NbTiN/SiO 2 /NbTin and NbTiN/SiO 2 /Al Tuning Circuits for 1 THz Waveguide SIS Mixers
Brian D. Jackson, Gert J. de Lange, W. M. Laauwen, J. R. Gao, N. N. Iosad, T. M. Klapwijk
Abstract
Waveguide SIS mixers are presented in which Nb/Al-AlOx/Nb tunnel junctions are integrated with both NbTiN/SiO2/NbTiN and NbTiN/SiO2/Al tuning circuits. The mixers with a NbTiN/SiO2/NbTiN tuning circuit yield relatively low receiver noise temperatures between 700 and 830 GHz, but their sensitivity drops significantly above ~ 850 GHz. In contrast, low-noise heterodyne mixing near 1 THz is observed in mixers incorporating a NbTiN/SiO2/Al tuning circuit. In particular, an uncorrected receiver noise temperature of 585 K is measured at 970 GHz. From an analysis of the receiver sensitivity and gain, it is determined that the loss in the NbTiN ground plane is low (≤ 0.6 dB) below 970 GHz. A decrease in receiver sensitivity above 1 THz is attributed to an onset of rf loss in the NbTiN.