Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:2606.26266

Complex frequency-dependent quadrature squeezing in semiconductor lasers

Daniele Nello, Giuseppe Patera, Lorenzo Columbo

quant-phcond-mat.mes-hallphysics.opticsSubmitted Jun 24, 2026• Announced Jun 26, 2026• 0 citations• Revised Oct 8, 2026 (v2)
v1 · Jun 24, 2026v2 · Oct 8, 2026
arXivHTMLPDF

Abstract

We present a comprehensive study of quadrature squeezing in a quantum well laser based on a fully quantum Langevin approach. We compute the frequency-resolved squeezing map of the laser field and identify optimal squeezing curves, revealing, for the first time to our knowledge, both frequency-dependent squeezing and complex or hidden squeezing in a semiconductor laser. We further analyse the role of the linewidth enhancement factor (alpha-factor) in the emergence of these features. Our results establish semiconductor lasers as a platform for the generation of non-classical light and open new perspectives for their application in quantum communication and sensing.

Comments
11 pages, 5 figures

Related papers

Squeezed Light Generation in Semiconductors

A. M. Fox, J.J. Baumberg, Maurizio Dabbicco +2 more

The signal to noise ratio of optical systems is ultimately limited by the shot noise due to the Poissonian statistics of the light field. In recent years there has been a considerable effort to find ways to overcome this limitation by generating non-classical light with sub-shot noise statistics. Several groups have demonstrated non-classical light generation in diode lasers or light emitting diodes, and the amplitude fluctuations have been reduced substantially below the shot noise level [1,2]. However, for phase-sensitive measurements it is necessary to generate the more general quadrature squeezed states. Such quadrature squeezed light can be generated either by second-order or third-order nonlinear processes provided the nonlinear material has very low losses at the optical wavelength. To date, the successful generation schemes for quadrature squeezed light have been restricted to atomic vapours, optical fibres, or second-order nonlinear crystals [3]. The possibility of using the large χ(3) nonlinearities of semiconductors at frequencies below the band gap where the optical absorption is small has been discussed in the literature, but so far there have been no successful experiments [4-6]. In this paper we report measurements on GaAs/Al0.3Ga0.7As multiple quantum well waveguides and bulk ZnS in the wavelength range 750 - 890nm. Although we measure much larger nonlinearities in the quantum wells, the strong two-photon absorption is detrimental for squeezed light generation. However, in the ZnS where the laser frequency is below the two- photon absorption edge, we have succeeded in generating quadrature squeezed light in a semiconductor for the first time. On the basis of our results, we would expect that squeezed light could be generated in many other semiconductor systems provided the photon energy is less than half the band-gap energy.

Quantum Optoelectronics•Jan 1, 1995•13 citations

Semiconductor Laser with Dispersive Loss: Quantum Noises and Amplitude squeezing

Rashit F. Nabiev

In the recent paper 1 semiclassical treatment of semiconductor laser (SL) with dispersive loss element (DLE) inside the cavity was presented. In SL with frequency dependent photon life time τ p ( τ p −1=τp0−1+2Cφ, φ is the slowly varying phase of an electromagnetic field) phase and amplitude noises were shown to be decreased (1 + Cα)2 / (l +α2) and (1 + Cα)2 / (1 + C2) (α is the linewidth enhancement factor) times, respectively, comparing to the conventional SL (C=0). At the same time, he low frequency portion of current modulation response is unchanged. Possible values of parameter C 1 can be ~10 and some dozens in the case of atomic absorption cell and the weak coupling of SL to an external high-finesse Fabry-Perot etalon, respectively.

Quantum Optoelectronics•Jan 1, 1993•1 citation

Photon Number Squeezed States in Semiconductor Lasers

Y. Yamamoto, Susumu Machida, Wayne H. Richardson

Electromagnetic fields, with the noise on one quadrature component reduced to below the quantum mechanical zero-point fluctuation level and the noise on the other quadrature component enhanced to above it, are currently of great interest in quantum optics because of their potential applications to various precision measurements. Such squeezed states of light are usually produced by imposing nonlinear unitary evolution on coherent (or vacuum) states. On the other hand, squeezed states with reduced photon number noise and enhanced phase noise are generated directly by a constant current-driven semiconductor laser. This is the simplest scheme for the generation of nonclassical light, and so far it has yielded the largest quantum noise reduction. The mutual coupling between a lasing junction and an external electrical circuit provides opportunities for exploring the macroscopic and microscopic quantum effects in open systems.

Science•Mar 6, 1992•65 citations

Quantum noise reduction in semiconductor lasers using dispersive optical feedback

John Edward Kitching

This thesis describes the phase and amplitude noise properties of semiconductor lasers subjected to weak, dispersive optical feedback. In the first half, experiments demonstrating reductions in the laser frequency noise power spectrum and spectral linewidth by several orders of magnitude are presented. Weak optical feedback is applied to the laser by an external cavity containing an atomic vapor. The presence of the vapor adds to the dispersion of the cavity and simultaneously locks the laser to a fixed frequency reference. The role of 1/f frequency noise in limiting the effectiveness of this linewidth reduction technique is investigated and 1/f noise is found to be the dominant contribution to the linewidth under strong optical feedback conditions. An electronic feedback scheme utilizing FM sideband locking is then implemented alongside the optical feedback, and an additional reduction in the low frequency 1/f frequency noise power spectrum by over two orders of magnitude is obtained. With both systems operating simultaneously, the spectral linewidth is narrowed from its free-running value of about 20 MHz to 1.4 kHz. Excellent absolute frequency stability is also achieved. In the second half, the effects of optical feedback on the quantum mechanical amplitude noise properties of the laser are examined. A fully quantum mechanical theory of amplitude and phase noise for a semiconductor laser with weak optical feedback is developed, and the nature and limits of the noise reduction using this technique are established. Particular attention is given to the feedback-induced enhancement of the amplitude squeezing which can be obtained in a pump-suppressed semiconductor laser: an improvement in the squeezing by 3 dB is predicted under moderate pumping. Somewhat larger noise reductions are expected when the laser is operating closer to threshold. Measurements performed on a laser biased close to threshold are then described and a reduction in the low frequency amplitude noise power spectrum by 7 dB is obtained. An experimental investigation of the effects of optical feedback on the amplitude squeezing in a semiconductor laser is then discussed. The low frequency squeezing in a room temperature device is increased from 3% below the standard quantum limit (SQL) under free-running conditions to 19% below the SQL with optimal feedback. The experimental results are found to agree poorly with the single-mode model and a multi-mode model including the effects of asymmetrical cross-mode non-linear gain is developed to explain the discrepancy. Finally, further experimental investigation into the generation of amplitude squeezed light is presented using a commercial laser with no intentional external modifications. Squeezing as large as 29% below the SQL is measured using a balanced homodyne detector with the laser operating near room temperature, corresponding to 41% below the SQL at the output facet of the laser.

•Jan 1, 1995•1 citation

Microscopic theory of squeezed light in quantum-dot systems

Sahil D. Patel, Sean Doan, Chen Shang +5 more

We present a cavity-QED theory for generating squeezed light from semiconductor quantum dots (QDs) integrated in microcavities. We formulate equations of motion for an inhomogeneously broadened QD ensemble that is incoherently pumped and simultaneously driven by a coherent seed field, solve for steady states, and compute the output-field quadrature variances. The analysis identifies operating conditions that yield amplitude-quadrature squeezing, with photon-number fluctuations reduced below the coherent-state limit and squeezing levels as large as 5 dB attainable with presently accessible QD and cavity parameters using only ~ 1 uW pump power. We further show that quantum correlations originating from four-wave mixing play a dual role: they both shape the gain spectrum and generate squeezing. These correlations constitute the quantum counterpart of the mean-field (semiclassical) mechanisms responsible for self-mode-locking in QD lasers and the ultra-narrow lasing linewidths achieved under self-injection locking.

arXiv:2508.15114•Physical Review A•Dec 8, 2025•2 citations

Squeezed light from a semiconductor amplifier

Andrey S. Aleksandrov, Anatoly V. Masalov

The possibility of generating light in a squeezed quantum state during saturated light amplification in a semiconductor amplifier is theoretically analyzed. Due to four-wave mixing process during amplification, weak components of the spontaneous emission of the medium with symmetric frequency shifts relative to the strong amplified wave acquire the quantum properties of two-mode squeezed light. The squeezing of quadrature components occurs in the range of frequency shifts of several GHz ($\sim$ the inverse relaxation time of the charge carrier density) and can reach 10 dB or more under optimal conditions. The formation of a two-mode squeezing phase facilitates the observation of the squeezing effect, in which a strong wave, playing the role of a local wave, exhibits quadrature noise suppression without additional homodyne detection.

quant-pharXiv:2610.08005•Oct 7, 2026•0 citations
We present a comprehensive study of quadrature squeezing in a quantum well laser based on a fully quantum Langevin approach. We compute the frequency-resolved squeezing map of the laser field and identify optimal squeezing curves, revealing, for the first time to our knowledge, both frequency-dependent squeezing and complex or hidden squeezing in a semiconductor laser. We further analyse the role of the linewidth enhancement factor (alpha-factor) in the emergence of these features. Our results establish semiconductor lasers as a platform for the generation of non-classical light and open new perspectives for their application in quantum communication and sensing.
The signal to noise ratio of optical systems is ultimately limited by the shot noise due to the Poissonian statistics of the light field. In recent years there has been a considerable effort to find ways to overcome this limitation by generating non-classical light with sub-shot noise statistics. Several groups have demonstrated non-classical light generation in diode lasers or light emitting diodes, and the amplitude fluctuations have been reduced substantially below the shot noise level [1,2]. However, for phase-sensitive measurements it is necessary to generate the more general quadrature squeezed states. Such quadrature squeezed light can be generated either by second-order or third-order nonlinear processes provided the nonlinear material has very low losses at the optical wavelength. To date, the successful generation schemes for quadrature squeezed light have been restricted to atomic vapours, optical fibres, or second-order nonlinear crystals [3]. The possibility of using the large χ(3) nonlinearities of semiconductors at frequencies below the band gap where the optical absorption is small has been discussed in the literature, but so far there have been no successful experiments [4-6]. In this paper we report measurements on GaAs/Al0.3Ga0.7As multiple quantum well waveguides and bulk ZnS in the wavelength range 750 - 890nm. Although we measure much larger nonlinearities in the quantum wells, the strong two-photon absorption is detrimental for squeezed light generation. However, in the ZnS where the laser frequency is below the two- photon absorption edge, we have succeeded in generating quadrature squeezed light in a semiconductor for the first time. On the basis of our results, we would expect that squeezed light could be generated in many other semiconductor systems provided the photon energy is less than half the band-gap energy.
In the recent paper 1 semiclassical treatment of semiconductor laser (SL) with dispersive loss element (DLE) inside the cavity was presented. In SL with frequency dependent photon life time τ p ( τ p −1=τp0−1+2Cφ, φ is the slowly varying phase of an electromagnetic field) phase and amplitude noises were shown to be decreased (1 + Cα)2 / (l +α2) and (1 + Cα)2 / (1 + C2) (α is the linewidth enhancement factor) times, respectively, comparing to the conventional SL (C=0). At the same time, he low frequency portion of current modulation response is unchanged. Possible values of parameter C 1 can be ~10 and some dozens in the case of atomic absorption cell and the weak coupling of SL to an external high-finesse Fabry-Perot etalon, respectively.
Electromagnetic fields, with the noise on one quadrature component reduced to below the quantum mechanical zero-point fluctuation level and the noise on the other quadrature component enhanced to above it, are currently of great interest in quantum optics because of their potential applications to various precision measurements. Such squeezed states of light are usually produced by imposing nonlinear unitary evolution on coherent (or vacuum) states. On the other hand, squeezed states with reduced photon number noise and enhanced phase noise are generated directly by a constant current-driven semiconductor laser. This is the simplest scheme for the generation of nonclassical light, and so far it has yielded the largest quantum noise reduction. The mutual coupling between a lasing junction and an external electrical circuit provides opportunities for exploring the macroscopic and microscopic quantum effects in open systems.
This thesis describes the phase and amplitude noise properties of semiconductor lasers subjected to weak, dispersive optical feedback. In the first half, experiments demonstrating reductions in the laser frequency noise power spectrum and spectral linewidth by several orders of magnitude are presented. Weak optical feedback is applied to the laser by an external cavity containing an atomic vapor. The presence of the vapor adds to the dispersion of the cavity and simultaneously locks the laser to a fixed frequency reference. The role of 1/f frequency noise in limiting the effectiveness of this linewidth reduction technique is investigated and 1/f noise is found to be the dominant contribution to the linewidth under strong optical feedback conditions. An electronic feedback scheme utilizing FM sideband locking is then implemented alongside the optical feedback, and an additional reduction in the low frequency 1/f frequency noise power spectrum by over two orders of magnitude is obtained. With both systems operating simultaneously, the spectral linewidth is narrowed from its free-running value of about 20 MHz to 1.4 kHz. Excellent absolute frequency stability is also achieved. In the second half, the effects of optical feedback on the quantum mechanical amplitude noise properties of the laser are examined. A fully quantum mechanical theory of amplitude and phase noise for a semiconductor laser with weak optical feedback is developed, and the nature and limits of the noise reduction using this technique are established. Particular attention is given to the feedback-induced enhancement of the amplitude squeezing which can be obtained in a pump-suppressed semiconductor laser: an improvement in the squeezing by 3 dB is predicted under moderate pumping. Somewhat larger noise reductions are expected when the laser is operating closer to threshold. Measurements performed on a laser biased close to threshold are then described and a reduction in the low frequency amplitude noise power spectrum by 7 dB is obtained. An experimental investigation of the effects of optical feedback on the amplitude squeezing in a semiconductor laser is then discussed. The low frequency squeezing in a room temperature device is increased from 3% below the standard quantum limit (SQL) under free-running conditions to 19% below the SQL with optimal feedback. The experimental results are found to agree poorly with the single-mode model and a multi-mode model including the effects of asymmetrical cross-mode non-linear gain is developed to explain the discrepancy. Finally, further experimental investigation into the generation of amplitude squeezed light is presented using a commercial laser with no intentional external modifications. Squeezing as large as 29% below the SQL is measured using a balanced homodyne detector with the laser operating near room temperature, corresponding to 41% below the SQL at the output facet of the laser.
We present a cavity-QED theory for generating squeezed light from semiconductor quantum dots (QDs) integrated in microcavities. We formulate equations of motion for an inhomogeneously broadened QD ensemble that is incoherently pumped and simultaneously driven by a coherent seed field, solve for steady states, and compute the output-field quadrature variances. The analysis identifies operating conditions that yield amplitude-quadrature squeezing, with photon-number fluctuations reduced below the coherent-state limit and squeezing levels as large as 5 dB attainable with presently accessible QD and cavity parameters using only ~ 1 uW pump power. We further show that quantum correlations originating from four-wave mixing play a dual role: they both shape the gain spectrum and generate squeezing. These correlations constitute the quantum counterpart of the mean-field (semiclassical) mechanisms responsible for self-mode-locking in QD lasers and the ultra-narrow lasing linewidths achieved under self-injection locking.
The possibility of generating light in a squeezed quantum state during saturated light amplification in a semiconductor amplifier is theoretically analyzed. Due to four-wave mixing process during amplification, weak components of the spontaneous emission of the medium with symmetric frequency shifts relative to the strong amplified wave acquire the quantum properties of two-mode squeezed light. The squeezing of quadrature components occurs in the range of frequency shifts of several GHz (∼\sim∼ the inverse relaxation time of the charge carrier density) and can reach 10 dB or more under optimal conditions. The formation of a two-mode squeezing phase facilitates the observation of the squeezing effect, in which a strong wave, playing the role of a local wave, exhibits quadrature noise suppression without additional homodyne detection.