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arXiv:2606.19585 · Journal of Applied Physics

Electrical Noise Produced by Micron-Sized Particles above a Surface Paul Trap

Ben Saarel, Ozgur Sahin, Alpha T. N'Diaye, Hartmut Häffner

quant-phphysics.atom-phSubmitted Jun 17, 2026• Announced Jun 19, 2026• 0 citations• Revised Jun 26, 2026 (v2)
v1 · Jun 17, 2026v2 · Jun 26, 2026v3 · Jul 17, 2026
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Abstract

Electric field noise produced by the surface of ion trap electrodes reduces the fidelity of quantum computing operations. Despite decades of investigation its microscopic origins remain unclear. Here, we measure electric field noise at trapping locations along the symmetry axis of a linear surface Paul trap. We find that noise levels vary by three orders-of-magnitude in one 600$\,μ$m section of the trap. Optical and scanning electron microscope images show micron-sized particles close to the trapping locations with the highest noise levels. We find that modeling the particles as a lossy dielectric with a effective loss tangent $\tanθ=0.33(0.06)$ describes the magnitude of the noise, as well as its spatial and frequency dependence. Our observations may explain the large variation of reported noise levels in literature.

Comments
Corrected the author order: Hartmut Häffner should be last

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Physical Review Letters•Sep 20, 2018•8 citations
Electric field noise produced by the surface of ion trap electrodes reduces the fidelity of quantum computing operations. Despite decades of investigation its microscopic origins remain unclear. Here, we measure electric field noise at trapping locations along the symmetry axis of a linear surface Paul trap. We find that noise levels vary by three orders-of-magnitude in one 600 μ\,μμm section of the trap. Optical and scanning electron microscope images show micron-sized particles close to the trapping locations with the highest noise levels. We find that modeling the particles as a lossy dielectric with a effective loss tangent tan⁡θ=0.33(0.06)\tanθ=0.33(0.06)tanθ=0.33(0.06) describes the magnitude of the noise, as well as its spatial and frequency dependence. Our observations may explain the large variation of reported noise levels in literature.
Electric field noise produced by the surface of ion trap electrodes reduces the fidelity of quantum computing operations. Despite decades of investigation its microscopic origins remain unclear.This thesis investigates the origins of surface electric field noise by examining its dependence on trap temperature. A set of Al-Cu surface Paul traps are fabricated together and sent to MIT Lincoln Labs (MITLL) and the University of California, Berkeley (UCB). MITLL measures noise from 7 K to room temperature above a first trap and UCB measures noise from room temperature to 590 K above a second trap. The noise measurements from the two experiments are combined to study the noise dependence over the full temperature range from 7-590 K. This is the largest temperature range ever studied using a single trap design and connects the temperature ranges used in all previous studies.We find qualitatively different behaviors at low and high temperatures: from 7-430 K we find that the noise follows the same power-law scaling reported in previous cryogenic studies. At temperatures from 430-590 K, we find that the noise increases much more rapidly than predicted by the power-law scaling. We note a particularly sharp rise in noise at 560 K, which is similar to the sharp rise in noise reported in a previous high-temperature study of a different Al-Cu trap. To determine which physical processes are associated with the change in noise at elevated trap temperatures, we investigate how the material state of the trap electrodes changes when they are heated. We find that the primary physical process associated with the change in noise at high temperature is thermally-activated atom diffusion within the films.This thesis also investigates if the surface structure of room-temperature Au ion traps affects noise levels. We use a heat treatment to restructure the surface of the traps and measure the resulting change in noise. We find that the heat treatment leads to significant changes to the surface structure but causes only a modest change to noise levels. This indicates that the heat-induced changes to the surface do not strongly affect noise. We also note that the noise magnitude observed above these Au traps is state-of-the-art for room-temperature, untreated surface ion traps. This noise level can be explained by modeling the contamination that exists on the trap surface as a dielectric with a loss tangent of tan θ ≈ 0.01.Finally, this thesis investigates the origin of elevated noise levels in one region of a Au surface ion trap. We find that micron-sized particles are located where noise levels are highest, indicating that these particles are likely responsible for the noise. We can explain the magnitude, frequency, and distance dependence of the noise if we treat the particles as a lossy dielectric with a loss tangent tan θ ≈ 0.3.
Electric-field noise is a major limiting factor in the performance of ion traps and other quantum devices. Despite intensive research over the past decade, the nature and cause of electric field noise near surfaces is not well understood. This dissertation reports the high- temperature dependence of electric-field noise above an Al-Cu surface using a trapped 40Ca+ ion as a probe.We employ a novel setup with a surface ion trap mounted on a heater for studies of the temperature dependence of electric-field noise. To characterize the Al-Cu material, we explore the effects of heat treatment through ex situ annealing followed by inspection in a scanning electron microscope. To calibrate the temperature of the trap, we demonstrate the use of thermal imaging for monitoring the temperature of an ion trap in vacuum.The temperature and frequency dependence of electric-field noise above the surface is measured using the heating rate of a single ion in a surface-electrode Paul trap. We find that the heating rate saturates at temperatures greater than 450 K. We find that the frequency dependence shows a 1/f behavior, and has a lower frequency scaling exponent at high temperatures than at room temperature. We show that these results are a reflection of the surface-related noise by eliminating other possible sources of noise.Building on historical data for resistance fluctuations in thin films, we develop the thermally-activated fluctuator model to describe the results. We find that a broad distribution of fluctuators with energy barriers peaked around 0.5 eV accurately models both the temperature and frequency dependence of the electric-field noise measured. We present the interpretation of this model as a way to infer that the cause of electric-field noise in the trap is likely defect motion in the metal surface, connecting the problems faced in ion trapping to a large body of work in solid state physics.
Motional heating of ions in microfabricated traps is one of the open challenges hindering experimental realizations of large-scale quantum processing devices. Recently, a series of measurements of the heating rates in surface-electrode ion traps characterized their frequency, distance, and temperature dependencies, but our understanding of the microscopic origin of this noise remains incomplete. In this work we develop a theoretical model for the electric field noise which is associated with a random distribution of adsorbed atoms on the trap electrode surface. By using first-principles calculations of the fluctuating dipole moments of the adsorbed atoms we evaluate the distance, frequency, and temperature dependence of the resulting electric field fluctuation spectrum. Our theory reproduces correctly the ${d}^{\ensuremath{-}4}$ dependence with distance of the ion from the electrode surface and calculates the noise spectrum beyond the standard scenario of two-level fluctuators by incorporating all the relevant vibrational states. Our model predicts a regime of 1/f1/f1/f noise which commences at roughly the frequency of the fundamental phonon transition rate and a thermally activated noise spectrum which for higher temperatures exhibits a crossover as a function of frequency.
Electric-field noise in microfabricated surface ion traps contributes to gate errors in trapped-ion quantum computers, but this noise has been challenging to predict. Here, we present a method to predict the electric-field noise arising from fluctuations in the bulk of dielectric and metallic materials. The method is valid for arbitrary trap geometries, and the only relevant material property is energy loss. We apply it to an ion trap with an electrically floating electrode and find the contribution from dielectrics to be dominant. Our model predicts the observed noise for this trap within a factor of four. In addition, we apply our model to typical surface trap designs and analyze how the electrode structures shield the noise.
The electric-field noise above a layered structure composed of a planar metal electrode covered by a thin dielectric is evaluated and it is found that the dielectric film considerably increases the noise level, in proportion to its thickness. Importantly, even a thin (mono) layer of a low-loss dielectric can enhance the noise level by several orders of magnitude compared to the noise above a bare metal. Close to this layered surface, the power spectral density of the electric field varies with the inverse fourth power of the distance to the surface, rather than with the inverse square, as it would above a bare metal surface. Furthermore, compared to a clean metal, where the noise spectrum does not vary with frequency (in the radio-wave and microwave bands), the dielectric layer can generate electric-field noise which scales in inverse proportion to the frequency. For various realistic scenarios, the noise levels predicted from this model are comparable to those observed in trapped-ion experiments. Thus, these findings are of particular importance for the understanding and mitigation of unwanted heating and decoherence in miniaturized ion traps.
Electric-field noise from ion-trap electrode surfaces can limit the fidelity of multiqubit entangling operations in trapped-ion quantum information processors and can give rise to systematic errors in trapped-ion optical clocks. The underlying mechanism for this noise is unknown, but it has been shown that the noise amplitude can be reduced by energetic ion bombardment, or “ion milling,” of the trap electrode surfaces. Using a single trapped ⁸⁸Sr⁺ ion as a sensor, we investigate the temperature dependence of this noise both before and after ex situ ion milling of the trap electrodes. Making measurements over a trap electrode temperature range of 4 K to 295 K in both sputtered niobium and electroplated gold traps, we see a marked change in the temperature scaling of the electric-field noise after ion milling: power-law behavior in untreated surfaces is transformed to Arrhenius behavior after treatment. The temperature scaling becomes material-dependent after treatment as well, strongly suggesting that different noise mechanisms are at work before and after ion milling. To constrain potential noise mechanisms, we measure the frequency dependence of the electric-field noise, as well as its dependence on ion-electrode distance, for niobium traps at room temperature both before and after ion milling. These scalings are unchanged by ion milling.