Towards Stirling cooler operable single-photon sources based on low-noise GaAs quantum dots
Maximilian Aigner, Jana Schlücking, Eva Schöll, Christian Weidinger, Gabriel Undeutsch, Ievgen Brytavskyi, Thomas Oberleitner, Tobias Maria Krieger, Ailton Jose Garcia Junior, Melina Peter, Thomas K. Bracht, Michał Gawełczyk, Saimon Filipe Covre da Silva, Santanu Manna, Yusuf Karli, Gregor Weihs, Doris E. Reiter, Armando Rastelli
quant-phcond-mat.mes-hallSubmitted Aug 25, 2026• Announced Aug 26, 2026• 0 citations• Revised Sep 14, 2026 (v2)
For photonic quantum technology applications, sources capable of emitting photons with indistinguishability close to unity are essential. Ideally, these sources should not require demanding cooling systems. Here, we present temperature-dependent two-photon-interference measurements on photons produced by the radiative decay of the negative trion in a low-noise GaAs quantum dot, which are in quantitative agreement with theoretical calculations accounting for carrier-phonon interactions and coupling to excited states. While at at the lowest explored temperatures the emission linewidth reaches values only 6(2) % above the Fourier limit and the indistinguishability I between subsequently emitted photons reaches 0.966(6), the latter drops to 0.05(4) at 55 K. We show that this loss can be explained with the coupling with energetically close excited trion states and suggest that the photon indistinguishability at elevated temperatures can be increased by employing Purcell enhancement of the emission rate or by increasing the energy separation of the excited states. Using cavity-enhanced emission, we experimentally verify the first route and demonstrate an improvement in photon indistinguishability from 0.314(25) to 0.80(3) at 32 K, which - to our knowledge - is the highest reported value at such temperature.
For photonic quantum technology applications, sources capable of emitting photons with indistinguishability close to unity are essential. Ideally, these sources should not require demanding cooling systems. Here, we present temperature-dependent two-photon-interference measurements on photons produced by the radiative decay of the negative trion in a low-noise GaAs quantum dot, which are in quantitative agreement with theoretical calculations accounting for carrier-phonon interactions and coupling to excited states. While at at the lowest explored temperatures the emission linewidth reaches values only 6(2) % above the Fourier limit and the indistinguishability I between subsequently emitted photons reaches 0.966(6), the latter drops to 0.05(4) at 55 K. We show that this loss can be explained with the coupling with energetically close excited trion states and suggest that the photon indistinguishability at elevated temperatures can be increased by employing Purcell enhancement of the emission rate or by increasing the energy separation of the excited states. Using cavity-enhanced emission, we experimentally verify the first route and demonstrate an improvement in photon indistinguishability from 0.314(25) to 0.80(3) at 32 K, which - to our knowledge - is the highest reported value at such temperature.
Abstract Solid-state emitters such as epitaxial quantum dots have emerged as a leading platform for efficient, on-demand sources of indistinguishable photons, a key resource for many optical quantum technologies. To maximise performance, these sources normally operate at liquid helium temperatures ( ∼ 4 K ), introducing significant size, weight and power requirements that can be impractical for proposed applications. Here we experimentally resolve the two distinct temperature-dependent phonon interactions that degrade indistinguishability, allowing us to demonstrate that coupling to a photonic nanocavity can greatly improve photon coherence at elevated temperatures up to 30 K that are compatible with compact cryocoolers. We derive a polaron model that fully captures the temperature-dependent influence of phonons observed in our experiments, providing predictive power to further increase the indistinguishability and operating temperature of future devices through optimised cavity parameters.
We investigate the indistinguishability of single photons generated from strain-free GaAs/AlGaAs quantum dots using pulsed resonance fluorescence techniques. In pulsed two-photon interference measurements we observe a single photon indistinguishability with a raw visibility of 95%. This can be traced back to the short intrinsic lifetime of excitons and trions confined in the GaAs quantum dots and demonstrates that for this material system the generation of single photons is possible with near-unity indistinguishability even without Purcell enhancement.
In the fields of quantum communications and quantum computing, the transmission of information using single photons guarantees the security of the communication and enables calculations that would be impossible with our "classical" computers. One of the key elements in implementing such protocols is the photon source. It must emit, on demand, one and only one photon with specific quantum properties.The aim of this project is to characterise a source of single and indistinguishable photons, designed and manufactured at CEA-Grenoble, and consisting of an indium arsenide (InAs) semiconductor quantum dot integrated into a gallium arsenide (GaAs) nanocavity. With its low quality factor, the nanocavity enables photons to be extracted efficiently over a wide range of wavelengths (30nm). In addition, thanks to its small mode volume, the spontaneous emission of quantum dots within it can be accelerated by Purcell effect (Purcell factor up to 6).In this manuscript, we first detail the implementation and the optimisation of the experimental setups used to characterise the photons emitted by our sample : microphotoluminescence, radiative lifetime measurement, Hanbury-Brown and Twiss (HBT) experiment and Hong-Ou-Mandel (HOM) experiment. Then, we present the experimental results obtained for photons emitted by two distinct quantum dots : One containing neutral exciton states, and the second, containing a charged exciton state. In order to photo-create these exciton states in the quantum dots, two pulsed optical excitation schemes were implemented: the two-photon resonant excitation of the neutral biexciton, and the phonon-assisted quasi-resonant excitation of the neutral and charged excitons. We present the measurement of the three figures of merit of a single photon source for these two quantum dots : the brightness, the single-photon purity and the indistinguishability of the emitted photons. In a second phase, we will focus on the charged exciton state and measure the profile of its emission line and its autocorrelation function under continuous resonant excitation. These results, achieved within the nano-photonics group of the University of Basel, constitute the first demonstration of continuous excitation on these nanostructures, which is a good surprise given their small size.Finally, we will look at the effects of the application of mechanical stress on the energy separation of the two neutral exciton states, known as the "fine structure splitting" (FSS). During the radiative cascade of the neutral biexciton state, the two photons emitted are entangled in polarisation, and the fidelity of the entanglement depends in particular on the FSS. Here, we will consider a second sample, where the InAs quantum dots are embedded in a GaAs photonic nanowire. By bending the nanowire, mechanical stresses are applied to the quantum dots, which will modify the energy of the exciton states. We will present an experimental study aimed at observing a possible effect on the fine structure splitting.In conclusion, we have developed and optimised various experimental setups for characterising photon sources for applications in the fields of quantum communications and quantum computing. For a first version of these photonic nanostructures, the brightness, the single-photon purity and the indistinguishability of the photons emitted by our quantum dots integrated into nanocavities are very encouraging for the future. The next objectives are to improve the nanocavities and to characterise the decoherence phenomena and the mechanical coupling between the quantum dots and these nanostructures.
The generation of indistinguishable single photons is a fundamental requirement for photonic quantum technologies. However, spectral fluctuations, often induced by charge noise in epitaxial quantum dots (QDs), lead to exciton dephasing, thereby limiting their practical usage in quantum applications. We present a straightforward approach to mitigate charge noise-induced decoherence in droplet-etched GaAs QDs embedded in an n-i-p diode structure and integrated deterministically into an electrically contacted circular Bragg grating resonator for emission enhancement. The quantum device allows for the stabilization of the charge environment by applying an external electrical field while producing a photon extraction efficiency of (37±2)%. Hong-Ou-Mandel two-photon interference measurements reveal a strong dependence of the exciton dephasing time and interference visibility on the applied bias, in excellent agreement with our theoretical predictions. Notably, the reduction in visibility from a maximum, charge stabilized corrected value of 97% at the optimum bias point follows an inverse square dependence (∝1/I^{2}) with increasing diode current (I) in the forward direction. Under a quasi-resonant excitation scheme, we achieve a maximum exciton dephasing time (T_{2}^{*}) of approximately (6.8±0.5) ns, reaching nearly the Fourier limit (T_{2}=2T_{1}) without the need for complex echo schemes like Ramsey or Carr-Purcell-Meiboom-Gill sequences. These findings are consistent with theoretical predictions from rate equation modeling and quantum optical analysis, as well as voltage-dependent linewidth measurements, demonstrating optimized electrical control of exciton dephasing.
Scalable optical quantum technologies require interference between large numbers of indistinguishable single-photons emitted by independent sources. Semiconductor quantum dots are known to be excellent on-demand sources of single-photons. They show record efficiency when inserted into optical cavities to control their spontaneous emission and generate trains of near identical photons over microsecond timescales. However, generating perfectly identical photons from distant cavity-based sources has remained a long-standing challenge. It requires precise matching of the emission wavelengths and emission dynamics, while simultaneously minimizing spectral noise across all time scales for distant emitters in uncorrelated environments. Here, we report on the nanofabrication of a large number of quantum dot-cavity sources with ultra-low spectral noise and wavelength dispersion. The high source efficiency and the use of two tuning mechanisms enable precise optimization of the spectral overlap between distant sources. With this approach, we demonstrate a two-photon indistinguishability of 88±1 % between photons emitted from two distant sources. Remarkably, this value reaches the upper bound set by the intrinsic indistinguishability of photons emitted successively by each source. These results represent a key milestone for scaling photon-based quantum technologies.
We report a joint experimental and theoretical study of the interference properties of a single-photon source based on a In(Ga)As quantum dot embedded in a quasiplanar GaAs microcavity. Using resonant laser excitation with a pulse separation of 2 ns, we find near-perfect interference of the emitted photons, and a corresponding indistinguishability of $\mathcal{I}=(99.6{\phantom{\rule{0.16em}{0ex}}}_{\ensuremath{-}\phantom{\rule{0.16em}{0ex}}1.4}^{+\phantom{\rule{0.16em}{0ex}}0.4})%$. For larger pulse separations, quasiresonant excitation conditions, increasing pump power, or with increasing temperature, the interference contrast is progressively and notably reduced. We present a systematic study of the relevant dephasing mechanisms and explain our results in the framework of a microscopic model of our system. For strictly resonant excitation, we show that photon indistinguishability is independent of pump power, but strongly influenced by virtual phonon-assisted processes which are not evident in excitonic Rabi oscillations.