Near-Infrared Quantum Emission from Oxygen-Related Defects in hBN
Sean Doan, Sahil D. Patel, Yilin Chen, Jordan A. Gusdorff. Mark E. Turiansky, Luis Villagomez, Luka Jevremovic, Nicholas Lewis, Kenji Watanabe, Takashi Taniguchi, Lee C. Bassett, Chris Van de Walle, Galan Moody
quant-phphysics.opticsSubmitted Dec 18, 2025• Announced Dec 19, 2025
Color centers hosted in hexagonal boron nitride (hBN) have emerged as a promising platform for single-photon emission and coherent spin-photon interfaces that underpin quantum communication and quantum networking technologies. As a wide-bandgap van der Waals material, hBN can host individual optically active quantum defects emitting across the ultraviolet to visible spectrum, but existing color centers often show broad phonon sidebands (PSBs), unstable emission, or inconvenient wavelengths. Here, we show a simple, scalable oxygen-plasma process that reproducibly creates oxygen-related single quantum emitters in hBN with blinking-free zero-phonon lines spanning the near-infrared (NIR) spectrum from 700-960 nanometers. These emitters demonstrate room-temperature operation, high brightness, and ultra-sharp cryogenic linewidths in the few-gigahertz range under non-resonant excitation. Analysis of the PSBs shows weak electron-phonon coupling and predominant zero-phonon-line emission, while first-principles calculations identify plausible oxygen-related defect configurations. These emitters provide a promising platform for indistinguishable NIR single photons towards free-space quantum networking.
Color centers hosted in hexagonal boron nitride (hBN) have emerged as a promising platform for single-photon emission and coherent spin-photon interfaces that underpin quantum communication and quantum networking technologies. As a wide-bandgap van der Waals material, hBN can host individual optically active quantum defects emitting across the ultraviolet to visible spectrum, but existing color centers often show broad phonon sidebands (PSBs), unstable emission, or inconvenient wavelengths. Here, we show a simple, scalable oxygen-plasma process that reproducibly creates oxygen-related single quantum emitters in hBN with blinking-free zero-phonon lines spanning the near-infrared (NIR) spectrum from 700-960 nanometers. These emitters demonstrate room-temperature operation, high brightness, and ultra-sharp cryogenic linewidths in the few-gigahertz range under non-resonant excitation. Analysis of the PSBs shows weak electron-phonon coupling and predominant zero-phonon-line emission, while first-principles calculations identify plausible oxygen-related defect configurations. These emitters provide a promising platform for indistinguishable NIR single photons towards free-space quantum networking.
Collective light emission from many-body quantum systems is a cornerstone of quantum optics, yet its implementation in solid-state platforms operating under ambient conditions remains highly challenging. Large-bandgap van der Waals materials such as hexagonal boron nitride (hBN) host stable room-temperature single-photon emitters with narrow linewidths across a broad spectral range. However, cooperative radiative effects in this system have not been previously explored. Here we demonstrate collective emission from quantum-emitter ensembles in hBN layers when the emitters are nearly indistinguishable and positioned within a sub-wavelength proximity. Using confocal microscopy and a Hanbury Brown-Twiss (HBT) configuration, we identify both isolated emitters and ensembles activated by localized electron-beam irradiation. Time-resolved photoluminescence measurements reveal a superlinear intensity enhancement and a pronounced acceleration of the radiative decay in tightly confined ensembles, with lifetimes approaching the temporal resolution of our experimental system (about 500 ps), compared to approximately 1.85 ns for single emitters or large, spatially extended ensembles. Complementary second-order photon-correlation measurements exhibit sub-Poissonian antidip consistent with emission from a few indistinguishable emitters. The simultaneous observation of lifetime shortening and enhanced emission provides direct evidence of cooperative emission at room temperature, achieved without optical cavities or cryogenic cooling. These results establish optically active defect ensembles in hBN as a scalable solid-state platform for engineered collective quantum optics in two-dimensional materials, opening avenues toward ultrabright superradiant light sources and nonclassical photonic states for quantum technologies.
Hyperbolic phonon polaritons (HPPs) in hexagonal boron nitride (hBN) confine mid-infrared light to deep-subwavelength scales and may offer a powerful route to strong light-matter interactions. Generation and control of HPPs are typically accessed using classical near-field probes, which limits experiments at the quantum level.A complementary frontier in hBN research focuses on color centers: bright, stable, atomically localized emitters that have rapidly emerged as a promising platform for solid-state quantum optics. Here we establish a key connection between these two directions by developing a cavity-QED framework in which a single hBN color center serves as a quantum source of HPPs. We quantify the emitter-HPP interaction and analyze two generation schemes. The first is spontaneous emission into the phonon sideband, which can produce single-HPP events and, in ultrathin slabs, becomes single-mode with an enhanced decay rate. The second is a stimulated Raman process that provides frequency selectivity, tunable conversion rate, and narrowband excitation. This drive launches spatially confined, ray-like HPPs that propagate over micrometer distances. We also outline a two-emitter correlation measurement that can directly test the single-polariton character of these emissions. By connecting color-center quantum optics with hyperbolic polaritonics, our approach enables quantum emitters to act as on-chip quantum sources and controls for HPPs, while HPPs provide long-range channels that couple spatially separated emitters. Together, these capabilities point to a new direction for mid-infrared photonic experiments that unite strong coupling, spectral selectivity, and spatial reach within a single material system.
Sources of pure and indistinguishable single-photons are critical for near-future optical quantum technologies. Recently, color centers hosted by two-dimensional hexagonal boron nitride (hBN) have emerged as a promising platform for high luminosity room temperature single-photon sources. Despite the brightness of the emitters, the spectrum is rather broad and the single-photon purity is not sufficient for practical quantum information processing. Here, we report integration of such a quantum emitter hosted by hBN into a tunable optical microcavity. A small mode volume of the order of λ 3 allows us to Purcell enhance the fluorescence, with the observed excited state lifetime shortening. The cavity significantly narrows the spectrum and improves the single-photon purity by suppression of off-resonant noise. The complete device, including all optics, driving electronics, and control units, is compact and integrated in a small volume of 10 × 10 × 10 cm 3, allowing for portable usage in mobile applications.
Defects in solid-state systems constitute a promising platform for the realization of deterministic quantum emitters. Among many candidate materials and emitters, point defects in hexagonal Boron Nitride (hBN) have recently emerged as particularly promising. In this work, we probe the coherence of an individual B center with a zero phonon line at 436 nm, under pulsed resonant excitation. We observe power-dependent Rabi oscillations up to 5π, demonstrating optical coherent control of the transition. We achieve an excellent single photon purity of 93% at π-pulse. Furthermore, we probe the coherence of the two-level system using Ramsey interferometry, revealing an inhomogeneous coherence time of T_2*=0.60 ns. These results establish B centers in hBN as viable candidates for triggered, coherent quantum emitters and represent an important step towards their integration into quantum photonic platforms.
Optically active defects in hexagonal boron nitride (hBN) have become amongst the most attractive single-photon emitters in the solid state, owing to their high-quality photophysical properties, combined with the unlimited possibilities of integration offered by the host van der Waals material. In particular, the B centres, with their narrow linewidth, low wavelength spread and controllable positioning, have raised a particular interest for integrated quantum photonics. However, to date, either their excitation or their detection has been performed non-resonantly due to the difficulty of rejecting the backreflected laser light at the same wavelength, thereby preventing to take full benefit from their high coherence in quantum protocols. Here, we make use of narrow-linewidth emitters integrated in a hybrid metal-dielectric structure to implement cross-polarisation laser rejection. This allows us to observe resonantly scattered photons, with associated experimental signatures of optical coherence in both continuous-wave (cw) and pulsed regimes, respectively the Mollow triplet and Hong-Ou-Mandel interference from zero-phonon-line emission. The two-photon interference visibilities of 0.93−0.21+0.07 and 0.92−0.26+0.08 we measured for two emitters demonstrate the potential of B centres in hBN for applications to integrated quantum information. Single-photon sources in van der Waals materials offer new perspectives of integration for quantum information applications. Here, the authors implement resonance fluorescence of a single colour centre in hBN, a quantum optics regime that simultaneously allows for emitter coherent control and generation of indistinguishable photons.
Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional host for stable single-photon emission owing to its wide bandgap, high photostability, and compatibility with nanophotonic integration. We present a simulation-based study of temperature-dependent spectral dynamics and optical coherence in a mechanically decoupled quantum emitter in hBN. Employing a hybrid stochastic framework that combines Ornstein--Uhlenbeck detuning fluctuations with temperature-dependent, Gaussian-distributed discrete frequency jumps, motivated by experimentally observed spectral diffusion and blinking, we reproduce the measured evolution of inhomogeneous linewidth broadening and the progressive degradation of photon coherence across the relevant cryogenic range (5-30K). The model captures phonon-related spectral diffusion with a cubic temperature dependence and the onset of jump-like spectral instabilities at higher temperatures. By calibrating the hybrid diffusion, jump parameters to the experimentally measured full width at half maximum (FWHM) of the emission line and analyzing the second-order correlation function g(2)(τ) under resonant driving, we establish a unified phenomenological description that links stochastic detuning dynamics to the decay of optical coherence in a resonantly driven emitter. Analysis of g(2)(τ) under resonant driving reveals an additional dephasing rate γsd+j that rises monotonically with temperature and drive strength, leading to a predicted critical crossover to overdamped dynamics at Tcrit≈25.91~K. This hybrid framework provides a quantitative connection between accessible spectroscopic observables and the dominant noise mechanisms limiting coherent optical control in mechanically decoupled quantum emitters, exemplified in hBN and generalizable to similar emitters in other materials.