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arXiv:2609.32205

Inverse-Designed Nanobeam Cavities for High-Cooperativity Spin-Photon Interfaces in Silicon

Nail Letty, Md Sakibul Islam, Wayesh Qarony

quant-phSubmitted Sep 26, 2026• Announced Sep 29, 2026
arXivHTMLPDF

Abstract

Telecom-band spin defects in silicon offer a compelling platform for integrated quantum networks by combining scalable silicon photonics with spin-based quantum memories and multiqubit registers. The T center and recently demonstrated Al1 center are particularly promising, but their limited coherent zero-phonon emission requires strong cavity enhancement for efficient spin-photon interfaces. Here, we inverse-design silicon nanobeam cavities for both centers using a unified adjoint-optimization framework targeting Purcell enhancement, resonance alignment, and photon extraction. For each emitter, symmetric cavities maximize Purcell enhancement, while asymmetric cavities provide directional coupling to an integrated waveguide. Three-dimensional finite-difference time-domain simulations yield loaded quality factors up to 3.25 x 10^6, Purcell factors up to 1.43 x 10^5, and cooperativities of approximately 280-5000, corresponding to cavity-coupled emission fractions exceeding 99.6%. The asymmetric cavities direct approximately 90% of emitted power into a single on-chip waveguide while maintaining cooperativity above 280. Under nanometer-scale fabrication perturbations, all four designs remain within the high-cooperativity regime, and high cooperativity persists when the cavity quality factor is constrained to a realistic absorption-limited value of 10^5. This unified, fabrication-compatible framework establishes a scalable cavity-design route for silicon telecom spin-photon interfaces and, to our knowledge, the first cavity designs for the Al1 center.

Comments
36 pages, 9 figures

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Telecom-band spin defects in silicon offer a compelling platform for integrated quantum networks by combining scalable silicon photonics with spin-based quantum memories and multiqubit registers. The T center and recently demonstrated Al1 center are particularly promising, but their limited coherent zero-phonon emission requires strong cavity enhancement for efficient spin-photon interfaces. Here, we inverse-design silicon nanobeam cavities for both centers using a unified adjoint-optimization framework targeting Purcell enhancement, resonance alignment, and photon extraction. For each emitter, symmetric cavities maximize Purcell enhancement, while asymmetric cavities provide directional coupling to an integrated waveguide. Three-dimensional finite-difference time-domain simulations yield loaded quality factors up to 3.25 x 10^6, Purcell factors up to 1.43 x 10^5, and cooperativities of approximately 280-5000, corresponding to cavity-coupled emission fractions exceeding 99.6%. The asymmetric cavities direct approximately 90% of emitted power into a single on-chip waveguide while maintaining cooperativity above 280. Under nanometer-scale fabrication perturbations, all four designs remain within the high-cooperativity regime, and high cooperativity persists when the cavity quality factor is constrained to a realistic absorption-limited value of 10^5. This unified, fabrication-compatible framework establishes a scalable cavity-design route for silicon telecom spin-photon interfaces and, to our knowledge, the first cavity designs for the Al1 center.
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Quantum networking is a crucial technology towards constructing large-scale distributed quantum systems. The structure of photonic link and distributed network nodes allows high-speed and high-fidelity interconnect, enabling various applications such as distributed quantum computing and sensing, as well as secure quantum communications. Optically interfaced solid-sate spins are promising candidates for building a quantum network due to their active spin-photon interfaces, compatibility, and scalability for device integration. Especially for defect spins in silicon, the platform benefits from mature silicon photonic industry, and can access to the integration techniques developed over the past decades. T center in silicon particularly holds great expectations because of the telecom-O band optical interface, ground state doublet spin manifold, and long-lived nuclear spin coherence. Their telecom spin-photon interface provides a direct link between stationary quantum memory and flying qubits that are compatible with the existing telecommunication fiber network infrastructure. This work focuses on investigating cavity quantum electrodynamics (cQED) for cavity-coupled single T centers, its applications in quantum optical control of T center optical properties, and in realizing single-shot spin state readout. The cavity enhanced light-matter interaction mitigates the caveats of T center, such as long radiative lifetime, low Debye-Waller factor, and lack of polarization selection rule for the optical transitions. In this work, by integrating single T centers with a low-loss, small mode volume silicon photonic cavity, we have achieved the Purcell enhancement for boosting the T center fluorescence rate with a factor of 6.89. We build up the theoretical framework based on the Jaynes-Cummings model and Lindblad master equation to explain experimental observations and reveal cQED parameters. The further study on the electronic spin state readout is carried out as the fast, high-fidelity single-shot readout is critical for quantum information processing. Two methods are proposed based on realistic cQED parameters: resonant fluorescence readout in the low-cooperativity regime and spin-dependent cavity-reflection readout for intermediate- and high-cooperativity regimes. Both approaches demonstrate feasibility of high-fidelity (F > 0.95) readout, particularly the reflection readout allows F > 0.99 within a short readout time of 50 μs. This work demonstrates a promising telecom spin-photon interface with high-fidelity readout based on cavity-coupled single T centers in silicon, which are promising candidates for building future large-scale quantum networks.
Solid-state spin-based quantum systems have emerged as popular platforms for quantum networking applications due to their optical interfaces, their long-lived quantum memories, and their natural compatibility with semiconductor manufacturing. Photonic crystal cavities are often used to enhance radiative emission; however, fabrication of the necessary subwavelength cavities is typically limited to small batch electron beam lithography. In this work, we demonstrate high quality factor, small mode volume nanobeam cavities fabricated on a scalable silicon photonic foundry platform. The foundry fabricated cavities are then interfaced with single erbium ions through backend deposition of TiO 2 thin films lightly doped with erbium. Single ion lifetime measurements indicate Purcell enhancement up to about 500, thereby demonstrating a route toward manufacturable deterministic single photon sources in the telecom C-band.
Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate antibunched single photons, practical applications require tailoring of their emission through quantum cavity effects. In this work, we perform cavity quantum electrodynamics experiments with ensembles of artificial atoms embedded in silicon-on-insulator microresonators. The emitters under study, known as W color centers, are silicon tri-interstitial defects created upon self-ion implantation and thermal annealing. The resonators consist of circular Bragg grating cavities, designed for moderate Purcell enhancement ( F p = 12.5) and efficient luminescence extraction (η coll = 40% for a numerical aperture of 0.26) for W centers located at the mode antinode. When the resonant frequency mode of the cavity is tuned with the zero-phonon transition of the emitters at 1218 nm, we observe a 20-fold enhancement of the zero-phonon line intensity, together with a 2-fold decrease of the total relaxation time in time-resolved photoluminescence experiments. Based on finite-difference time-domain simulations, we propose a detailed theoretical analysis of Purcell enhancement for an ensemble of W centers, considering the overlap between the emitters and the resonant cavity mode. We obtain a good agreement with our experimental results assuming a quantum efficiency of 65 ± 10% for the emitters in bulk silicon. Therefore, W centers open promising perspectives for the development of on-demand sources of single photons by harnessing cavity quantum electrodynamics in silicon photonic chips.
Spin-photon interfaces, realized by coupling optically active spin systems to photonic cavities, are essential for quantum networking and quantum information processing. Implementing such an interface for polarization-encoded photons requires a cavity that supports arbitrary polarization, provides efficient optical access through its far-field mode, and maintains sufficiently high quality factors to enable high cooperativity with the system's optical transitions. However, inherent trade-offs between the Q-factor and far-field emission mode make the simultaneous optimization of these parameters toward the realization of spin-photon interfaces challenging. In this work, we implement a gradient-based inverse-design framework using guided-mode expansion with automatic differentiation to obtain the geometrical features of a circular ring cavity that supports arbitrary polarization while simultaneously optimizing the cavity quality factor and far-field mode profile. The resulting optimized non-periodic cavity achieves a quality factor of approximately 9,0009,0009,000, about an order-of-magnitude higher than that of a periodic ("bullseye") cavity while preserving a Gaussian-like far-field emission pattern. Furthermore, by varying the cavity geometry within a ±6\pm 6±6 nm fabrication tolerance, we demonstrate the robustness of the design against fabrication errors and identify the innermost ring width and central disk radius as the parameters with the greatest impact on the quality factor and far-field mode. These results establish guided mode expansion-based inverse design as a powerful and computationally efficient approach for developing high-cooperativity spin-photon interfaces for quantum photonic applications.