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Acta Physica Sinica

Host sensitized infrared quantum cutting of Er0.1Gd0.9VO4 crystal

Xiaobo Chen, Xu Yi-Zhuang, Chunlin Zhang, Huimin Zhang, Zhang Yun-Zhi, Zhou Gu, Li Song

Published Jan 1, 2011• 0 citations
Publisher

Abstract

The infrared quantum cutting phenomena of Er0.1Gd0.9VO4 crystal are studied in the present article. An interesting host sensitized infrared quantum cutting phenomenon is found, that is, there is a strong and broad excitation peak at 337.0 nm wavelength for its excitation spectrum of 1537.5 nm 4I13/24I15/2 infrared fluorescence. It can be recognized that the 337.0 nm excitation peak corresponds to the absorption of host GdVO4 crystal. Meanwhile, it is found that the integral fluorescence intensity of 1537.5 nm 4I13/24I15/2 infrared fluorescence, when the host absorption band is excited by 337.0 nm light, is about ten times larger than that of the sum of all other fluorescence intensities. Its infrared quantum cutting efficiency is similar to that of the excited 2H11/2 energy level and larger than that of others.

DOI
10.7498/aps.60.107803

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The infrared quantum cutting phenomena of Er0.1Gd0.9VO4 crystal are studied in the present article. An interesting host sensitized infrared quantum cutting phenomenon is found, that is, there is a strong and broad excitation peak at 337.0 nm wavelength for its excitation spectrum of 1537.5 nm 4I13/24I15/2 infrared fluorescence. It can be recognized that the 337.0 nm excitation peak corresponds to the absorption of host GdVO4 crystal. Meanwhile, it is found that the integral fluorescence intensity of 1537.5 nm 4I13/24I15/2 infrared fluorescence, when the host absorption band is excited by 337.0 nm light, is about ten times larger than that of the sum of all other fluorescence intensities. Its infrared quantum cutting efficiency is similar to that of the excited 2H11/2 energy level and larger than that of others.
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The infrared quantum cutting phenomena, which is an international hot research field, of Er1.0P5O14 noncrystalline glass are studied by the present paper for the first time. The 1537.0nm infrared fluorescence of Er1.0P5O14 noncrystalline glass is confirmed to be the multi-photon quantum cutting fluorescence by computation and comparison between absorption and excitation spectra. It is found that the 4I13/2→4I15/2 quantum cutting fluorescence is very strong, induced by the excited 2H11/2, 4G11/2, and 4G9/2 energy levels. Its mechanism is thoroughly analyzed based on the calculation of spontaneous emission rates, nonradiative multiphonon relaxation rates and energy transfer rates. It is found the strong downconversion energy transfers {2H11/2→4I9/2,4I15/2→4I13/2},{4G11/2→4I13/2, 4I15/2→2H11/2},{4G9/2→4F7/2,4I15/2→4I13/2} 和 {4G9/2→4I13/2, 4I15/2→2H11/2} are responsible for the strong infrared three-photon and four-photon quantum cutting fluorescence of Er1.0P5O14 noncrystalline glass. The present research is significant for enhancing solar cell efficiency.
Infrared quantum cutting of rare earth ion is an international hot research field. It is significant for the enhancement of solar cell efficiency and for the reduction of solar cell price. The present paper summarizes the research significance of infrared quantum cutting of rare earth ion. Based on the summarization of general principle and loss mechanism of solar cell, the possible method to enhance the solar cell efficiency by infrared quantum cutting is analyzed. Meanwhile, the present paper summarizes the infrared quantum cutting phenomena of Er3+ ion single-doped material. There is intense 4I13/2 --> 4I15/2 infrared quantum cutting luminescence of Er3+ ion when the 2H11/2 energy level is excited. The intense {2H11/2 --> 4I9/2, 4I15/2 --> 4I13/2} cross energy transfer is the main reason for the result in the high quantum cutting efficiency when the 2H11/2 energy level is excited.
Strong green and middle infrared (MIR) photoluminescence (PL) has been observed in Er3+: GdVO4 crystal excited by a 488 nm argon laser. Nearly 25 times of magnitude increase of PL intensity has been obtained for both green and MIR emissions under moderate low magnetic field of 4 T. The temperature- and magnetic field- dependent PL demonstrated that both excitation and emission energy transitions have made contributions to the PL enhancement, and stronger PL enhancement usually happens at the transitions with energy levels possessing larger population of electrons. The results are important and encouraging since it not only reveals the originations of the magnetic induced PL enhancement, but also drag people closer to the utilization of magnetic induced PL modulations under moderate low magnetic field.
A negative input-output characteristic was obtained in an erbium doped yttrium aluminum garnet crystal which has multiple-level energy structure: absorption can occur between a ground level and an excited level (4I15/2-4I9/2) and between two other excited levels (4I13/2-2H11/2) in Er3+. It was caused at the wavelength between 786.6 and 788.4nm by the variation of incident laser intensity in the intensity range of 60 nW/cm2 to 100 W/cm2. It is considered that an enhanced absorption occurs due to the excited state absorption from 4I13/2 to 2H11/2. Because its spectra match the wavelength dependence of the incident laser. In addition, optical signal inverter phenomenon was observed using a laser diode modulated with 10 MHz. By considering multiple excited state absorption in detail, active functions such as an optical signal inverter could be derived from the negative nonlinear absorption effect.