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arXiv:2603.17936

Exploration of Fluxonium Parameters for Capacitive Cross-Resonance Gates

Eugene Y. Huang, Christian Kraglund Andersen

quant-phSubmitted Mar 18, 2026• Announced Mar 19, 2026• 0 citations
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Abstract

We study the cross-resonance effect in capacitively-coupled fluxonium qubits and devise a simple formula for their maximum ZX interaction strength. By going beyond the perturbative regime, we find that a CNOT gate can generally be realized in under 200 ns with residual ZZ limited to 50 kHz, for fluxonium qubits with frequencies below 1 GHz. Our analysis relies on a semi-analytical method: we first numerically diagonalize the Floquet Hamiltonian of the strongly-driven control qubit and then perturbatively incorporate the weak qubit-qubit coupling to obtain an effective Hamiltonian. We also derive frequency collision windows around harmful control-target and control-spectator transitions. For large fluxonium devices, we predict a collision-free yield that is considerably less sensitive to junction variability compared to transmons in the same layout. These results support the viability of an all-fluxonium cross-resonance architecture with only capacitive couplings.

Comments
34 pages, 22 figures

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We study the cross-resonance effect in capacitively-coupled fluxonium qubits and devise a simple formula for their maximum ZX interaction strength. By going beyond the perturbative regime, we find that a CNOT gate can generally be realized in under 200 ns with residual ZZ limited to 50 kHz, for fluxonium qubits with frequencies below 1 GHz. Our analysis relies on a semi-analytical method: we first numerically diagonalize the Floquet Hamiltonian of the strongly-driven control qubit and then perturbatively incorporate the weak qubit-qubit coupling to obtain an effective Hamiltonian. We also derive frequency collision windows around harmful control-target and control-spectator transitions. For large fluxonium devices, we predict a collision-free yield that is considerably less sensitive to junction variability compared to transmons in the same layout. These results support the viability of an all-fluxonium cross-resonance architecture with only capacitive couplings.
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We propose and analyze two types of microwave-activated gates between a fluxonium and a transmon qubit, namely a cross-resonance (CR) and a CPHASE gate. The large frequency difference between a transmon and a fluxonium makes the realization of a two-qubit gate challenging. For a medium-frequency fluxonium qubit, the transmon-fluxonium system allows for a cross-resonance effect mediated by the higher levels of the fluxonium over a wide range of transmon frequencies. This allows one to realize the cross-resonance gate by driving the fluxonium at the transmon frequency, mitigating typical problems of the cross-resonance gate in transmon-transmon chips related to frequency targeting and residual ZZZZZZ coupling. However, when the fundamental frequency of the fluxonium enters the low-frequency regime below 100MHz100\phantom{\rule{0.16em}{0ex}}\mathrm{MHz}100MHz, the cross-resonance effect decreases leading to long gate times. For this range of parameters, a fast microwave CPHASE gate can be implemented using the higher levels of the fluxonium. In both cases, we perform numerical simulations of the gate showing that a gate fidelity above 9999%99 can be obtained with gate times between 100 and 300ns300\phantom{\rule{0.16em}{0ex}}\mathrm{ns}300ns. Next to a detailed gate analysis, we perform a study of chip yield for a surface code lattice of fluxonia and transmons interacting via the proposed cross-resonance gate. We find a much better yield as compared to a transmon-only architecture with the cross-resonance gate as native two-qubit gate.
In recent years, several architectures have been proposed for implementing two-qubit operations on fluxonium superconducting qubits. A particularly promising approach, which was demonstrated experimentally by Refs. [1,2], employs a transmon superconducting qubit as a tunable coupler between the fluxonium qubits. These experiments have shown that the transmon coupler enables fast, high-fidelity two-qubit operations while suppressing unwanted ZZ crosstalk between the fluxonium qubits. In this work, we numerically study the scalability of this architecture. We find that, when trivially scaling this architecture, crosstalk from spectator qubits limits the gate fidelity to below 90%. We show that these spectator errors can be reduced to below 10−410^{-4}10−4 by reducing the coupling strength and by dynamically tuning transmons that are not used for a two-qubit operation to an off position. We further investigate the resilience of the operation to direct capacitive coupling between the transmon couplers and to microwave crosstalk.
We demonstrate a controlled-Z gate between capacitively coupled fluxonium qubits with transition frequencies 72.3 MHz72.3~\textrm{MHz}72.3 MHz and 136.3 MHz136.3~\textrm{MHz}136.3 MHz. The gate is activated by a 61.6 ns61.6~\textrm{ns}61.6 ns long pulse at the frequency between non-computational transitions ∣10⟩−∣20⟩|10\rangle - |20\rangle∣10⟩−∣20⟩ and ∣11⟩−∣21⟩|11\rangle - |21\rangle∣11⟩−∣21⟩, during which the qubits complete only 444 and 888 Larmor periods, respectively. The measured gate error of (8±1)×10−3(8\pm1)\times 10^{-3}(8±1)×10−3 is limited by decoherence in the non-computational subspace, which will likely improve in the next generation devices. Although our qubits are about fifty times slower than transmons, the two-qubit gate is faster than microwave-activated gates on transmons, and the gate error is on par with the lowest reported. Architectural advantages of low-frequency fluxoniums include long qubit coherence time, weak hybridization in the computational subspace, suppressed residual ZZZZZZ-coupling rate (here 46 kHz46~\mathrm{kHz}46 kHz), and absence of either excessive parameter matching or complex pulse shaping requirements.
The superconducting fluxonium qubit has a great potential for high-fidelity quantum gates with its long coherence times and strong anharmonicity at the half-flux-quantum sweet spot. However, current implementations of two-qubit gates compromise fluxonium's coherence properties by requiring either a temporary population of the noncomputational states or tuning the magnetic flux off the sweet spot. Here we realize a fast all-microwave cross-resonance gate between two capacitively coupled fluxoniums with the qubit dynamics well confined to the computational space. We demonstrate a direct controlled not (cnot) gate in 70 ns with fidelity up to F=0.9949(6)\mathcal{F}=0.9949(6)F=0.9949(6) despite the limitations of a suboptimal measurement setup and device coherence. Our results project a possible pathway towards reducing the two-qubit error rate near to or below ${10}^{\ensuremath{-}4}$ with present-day technologies.
Fluxonium qubits combine long coherence times with strong anharmonicity, making them attractive for scalable superconducting quantum processors. Recent experiments have demonstrated high-fidelity two-qubit gates and multi-qubit entanglement in one-dimensional and connectivity-four fluxonium processors, motivating their extension to highly connected two-dimensional (2D) architectures. A central challenge in this extension is to achieve strong coupling to multiple circuit elements while preserving the finite capacitance budget of fluxonium qubits, which constrains the attainable qubit-qubit effective coupling strength and, consequently, two-qubit gate performance. Here, we establish a unified theoretical framework that identifies the connectivity-dependent upper bound on capacitive coupling and quantifies its reduction by distinct parasitic-capacitance channels, applicable across both fluxonium and transmon regimes. We show that pad-to-ground loading is primarily geometry limited and can be substantially suppressed through qubit-pad engineering, whereas inter-pad loading is ultimately constrained by parasitic capacitances of Josephson junctions and Josephson junction arrays. Building on these insights, we formulate practical design principles and numerically demonstrate two-qubit gates as fast as 27 ns and leakage-induced infidelity below 10−310^{-3}10−3 under representative fabrication variations in 2D fluxonium architectures. These results establish a quantitative framework for understanding and mitigating capacitive loading, suggesting that it does not impose a fundamental performance limit on highly connected fluxonium processors.