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Conference on Lasers and Electro-Optics

Tm/sup 3+/ materials for coherent transient optical memories and signal processors

Randy W. Equall, G.M. Wang, Gene White, R. L. Cone, M. J. M. Leask, R. M. Macfarlane, Ralph L. Hutcheson

Published Jun 2, 1996• 0 citations
OpenAlex

Abstract

Summary form only given. Demonstration of practical coherent transient-based optical signal processing and optically-addressed data storage using Tm/sup 3+/:YAG has stimulated a search for materials with better capabilities in the 790-nm region accessible by GaAlAs semiconductor lasers. These devices have the potential to increase optical storage densities by 10/sup 4/ or more and to provide GHz data rates.

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Summary form only given. Demonstration of practical coherent transient-based optical signal processing and optically-addressed data storage using Tm/sup 3+/:YAG has stimulated a search for materials with better capabilities in the 790-nm region accessible by GaAlAs semiconductor lasers. These devices have the potential to increase optical storage densities by 10/sup 4/ or more and to provide GHz data rates.
Swept-carrier time-domain optical memory [Opt. Lett. 17, 535 (1992)] has been proposed as a means of storing optical data streams in inhomogeneously broadened spectral recording materials. The process provides for full utilization of the material storage bandwidth regardless of the data rate and permits storage of data sequences with durations exceeding the material dephasing time. We report what we believe is the first experimental demonstration of this storage process. Our experiments, implemented with frequency-swept diode lasers and Tm(3+):YAG storage material, demonstrate single-event storage of 98-bit data streams whose duration is an order of magnitude longer than the material dephasing time.
A performance analysis of an optical coherent transient optical memory system is presented. The simplest configuration of a coherent transient memory is assumed in which a large block of bits are stored at each laser spot by a single data pulse. The reference and recall beams are assumed to be temporally brief and a photon gated storage medium is assumed. Even with this basic system configuration, the performance predictions yield promising results. With the assumed material parameters, data rates of 5 GHz, data block sizes of 4 X 105, and storage densities up to 4.3 X 1011 bits per cm2 are predicted.
The objective of this research was to quantitatively evaluate the concept of time-domain optical memory (TDOM) using the hole-burning mechanism. The TDOM concept offers both high speed and high memory density. The advantage of TDOM over traditional semiconductor memory is its inherent parallelism, which allows data to be stored and retrieved from the memory at much higher speed. The practical success of the proposed memory, therefore, depends critically on-among other issues-the storage, retrieval, and processing of images. In addition, new data storage techniques are needed to implement a practical memory. The last three years of this research program have focused on (1) development of new phase modulation techniques to enhance the storage, retrieval, and integrity of the stored information; (2) experimental studies of image storage and phase conjugate retrieval; (3) Image processing; and (4) practical holographic storage of images by using the hybrid time-frequency approach. Specifically, SRI demonstrated data encryption by phase modulating the read and write pulses. Image correlation and convolution was demonstrated and its implication for pattern recognition examined. Finally, this laboratory demonstrated high-fidelity random access and retrieval using holographic storage in Pr3+: YA103 with a single-frequency ring laser. These experiments have clearly demonstrated the practical viability ofmore » TDOM with existing technology. In the next stage of the research, the performance Issues such as bit-error-rates, signal-to-noise ratios, and laser stability need to be addressed. Stimulated photon echoes, Optical memory, Image processing, Pattern recognition, Phase conjugation.« less
Abstract : Optical materials for spectral hole burning and coherent transient applications were designed and evaluated, emphasizing relevance to devices including high performance memory, signal processing, high speed holographic recording and analysis, and optical switches, routers, and buffers. The ultimate limits on material performance set by atomic mechanisms were determined. The developed materials contained Eu3+, Pr3+, Tm3+, Tb3+, or Er3+ active ions in various oxide hosts. The first report was made of an Er3+ material for hole burning applications in 1.5 micron optical communications bands. Eight Er3+ materials for applications at 1.5 microns in optical routers and buffer memories were designed and characterized. A correlator' signal processing capability was demonstrated, and the first report was made of operation of a 1.5 micron packet header decoder for all-optimized optical packet switching in optical communications along optical fibers at 1531 nm. Eu3+:Y2SiO5 was optimized for use in 100 GByte ODRAM optical memory devices, considering Eu3+ concentration and temperature. Eight Tm3+ compounds for signal processing applications, such as true time delays for phased-array radar, at diode laser wavelengths near 795 nm were designed and characterized. Eight Tb3+ compounds for photon gated spectral hole burning were designed and characterized, and gated hole burning was observed in Tb3+:YAIO3.