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IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS)

Quantum well intersubband nonlinear optics: beyond perturbation theory

Gilad Almogy, Avigail Yariv

Published Dec 17, 2002• 0 citations
Publisher

Abstract

Summary form only given. Several characteristic features have attracted the current interest in nonlinear optical phenomena of quantum well-intersubband transitions (QWISBTs): the ability to design the quantum well structure and hence control the transition energies and optical dipole matrix elements; the almost equal effective masses of the subbands leading to virtually discrete optical transitions; and the weak localization of electrons in the conduction band leading to large optical dipole matrix elements and hence strong optical interactions.

DOI
10.1109/leos.1994.586950

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Summary form only given. Several characteristic features have attracted the current interest in nonlinear optical phenomena of quantum well-intersubband transitions (QWISBTs): the ability to design the quantum well structure and hence control the transition energies and optical dipole matrix elements; the almost equal effective masses of the subbands leading to virtually discrete optical transitions; and the weak localization of electrons in the conduction band leading to large optical dipole matrix elements and hence strong optical interactions.
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In multiple quantum wells system, a large dipole strength and a narrow band width were observed. This suggests that the intersubband optical transitions in a quantum well may have very large optical nonlinearities. The intersubband transition have potential for device applications in far-infrared laser amplifiers, photodetectors and high-speed electrooptical modulators. In device design, the region of input optical density for linear response is a very important parameter. And the optical saturation is related with tunnelling effects and the intersubband relaxations. So the intersubband nonlinear absorption is very valuble for a fundamental and a practical point of views. Recently, there are some works on this region [1], [2].
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We study the linear and nonlinear optical response of intersubband transitions in a semiconductor quantum well. We describe the coupling of the quantum well structure with the electromagnetic field by using the nonlinear density matrix equations, in the two-subband approximation. We provide proper approximate analytical solutions to these equations that are used for the closed-form determination of the optical susceptibilities χ(1), χ(3), and χ(5). We also explore the dependence of χ(1), χ(3), and χ(5) on the electron sheet density for a specific double GaAs/AlGaAs quantum well.
The nonlinear intersubband optical transitions in a quantum well with an applied electric field are studied with the effects of screening taken into account. Recently, we calculated the linear and nonlinear intersubband optical absorptions in a quantum well with and without an applied electric field.1-3 Interesting Stark effects on the intersubband transitions in the conduction band of an Al- GaAs-GaAs quantum well have been predicted1 and confirmed by experiments.4 The saturation optical intensity in a quantum well has also been reported to be 2 MW/cm2,5 which agrees with our theoretical calculations using the methods in Refs. 2 and 3.
The interband sum frequency generation process due to three-wave interaction of interband and intersubband coupling lights has been investigated in a semiconductor quantum well using the perturbational density matrix approach. The origin of the nonlinear process lies in the second-order susceptibility /spl chi//sub c2-h1//sup (2)/ arising due to the optical transition between the second conduction subband and the first heavy hole state. Both the sign and the magnitude of the second-order susceptibility of the well may be controlled by the carrier density level and the frequency of the intersubband field.