Thin-film lithium niobate (TFLN) has emerged as a leading platform for large-scale programmable photonic circuits for quantum and classical applications. As circuits scale in complexity, low-loss routing of broadband pump and signal fields becomes essential. Here, we present closed-form analytical models and experimentally demonstrate compact, fast-quasi-adiabatic driving-optimized wavelength combiners and filters operating at the fundamental harmonic (FH, 1550 nm) and second-harmonic (SH, 775 nm) wavelengths. Our designs achieve ultra-low loss below 0.06 dB across a 90 nm bandwidth at FH, while maintaining extinction ratios exceeding 25 dB. At SH, the loss remains below 0.12 dB over a 45 nm bandwidth with extinction ratios greater than 19 dB. Devices fabricated on a 300-nm TFLN platform exhibit added loss below 0.1 dB across 1550 - 1600 nm, with minimum values of 0.04 dB around 1580 nm and 0.021 dB at 775 nm. Combined with recent advances in on-chip quantum state generation, low-loss interferometers, and detection, these results enable high-fidelity quantum photonic circuits on the TFLN platform.
Thin-film lithium niobate (TFLN) has emerged as a leading platform for large-scale programmable photonic circuits for quantum and classical applications. As circuits scale in complexity, low-loss routing of broadband pump and signal fields becomes essential. Here, we present closed-form analytical models and experimentally demonstrate compact, fast-quasi-adiabatic driving-optimized wavelength combiners and filters operating at the fundamental harmonic (FH, 1550 nm) and second-harmonic (SH, 775 nm) wavelengths. Our designs achieve ultra-low loss below 0.06 dB across a 90 nm bandwidth at FH, while maintaining extinction ratios exceeding 25 dB. At SH, the loss remains below 0.12 dB over a 45 nm bandwidth with extinction ratios greater than 19 dB. Devices fabricated on a 300-nm TFLN platform exhibit added loss below 0.1 dB across 1550 - 1600 nm, with minimum values of 0.04 dB around 1580 nm and 0.021 dB at 775 nm. Combined with recent advances in on-chip quantum state generation, low-loss interferometers, and detection, these results enable high-fidelity quantum photonic circuits on the TFLN platform.
Practical quantum networks will require multi-qubit quantum nodes. This in turn will increase the complexity of the photonic circuits needed to control each qubit and require strategies to multiplex memories. Integrated photonics operating at visible to near-infrared (VNIR) wavelength range can provide solutions to these needs. In this work, we realize a VNIR thin-film lithium niobate (TFLN) integrated photonics platform with the key components to meet these requirements, including low-loss couplers (<1 dB/facet), switches (>20 dB extinction), and high-bandwidth electro-optic modulators (>50 GHz). With these devices, we demonstrate high-efficiency and CW-compatible frequency shifting (>50% efficiency at 15 GHz), as well as simultaneous laser amplitude and frequency control. Finally, we highlight an architecture for multiplexing quantum memories and outline how this platform can enable a 2-order of magnitude improvement in entanglement rates over single memory nodes. Our results demonstrate that TFLN can meet the necessary performance and scalability benchmarks to enable large-scale quantum nodes.
Although thin-film lithium niobate (TFLN) facilitates efficient signal generation and nonlinear and quantum interactions, the realization of optical parametric amplification (OPA) that can provide simultaneous ultra-broadband and high-gain operation in an integrated chip continues to pose a challenge. Here we demonstrate continuous-wave-pumped OPA in an X-cut MgO-doped, dispersion-engineered, and adaptively-poled TFLN waveguide of 1.6 cm length, achieving a flat-top profile covering a 450 nm-wide optical wavelength window, corresponding to a 3-dB gain bandwidth of about 56 THz. Among reported TFLN platforms, our device exhibits the broadest 3-dB gain bandwidth. The same device can be pumped either directly at visible wavelengths through second-order x(2) interactions or in the telecom band through cascaded x(2) processes, the latter eliminating the need for a high-power visible pump laser. We achieve maximum gains of 8.87 +- 0.39 dB and 10.79 +- 0.43 dB at on-chip pump powers of 74 mW and 170 mW for the direct and cascaded schemes, respectively. We further directly probe OPA gain across the 1650-1900 nm wavelength range, where experimental gain measurements have remained scarce. With a normalized on-chip gain of 1.21 dB per W per mm, our device sets a new benchmark among reported cascaded x(2) nonlinear processes. This work advances the realization of integrated optical parametric amplifiers, offering high efficiency, robust gain, ultra-broadband bandwidth, and continuous-wave operation, thereby enabling new capabilities for next-generation quantum sensing and photonic systems.
Within the last decade, thin-film lithium niobate (TFLN) has emerged as a leading integrated photonics platform with immediate applications in classical communications. Concurrently, TFLN components tailored to the requirements of photonic quantum information processing have also garnered considerable interest. Chief among these is the quasi-phase matched (QPM) nonlinear frequency mixer—implemented via periodic domain inversion in ferroelectric lithium niobate—which can be used to generate photon pairs, squeezed states of light, and to perform single photon frequency conversion. Here, we demonstrate progress towards realizing a spectrally separable photon pair source in lithium niobate via waveguide dispersion engineering—a technique uniquely enabled by sub-wavelength optical mode confinement in the thin-film platform. Subsequently, we design optimize a scalable fabrication process to produce QPM TFLN devices for applications that require strict adherence to a specified operating wavelength, such as quantum frequency conversion in a quantum communications network. Finally, we explore how high-performance electro-optic devices can be combined with these nonlinear optical devices to realize a multi-functional platform in which quantum states of light can be generated and manipulated within a single, compact photonic integrated circuit.
Photonics is poised to play a unique role in quantum technology for computation, communications and sensing. Meanwhile, integrated photonic circuits-with their intrinsic phase stability and high-performance, nanoscale components-offer a route to scaling. However, each integrated platform has a unique set of advantages and pitfalls, which can limit their power. So far, the most advanced demonstrations of quantum photonic circuitry has been in silicon photonics. However, thin-film lithium niobate (TFLN) is emerging as a powerful platform with unique capabilities; advances in fabrication have yielded loss metrics competitive with any integrated photonics platform, while its large second-order nonlinearity provides efficient nonlinear processing and ultra-fast modulation. In this short review, we explore the prospects of dynamic quantum circuits-such as multiplexed photon sources and entanglement generation-on hybrid TFLN on silicon (TFLN/Si) photonics and argue that hybrid TFLN/Si photonics may have the capability to deliver the photonic quantum technology of tomorrow.
Quantum frequency conversion (QFC) plays a critical role in practical quantum information technology as it provides a bridge among different quantum devices, which usually operate at different optimal wavelength. Photons with longer wavelength feature lower propagation loss and lower solar radiation noise in free space, hence hold promise for daylight long distance quantum communication. Besides, wavelength over 2 μ m also overlap with the absorption band of many important molecules, hence is of great importance for gases and molecules detection. Yet development of technology in this region has been hindered primarily by the spectral mismatch with other quantum devices, notably quantum detection and memories, which optimally operate in the visible band. Here, we demonstrate the first QFC of 2 μ m photons to the visible region on domain-engineered thin-film lithium niobate (TFLN) platform. Benefiting from the strong nonlinearity in such integrated platform, the highest internal quantum conversion efficiency of 42% is achieved at an exceptionally low pump saturation power of only 58 mW . This work provides an efficient interconnection between photons operating at the visible and 2 μ m bands in the integrated platform, pushing forward the development of practical quantum chips for application of quantum communication, sensing and metrology in the future. • Strong mode confinement and domain-engineered thin film lithium niobate (TFLN), combined with large χ ( 2 ) , enable efficient on-chip nonlinear conversion. • First demonstration of quantum frequency conversion (QFC) of 2 μ m band photon on thin film lithium niobate.
Photonics has proven to be a very attractive platform for quantum technologies, offering key features such as high-fidelity qubits and room-temperature signal processing. Advancements in integrated photonics are expected to further enhance these capabilities as the technology evolves from few-photon architectures to systems capable of generating and processing tens, possibly hundreds, of photons, marking critical progress toward scalable quantum information processing. Although each integrated platform has its own unique advantages and limitations, thin-film lithium niobate (TFLN) photonics has recently emerged as a strong contender thanks to its low-loss characteristics, large electro-optic and nonlinear coefficients, broad transparency window, and ultra-fast modulation capabilities. In this review, we examine the latest developments in TFLN quantum photonics and identify promising directions and challenges for future research in this field.