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arXiv:2609.11732

Hilbert-space selected switch of helical edges in an artificial quantum Hall insulator

Naijie Ren, Zhiren Xiong, Kaining Yang, Yanran Shi, Hanwen Wang, Kenji Watanabe, Takashi Taniguchi, Neng Wan, Xiaojun Jia, Jianpeng Liu, Zheng Vitto Han, Yaning Wang

cond-mat.mes-hallquant-phSubmitted Sep 10, 2026• Announced Sep 11, 2026
arXivHTMLPDF

Abstract

Quantum Hall effects (QHE) host one-dimensional topologically-protected edge channels, which can serve as an essential ingredient in exotic quantum electronic systems. Yet the manual reconstruction of Landau-level topology, by electrostatic confinement or symmetry breaking, remains experimentally challenging. Here, we show that interfacial charge transfer in between CrOCl and large-angle twisted bilayer graphene offsets the two otherwise decoupled Dirac Landau-level ladders in each graphene layer, creating a new sequence of composite filling configurations. At charge neutrality, the composited $(+2,-2)$ state involves only the zeroth Landau levels and becomes fully insulating, with longitudinal resistance reaching the G$Ω$ regime. By contrast, higher composite zero-filling quantum Hall states, including $(+6,-6)$ and $(+10,-10)$, retain counter-propagating helical edge channels and exhibit pronounced non-local transport, reaching up to $50\%$ of the local response. We attribute such switching-behavior to the Landau-spinor Hilbert space -- as the filling is reduced from $(+6,-6)$ to $(+2,-2)$, the orthogonal $N=\pm1$ orbital components are removed, eliminating the edge-compatible channel and gapping both bulk and boundary transport. The interaction nature of the observed gapped sates was further examined both experimentally and theoretically. Our results suggest that charge transfer provides a direct route to engineer artificial quantum Hall insulators, opening possibilities for wavefunction-selective control of helical edge modes.

Comments
12 pages, 4 figures

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Quantum Hall effects (QHE) host one-dimensional topologically-protected edge channels, which can serve as an essential ingredient in exotic quantum electronic systems. Yet the manual reconstruction of Landau-level topology, by electrostatic confinement or symmetry breaking, remains experimentally challenging. Here, we show that interfacial charge transfer in between CrOCl and large-angle twisted bilayer graphene offsets the two otherwise decoupled Dirac Landau-level ladders in each graphene layer, creating a new sequence of composite filling configurations. At charge neutrality, the composited (+2,−2)(+2,-2)(+2,−2) state involves only the zeroth Landau levels and becomes fully insulating, with longitudinal resistance reaching the GΩΩΩ regime. By contrast, higher composite zero-filling quantum Hall states, including (+6,−6)(+6,-6)(+6,−6) and (+10,−10)(+10,-10)(+10,−10), retain counter-propagating helical edge channels and exhibit pronounced non-local transport, reaching up to 50%50\%50% of the local response. We attribute such switching-behavior to the Landau-spinor Hilbert space -- as the filling is reduced from (+6,−6)(+6,-6)(+6,−6) to (+2,−2)(+2,-2)(+2,−2), the orthogonal N=±1N=\pm1N=±1 orbital components are removed, eliminating the edge-compatible channel and gapping both bulk and boundary transport. The interaction nature of the observed gapped sates was further examined both experimentally and theoretically. Our results suggest that charge transfer provides a direct route to engineer artificial quantum Hall insulators, opening possibilities for wavefunction-selective control of helical edge modes.
Quantum Hall systems have a one-body energy spectrum consisting of dispersion-less Landau levels. Electron-electron interactions thus dominate in partially filled Landau levels, which exhibit a myriad of strongly correlated phases such as quantum hall ferromagnets and fractional quantum Hall phases. We study two examples of these phenomena. In the first project, we explore the ground state of a system with an interface between two semi-infinite regions with fillings ν= 4 and ν= 3 respectively. The width of the interface can be controlled by varying the background potential, which provides an additional tuning parameter. For a certain range of interaction strengths, the ν= 4 bulk is unpolarized whereas the ν= 3 bulk is fully polarized. In the parameter space spanned by the interaction strength and width of the interface, we find two phases at the interface. Phase A has spin as a good quantum number, and the long-wavelength spin edge excitations are gapped. In phase B, spin rotation symmetry is spontaneously broken at the mean-field level. Using symmetry arguments we find the effective theory near the interface of phase B. This effective theory is known to have gapless long-wavelength spin excitations. In the second project, we study the ground state of a tunnel-decoupled double-layer graphene system when both layers are undoped. We find a simple Hamiltonian in the continuum limit from symmetries of the system. Using the Hartree-Fock approximation we find a state with inter-layer coherence with broken layer U(1) symmetry. This phase becomes magnetized in presence of a non-zero Zeeman field. A first-order phase transition can be driven from the ferromagnetic phase to the magnetized inter-layer coherent phase by increasing the Zeeman field. We predict the number of gapless modes in the bulk.
We consider a fractional quantum Hall bilayer system with an interface between quantum Hall states of filling fractions (ν_{top},ν_{bottom})=(1,1) and (1/3,2), motivated by a recent approach to engineering artificial edges [Y. Ronen et al., Nat. Phys. 14, 411 (2018)NPAHAX1745-247310.1038/s41567-017-0035-2]. We show that random tunneling and strong repulsive interactions within one of the layers will drive the system to a stable fixed point with two counterpropagating charge modes which have attractive interactions. As a result, slowly decaying correlations on the edge become predominantly superconducting. We discuss the resulting observable effects and derive general requirements for electron attraction in Abelian quantum Hall states. The broader interest in fractional quantum Hall edge with quasi-long-range superconducting order lies in the prospects of hosting exotic anyonic boundary excitations, which may serve as a platform for topological quantum computation.
Topological insulators lie outside the standard Landau paradigm: Instead of being characterized by local order parameters and spontaneous symmetry breaking, their defining properties are encoded in the global structure of their quantum states and manifested as robust boundary states. Crystalline higher-order topological insulators can extend this principle by hosting localized corner modes in two and higher dimensions. Although these boundary modes can be detected spectroscopically through the local density of states, determining the underlying bulk topology, for example through nested Wilson loops, remains an outstanding experimental challenge. Here we use up to 728 qubits in a superconducting analogue-digital quantum simulator to realize and probe a hierarchy of one-, two-, and three-dimensional topological insulators governed by effective tight-binding Hamiltonians. By reconstructing complex propagators from real-space measurements, we obtain complementary boundary and bulk characterizations: local densities of states reveal localized boundary modes, whereas experimentally reconstructed band projectors yield bulk topological invariants, culminating in a three-dimensional octupole moment extracted through third nested Wilson loops. These results establish a route to realizing, characterizing, and manipulating topologically protected states in programmable three-dimensional quantum matter.
Single-layer and Bilayer of graphene are new classes of two-dimensional electron systems with unconventional band structures and valley degrees of freedom. The ground states and excitations in the integer and fractional quantum Hall regimes are investigated on torus and spherical geometries with the use of the density matrix renormalization group (DMRG) method. At nonzero Landau level indices, the ground states at effective filling factors 1, 1/3, 2/3 and 2/5 are valley polarized both in single-layer and bilayer graphenes. We examine the elementary charge excitations which could couple with the valley degrees of freedom (so called valley skyrmions). The excitation gaps are calculated and extrapolated to the thermodynamic limit. The largest excitation gap at effective filling 1/3 is obtained in bilayer graphene, which is a good candidate for experimental observation of fractional quantum Hall effect.
Stacked two-dimensional materials provide a promising platform for electrically controlling topological electronic states. However, tunneling between layers hybridizes their bands and removes the crossings needed to change topology. We show that this does not always have to be the case. Band crossings and associated Weyl points are topologically enforced in Hofstadter bilayers whose layers experience different magnetic fluxes. When resonant magnetic Bloch multiplets carry unequal Chern numbers, their projected tunneling is topologically obstructed and must vanish at isolated momenta. Sweeping the layer bias through these zeros creates synthetic Weyl monopoles in momentum-bias space that transfer the Chern mismatch. We demonstrate two consequences: a direct transition between insulating Chern phases and a reentrant compensated metal in which Lifshitz transitions bound the metallic window while internal Weyl events reconstruct the band topology. Consequently, the fixed-filling Hall response remains continuous and nonquantized even as integer Chern number is transferred between bands. Berry-flux, TKNN, and interface calculations independently verify the mechanism and its multichannel chiral signature. We outline realizations in Moire and anomalous-Hall heterostructures, establishing flux mismatch as an experimentally accessible route to electrically programmable Chern phases and chiral transport.
A static deformation of graphene can act on its Dirac electrons as a valley-odd magnetic field. In sublattice-gapped graphene this field makes the two valleys add in the parity-odd response rather than cancel. We derive the equilibrium thermodynamics of this effect and separate it from the finite-frequency transport response. At fixed electrochemical potential, reversing the pseudomagnetic field removes every nonzero pseudo-Landau level in the continuum theory. The remaining grand-potential difference is fixed by the spectrally asymmetric zeroth level. The static charge response is a thermally broadened plateau confined to the gap and has no metallic m/∣μ∣m/|μ|m/∣μ∣ tail. Near a band edge, pseudofield reversal transfers Bln⁡2\mathrm{B}\ln2Bln2 of entropy per unsplit zero-mode state in the low-temperature window. The fixed-μμμ heat capacity has two side lobes per edge and a universal peak 0.439229 DBkB0.439229\,D_B k_{\mathrm B}0.439229DB​kB​. We then formulate a definite constant-gate-voltage circuit and show that the measured sheet heat capacity depends on the electrical boundary condition. The full massive-Dirac density of states and an exact finite-field pseudo-Landau-level calculation give the same gate crossover in their common limit. At fixed carrier number, the low-temperature edge value is −2(ln⁡2)2DBkB-2(\ln2)^2 D_B k_{\mathrm B}−2(ln2)2DB​kB​, rather than a node. A finite geometric capacitance gives a continuous and experimentally tunable interpolation. Finally, we give a trace-free triaxial strain geometry, a disorder--interaction window, and realistic calorimetric and quantum-capacitance scales. The field-reversal protocol isolates an equilibrium electromechanical anomaly without a real magnetic field.