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Lecture notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering

High-Speed Single-Photon Detection Using 2-GHz Sinusoidally Gated InGaAs/InP Avalanche Photodiode

Naoto Namekata, S. Adachi, Shuichiro Inoue

Published Jan 1, 2010• 4 citations
Publisher
DOI
10.1007/978-3-642-11731-2_4

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High-Speed Single-Photon Detection Using 2-GHz Sinusoidally Gated InGaAs/InP Avalanche Photodiode

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We report a telecom-band single-photon detector for high-speed quantum key distribution systems. The single-photon detector is based on a sinusoidally gated InGaAs/InP avalanche photodiode. The gate repetition frequency of the single-photon detector reached 2 GHz. A quantum efficiency of 10.5 % at 1550 nm was obtained with a dark count probability per gate of 6.1×10− 7 and an afterpulsing probability of 3.4 %.

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Afterpulsing-free 80MHz single-photon detection at 1550 nm using an InGaAs/InP avalanche photodiode operated with sinusoidal gating

Naoto Namekata, Shuichiro Inoue

A single-photon detector (SPD) at 1550 nm is essential for quantum key distribution (QKD) based on optical fiber links. A cooled InGaAs/InP avalanche photodiode (APD) is a candidate for the SPD, because it has a high detection efficiency with a low dark count probability. However, the maximum detection speed was very slow (<10 MHz), which is due to the afterpulsing phenomenon. Recently we proposed the sinusoidal gating scheme and demonstrated the high-speed (500-800MHz) single-photon detection with a low afterpulsing probability. In the scheme, the overall afterpulsing probability is somewhat high when the gating frequency is lower than 100MHz. In this paper, we report on the afterpulsing-free (<1%) 80MHz single-photon detection using the sinusoidal gating. The 80MHz mode-locked titanium sapphire laser emits ~90 fs optical pulses at 810 nm. The wavelength of the optical pulses is converted into 1550 nm by the optical parametric oscillator (OPO). The 1550 nm optical pulses (~120 fs) are attenuated to the single-photon level and led to the APD (EPITAXX EPM239BA) cooled to -35 degrees Celsius. The cooled APD was operated with sinusoidal gating.

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Experimental multi-photon-resolving detector using a single avalanche photodiode

Ondřej Haderka, Martin Hamar, Jan Peřina

arXiv:quant-ph/0302154•The European Physical Journal D•Jan 1, 2004•56 citations
A single-photon detector (SPD) at 1550 nm is essential for quantum key distribution (QKD) based on optical fiber links. A cooled InGaAs/InP avalanche photodiode (APD) is a candidate for the SPD, because it has a high detection efficiency with a low dark count probability. However, the maximum detection speed was very slow (<10 MHz), which is due to the afterpulsing phenomenon. Recently we proposed the sinusoidal gating scheme and demonstrated the high-speed (500-800MHz) single-photon detection with a low afterpulsing probability. In the scheme, the overall afterpulsing probability is somewhat high when the gating frequency is lower than 100MHz. In this paper, we report on the afterpulsing-free (<1%) 80MHz single-photon detection using the sinusoidal gating. The 80MHz mode-locked titanium sapphire laser emits ~90 fs optical pulses at 810 nm. The wavelength of the optical pulses is converted into 1550 nm by the optical parametric oscillator (OPO). The 1550 nm optical pulses (~120 fs) are attenuated to the single-photon level and led to the APD (EPITAXX EPM239BA) cooled to -35 degrees Celsius. The cooled APD was operated with sinusoidal gating.