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Bulletin of the American Physical Society

Thin film processing of Re/Al$_{2}$O$_{3}$/Re/Ru epitaxial trilayers into superconducting qubits

Jeffrey S. Kline, Fabio Teixeira Ferreira da Silva, David Wisbey, Michael R. Vissers, David P. Pappas

Published Mar 17, 2010• 0 citations
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Bulletin of the American Physical Society•Mar 14, 2006•0 citations
Thin film processing of Re/Al2_{2}2​O3_{3}3​/Re/Ru epitaxial trilayers into superconducting qubits
Thin film growth of epitaxial Re/Al2_{2}2​O3_{3}3​/Re/Ru trilayers for fabrication into Josephson junction based phase qubits
We have characterized the microwave loss of high-Q parallel plate capacitors fabricated from thin-film Al/Al2O3/Re heterostructures on (0001) Al2O3 substrates. The superconductor-insulator-superconductor trilayers were grown in situ in a hybrid deposition system: the epitaxial Re base and polycrystalline Al counterelectrode layers were grown by sputtering, while the epitaxial Al2O3 layer was grown by pulsed laser deposition. Structural analysis indicates a highly crystalline epitaxial Al2O3 layer and sharp interfaces. The measured intrinsic (low-power, low-temperature) quality factor of the resonators is as high as 3 × 104. These results indicate that low-loss grown Al2O3 is an attractive candidate dielectric for high-fidelity superconducting qubit circuits.
Improved Phase Qubits with Re-Al2_{2}2​O3_{3}3​-Al Junctions with Epitaxial Barriers.
To improve the performance of superconducting analog devices at frequencies exceeding the Nb gap frequency, we developed a fabrication process to grow epitaxial NbN/MgO/NbN trilayers. To evaluate the RF performance of the trilayers, we fabricated Josephson junctions with an epitaxial NbN/MgO/NbN microstrip resonator. A Josephson junction was placed in the center of the resonator and it was used as both an oscillator and a detector. The width and length of the microstrip resonator were 10 and 1000 /spl mu/m, respectively. Current steps of up to 1.9 mV resulting from coupling with the resonator were observed in the I-V characteristics. We found that the height of the current steps depended on the loss of the resonator. By assuming that the sum of the dielectric loss and the radiation loss is much smaller than the conductor loss, we estimated the surface resistance of the epitaxial NbN thin films. The surface resistance of the epitaxial NbN films was estimated to be approximately 2.6-88 m/spl Omega/ at 0.1-1.1 THz.
Epitaxial growth of Mo/Al2_{2}2​O3_{3}3​/Mo trilayers for Josephson junction qubits