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Quantum Electronics and Laser Science Conference

Coherent excitation dynamics controlled by localized photons

Kiyoshi Kobayashi, Akira Shojiguchi, Suguru Sangu, Kazuo Kitahara, Motoichi Ohtsu

Published Jun 25, 2003• 0 citations
Publisher

Abstract

Summary form only given. We report a formulation and simulation based on such a localized photon picture to discuss coherent excitation dynamics of QDs driven by the optical near fields, resulting in an interesting possibility for a photonic switch and source on a nanometer scale.
DOI
10.1109/qels.2002.1031165

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This paper describes a novel model for the dynamics of the dipole coherence in two-level quantum dots (QDs) interacting with localized photons. The model is based on the fact that the coupling on a nanometer scale between QDs via optical near fields represented by localized photons is much stronger than that via propagating far fields. The model predicts that an intriguing phenomenon such as a collective dipole oscillation occurs if the initial quantum states are locally manipulated. The origin of this kind of collective behaviour is discussed in view of Dicke's superradiance.
Using density operator formalism, we discuss interdot excitation energy transfer dynamics driven by the optical near-field and phonon bath reservoir, as well as coherent excitation dynamics of a quantum dot system. As an effective interaction between quantum dots induced by the optical near-field, the projection operator method gives a renormalized dipole interaction, which is expressed as a sum of the Yukawa functions and is used as the optical near-field coupling of quantum dots. We examine one- and two-exciton dynamics of a three-quantum dot system suggesting a nanometric photonic switch, and numerically obtain a transfer time comparable with the recent experimental results for CuCl quantum dots.
Epitaxial quantum dots (QDs) are widely recognised as one of the best quantum light sources, given their good stability, brightness, quantum efficiency and coherence. To reach such properties, QDs are protected from potentially detrimental surface states by a relatively thick capping layer, typically exceeding 50nm. This prevents the implementation of near-field effects, like plasmonic-based ones, that can dramatically increase the light-matter interaction, since the control of the spontaneous emission dynamics and directionality of the emission can only occur if the emitter is in close proximity (typically tens of nanometers or less) from the metallic structures. In this work, we report the growth and optical characterisation of InAs/GaAs QDs with GaAs capping layer thickness of 10nm, 20nm, and a more standard 95nm. Remarkably, we observe emission linewidths up to 5 times smaller than previously reported, with unperturbed excitonic lifetimes. These results demonstrate that the epitaxial QD's high optical quality can be maintained even when the emitters are at reduced distances from the surface, opening the path for the exploration of near-field light-matter interactions with coherent and stable emitters, suitable for quantum technology applications.