Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

NATO ASI series. Series B : Physics

Stationary Solutions for the Excitonic Optical Stark Effect in Two and Three Dimensional Semiconductors

H. Haug, Claudia Ell, J. F. Müller, K. El Sayed

Published Jan 1, 1989• 2 citations
Publisher
DOI
10.1007/978-1-4684-7278-3_14

Related papers

On the optical stark effect of excitons in semiconductors

I. Balslev, Á. Stáhl

Solid State Communications•Jul 1, 1988•15 citations

Semiconductors in strong laser fields: from polariton to exciton optical Stark effect

Monique Combescot

Physics Reports•Nov 1, 1992•71 citations

The excitonic AC Stark effect in high energy excited semiconductor microcavities

Quochi, Michele Saba, Ciuti +7 more

Quantum Electronics and Laser Science Conference•Jan 1, 2000•0 citations

Transient many-body effects in the semiconductor optical Stark effect: A numerical study

Rolf H. Binder, Stephan W. Koch, Markus Lindberg +2 more

A comprehensive numerical study of the optical Stark effect and associated phenomena in semiconductors is presented. The results are obtained from numerical solutions of the full semiconductor Bloch equations for bulk and quantum-well structures. Coherent oscillations, the optical Stark effect, and adiabatic following, i.e., ultrafast bleaching and recovery of the exciton, are discussed. The relative importance of the different contributions in the semiconductor Bloch equations is identified. Optical-absorption spectra are computed for different exciton dephasing models and a large variety of pump-probe excitation parameters.

Physical review. B, Condensed matter•Mar 15, 1991•79 citations

The optical Stark effect in a transient double resonance in semiconductors

E. Yu. Perlin

Journal of Experimental and Theoretical Physics•Jan 1, 1994•4 citations

Three-level optical Stark effect in semiconductors

Dietmar H. Froehlich, Christian Neumann, Bruno Uebbing +1 more

The three-level optical Stark effect is due to a dynamical coupling of two excited states by an intense laser field. This effect has been observed on the heavy and light hole excitons in multiple quantum wells (MQW) and the dipole allowed 2 P exciton in Cu20. In this contribution new results on the dipole forbidden but quadrupole allowed 1 S exciton in Cu20 are reported. The experimental results are analyzed in terms of a nonlinear susceptibility which takes into account the dynamical coupling between the excited states to all orders.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•May 1, 1990•0 citations
A comprehensive numerical study of the optical Stark effect and associated phenomena in semiconductors is presented. The results are obtained from numerical solutions of the full semiconductor Bloch equations for bulk and quantum-well structures. Coherent oscillations, the optical Stark effect, and adiabatic following, i.e., ultrafast bleaching and recovery of the exciton, are discussed. The relative importance of the different contributions in the semiconductor Bloch equations is identified. Optical-absorption spectra are computed for different exciton dephasing models and a large variety of pump-probe excitation parameters.
The three-level optical Stark effect is due to a dynamical coupling of two excited states by an intense laser field. This effect has been observed on the heavy and light hole excitons in multiple quantum wells (MQW) and the dipole allowed 2 P exciton in Cu20. In this contribution new results on the dipole forbidden but quadrupole allowed 1 S exciton in Cu20 are reported. The experimental results are analyzed in terms of a nonlinear susceptibility which takes into account the dynamical coupling between the excited states to all orders.