only given. Deterministic coupling of a single emitter to a photonic crystal cavity is an important step towards the realization of integrated solid-state devices for quantum photonics. As single emitters, color centers in diamond, e.g. the Nitrogen-Vacancy (NV) center or the Silicon-Vacancy (SiV) center have attracted significant interest due to their extraordinary properties like long spin-coherence times or narrowband and bright single photon emission, respectively. For the realization of recent proposals like cavity-enhanced spin measurements or cavity-enhanced single photon sources, it is necessary to couple single color centers to a cavity with small mode volume and high quality factor. Photonic crystal cavities directly fabricated within a monocrystalline diamond membrane are well suited for this task, as they offer tiny mode volumes for efficient emitter-cavity coupling as well as scalable architectures for integrated photonic devices.In order to achieve controlled coupling of a color center to a photonic crystal cavity, several challenges have to be tackled, e.g. exact emitter positioning and alignment of its dipole moment with the cavity electric field as well as the ability for cavity tuning. For deterministic emitter-cavity positioning, two different routes can be pursued: In the first approach, a single emitter is localized within the diamond, its dipole orientation is determined and the cavity is subsequently structured around it. In the second approach, the cavity is fabricated first and a single color center is created within the cavity, e.g. via ion implantion or creation of vacancies. Here we present strategies to realize both methods for deterministic emitter-cavity coupling. For the first approach, we use a monocrystalline diamond film containing single SiV centers. Figure 1a) shows a fluorescence scan of a single SiV center with position markers next to it. The position markers are subsequently used to structure a photonic crystal cavity around the color center using focused ion beam milling [1]. Figures 1b) and c) show SEMimages before and after the cavity fabrication. The photonic crystal lattice constant a ≈ 283nm is chosen such that the cavity modes are red shifted with respect to the SiV emission lines. Using an oxidation tuning method, the cavity modes are tuned into resonance with the zero-phonon line at 740nm of a single SiV center (see Fig. 1d)). On resonance, we measure an intensity enhancement by a factor of 3.8 compared to the off-resonant case.
Recently, developments in novel and high-purity materials allow for the presence of a single, solitary crystalline defect to define the electronic, magnetic, and optical functionality of a device. The discrete nature of the active dopant, whose properties are defined by a quantum mechanical description of its structure, enables radically new quantum investigations and applications in these arenas. Finally,there has been significant development in large-scale device engineering due to mature semiconductor manufacturing techniques. The diverse set of photonic device architectures offering light confinement, guiding, and extraction is a prime example. These three paradigms – solitary dopant photonics and optoelectronics (solotronics), quantum science\tand technology, and device engineering – merge in the development of novel quantum photonic devices for the next generation of information processing systems. We present in this thesis a series of investigations of optical nanostructures for single optically active spins in single crystal diamond. Chapter 1 introduces the Nitrogen-Vacancy (NV) color center, summarizes its applications, and motivates the need for their integration into photonic structures. Chapter 2 describes two prototype nanobeam photonic crystal cavities for generating strong light-matter interactions with NV centers. The first device consists of a silicon nitride photonic crystal nanobeam cavity with high quality factor \\(Q \\sim 10^5\\) and small mode volume \\(V \\sim 0.5*(\\lambda/n)^3\\). The second device consists of a monolithic diamond nanobeam cavity fabricated with the focused ion beam (FIB) directly in a single crystal diamond sample. Chapter 3 presents a high-efficiency source of single photons consisting of a single NV center in a photonic diamond nanowire. Early FIB prototypes are described, as is the first successful realization of the device achieved via reactive ion etching nanowires in a single crystal diamond containing NV centers, and finally a variation of this approach based on incorporation of NV centers in pure diamond via ion implantation. In chapter 4 we consider the optimal design of photonic devices offering both collection efficiency and cavity-enhancements and extend the model of the NV center to include photonic effects. In chapter 5 we briefly introduce a novel optically active spin discovered in a diamond nanowire. Finally, in chapter 6 we conclude with several proposals to extend this research program.
We use focused ion beam (FIB) etching to create suspended photonic crystal cavities in diamond. Our goal is to enhance and control the spontaneous emission of single N-V colour centres, which act like single `two-level atoms' emitting single photons. The single nitrogen-vacancy (N-V) colour centre in diamond has attracted a lot of interest because it can be optically addressed, is photostable at room temperature and has a paramagnetic ground state whose spin can be initialized and read-out optically. By enclosing the (N-V) colour centre in a resonant cavity we aim to develop rapid readout of this optically addressable single spin. We show a technique using FIB and confocal microscopy to locate single N-V centres and discuss progress towards etching cavities around single centres.
The development of reliable devices to generate single photons is crucial for applications in quantum cryptography, as well as for fundamental quantum optics experiments. Due to their extremely high photostability at room temperature, optically active defects in solids, the so called color centers, are among the most promising candidates. Single NV (nitrogen-vacancy) centers in diamond have been demonstrated to be able to generate single photons and have already shown advantages compared to attenuated laser pulses in a quantum cryptography experiment. The nitrogen-vacancy center (NV center) in diamond consists of a substitutional nitrogen atom and an adjacent vacancy. This complex exhibits an optical transition with a fluorescence lifetime of 11.6 ns. The room temperature spectrum of the NV center consists of the zero-phonon line at 637 nm and broad phononic sidebands with a FWHM of more than 100 nm. Due to the existence of a shelving level the efficiency of the NV center as a single photon source is limited. Additionally, the high diffraction index of bulk diamond restricts the efficiency to collect the fluorescence light.
Single-photon sources represent a key enabling technology in quantum optics, and single color centers in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature. The widely studied nitrogen-vacancy (NV) centers are characterized by several limitations, thus other defects have recently been considered, with a specific focus of centers emitting in the near-infra red (NIR). In the present work, we report on the coupling of native NIR-emitting centers in high-quality single-crystal diamond with solid immersion lens (SIL) structures fabricated by focused ion beam (FIB) lithography. The reported improvements in terms of light collection efficiency make the proposed system an ideal platform for the development of single-photon emitters with appealing photophysical and spectral properties.
We describe and experimentally demonstrate a technique for deterministic, large coupling between a photonic crystal (PC) nanocavity and single photon emitters. The technique is based on in situ scanning of a PC cavity over a sample and allows the precise positioning of the cavity over a desired emitter with nanoscale resolution. The power of the technique is demonstrated by coupling the PC nanocavity to a single nitrogen vacancy (NV) center in diamond, an emitter system that provides optically accessible electron and nuclear spin qubits.