The integration of photonic components into surface ion traps provides a scalable approach for trapped-ion quantum computing, sensing, and metrology, enabling compact systems with enhanced stability and precision. However, the introduction of optical apertures in the trap electrodes can distort the trapping electric field. This can lead to excess micromotion and ion displacement, which degrade the performance of quantum logic operations and optical clocks. In this work, we systematically investigate the electric field distortion in a surface ion trap with integrated waveguides and grating couplers that require apertures in the surface electrode using finite element method simulations. We analyze methods to reduce these distortions by exploiting symmetries and transparent conductive oxide materials.
Quantum magnetometry represents a fundamental component of quantum metrology, where trapped-ion systems have achieved pT/Hz sensitivity in single-ion radio-frequency magnetic field measurements via dressed states based dynamical decoupling. Here we propose a scalable trapped-ion magnetometer utilizing the mixed dynamical decoupling method, combining dressed states with periodic sequences to suppress decoherence and spatial magnetic field inhomogeneity. With numerical simulations for a 104 ion system with realistic experimental parameters, we demonstrate that a sensitivity of 13 fT/Hz for the radio-frequency field could be reached. Such a sensitivity could be obtained via robust resilience to magnetic field drift noise and inhomogeneity, where coherence time could be extended to the order of several minutes on average. This method enables scalable trapped-ion magnetometry, demonstrating its potential as a robust and practical solution for advancing quantum sensing applications.
Abstract Ion traps are used for a wide range of applications from metrology to quantum simulations and quantum information processing. Microfabricated chip-based 3D ion traps are scalable to store many ions for the realization of a large number of qubits, provide deep trapping potentials compared to surface traps, and very good shielding from external electric fields. In this work, we give an overview of our recent developments on chip-based 3D ion traps. Different types of chip materials, the integration of electronic filter components on-chip and compact electrical connections in vacuum are discussed. Further, based on finite element method simulations, we discuss how integrating micro-optics in 3D ion traps is possible without disturbing the trapped ions.