Closing the gap between ray tracing simulations and experimentally observed electron jetting in bilayer graphene (BLG), we study all-electronic, gate-defined BLG cavities using tight-binding simulations and semiclassical equations of motion. Such cavities offer a rich playground to investigate anisotropic electron transport due to the trigonally warped Fermi surfaces. In this work, we achieve two things: First, we verify the existence of triangular modes (as predicted by classical ray tracing calculations) in the quantum solutions of closed circular BLG cavities. Then, we explore signatures of said triangular modes in transport through open BLG cavities connected to leads. We show that the triangular symmetry translates into anisotropic transport and present an optimal setup for experimental detection of the triangular modes as well as for controlled modulation of transport in preferred directions.
Closing the gap between ray tracing simulations and experimentally observed electron jetting in bilayer graphene (BLG), we study all-electronic, gate-defined BLG cavities using tight-binding simulations and semiclassical equations of motion. Such cavities offer a rich playground to investigate anisotropic electron transport due to the trigonally warped Fermi surfaces. In this work, we achieve two things: First, we verify the existence of triangular modes (as predicted by classical ray tracing calculations) in the quantum solutions of closed circular BLG cavities. Then, we explore signatures of said triangular modes in transport through open BLG cavities connected to leads. We show that the triangular symmetry translates into anisotropic transport and present an optimal setup for experimental detection of the triangular modes as well as for controlled modulation of transport in preferred directions.
We present a mainly analytical study of the entanglement spectrum of Bernal-stacked graphene bilayers in the presence of trigonal warping in the energy spectrum. Upon tracing out one layer, the entanglement spectrum shows qualitative geometric differences to the energy spectrum of a graphene monolayer. However, topological quantities such as Berry-phase-type contributions to Chern numbers agree. The latter analysis involves not only the eigenvalues of the entanglement Hamiltonian but also its eigenvectors. We also discuss the entanglement spectra resulting from tracing out other sublattices. As a technical basis of our analysis, we provide closed analytical expressions for the full eigensystem of bilayer graphene in the entire Brillouin zone with a trigonally warped spectrum.
The rich phenomenology of twisted bilayer graphene (TBG) near the magic angle is believed to arise from electron correlations in topological flat bands.An unbiased approach to this problem is highly desirable, but also particularly challenging, given the multiple electron flavors, the topological obstruction to defining tight-binding models, and the long-ranged Coulomb interactions.While numerical simulations of realistic models have thus far been confined to zero temperature, typically excluding some spin or valley species, analytic progress has relied on fixed point models away from the realistic limit.Here, we present unbiased Monte Carlo simulations of realistic models of magic-angle TBG at charge neutrality.We establish the absence of a sign problem for this model in a momentumspace approach and describe a computationally tractable formulation that applies even on breaking chiral symmetry and including band dispersion.Our results include (i) the emergence of an insulating Kramers intervalley coherent ground state in competition with a correlated semimetal phase, (ii) detailed temperature evolution of order parameters and electronic spectral functions that reveal a "pseudogap" regime, in which gap features are established at a higher temperature than the onset of order, and (iii) predictions for electronic tunneling spectra and their evolution with temperature.Our results pave the way towards uncovering the physics of magic-angle graphene through exact simulations of over a hundred electrons across a wide temperature range.
Bilayer graphene is a maturing material platform for gate-defined quantum dots that hosts long-lived spin and valley states. Implementing solid-state qubits in bilayer graphene requires a fundamental understanding of such confined electronic systems. In particular, states of two and three carriers, for which the exchange interaction between particles plays a crucial role, are a cornerstone for qubit readout and manipulation. Here we report on the spectroscopy of few-carrier states in bilayer graphene quantum dots, using circuit quantum electrodynamics (cQED) techniques that offer substantially improved energy resolution compared to standard transport techniques. Measurements using a superconducting high-impedance resonator capacitively coupled to the double quantum dot reveal dispersive features of two and three electron states, enabling the detection of Pauli spin and valley blockade and the characterization of the spin-orbit gap at zero magnetic field. The results deepen our understanding of few-carrier spin and valley states in bilayer graphene quantum dots and demonstrate that cQED techniques are a powerful state-selective probe for semiconductor nanostructures.
Bilayer graphene (BLG) quantum dots (QDs) are a promising platform for semiconductor qubits. However, the low-frequency charge noise that may ultimately limit coherence has remained largely unexplored. Here, we systematically characterize charge noise in gate-defined BLG QDs using transport-based noise spectroscopy. We extract a median amplitude of $ S_μ^{1/2} (1~\text{Hz}) = 1.16~μ\text{eV}/\sqrt{\text{Hz}}$, placing BLG well within the range reported for established semiconductor quantum-dot platforms. Across variations in charge occupation, confinement, source-drain bias, and charge-sensor operating conditions, neither the noise amplitude nor the spectral dependence shows a reproducible trend in electrostatic tuning, indicating that we extracted the intrinsic semiconductor noise. Consistent noise levels are further observed in double QDs and confirmed using an independent superconducting resonator-based dispersive readout. Extending the study to BLG devices incorporating transition metal dichalcogenide layers reveals no measurable charge noise increase in weakly proximitized QDs. These results validate BLG as a viable platform for coherent quantum information processing.
Understanding how common dielectric substrates influence the spin transport properties of graphene is essential for advancing graphene-based spintronic technologies. Here we use a comprehensive set of numerical simulations to reveal how a SiO2 substrate modifies the spin texture and governs spin relaxation in graphene. Using first-principles density matrix dynamics simulations, as well as tight-binding (TB) transport simulations, we quantify the effects of electron-phonon scattering, impurity scattering, and electrostatic disorder on the spin relaxation process. We find that a 2D SiO2 substrate induces a predominantly Rashba-type helical spin texture in graphene, leading to a spin lifetime anisotropy of 1/2. Meanwhile, bulk SiO2 breaks in-plane symmetry in graphene, leading to anisotropic in-plane and out-of-plane components in the spin texture, which we capture with a newly-developed TB model of graphene. Transport simulations under realistic disorder conditions reveal a spin lifetime anisotropy between 0.5 and 1, similar to what is seen in measurements of graphene spin valves on a SiO2 substrate. Our results reveal a more complex picture of spin relaxation at the ubiquitous graphene/SiO2 interface, beyond the standard Rashba model, providing critical insight for interpreting experiments and guiding substrate engineering for graphene spintronics.
Recent experimental [I. Jo et al ., Phys. Rev. Lett. 119, 016402 (2017)] and numerical [M. Ippoliti, S. D. Geraedts, R. N. Bhatt, Phys. Rev. B 95, 201104 (2017)] evidence suggests an intriguing universal relationship between the Fermi surface anisotropy of the noninteracting parent 2-dimensional (2D) electron gas and the strongly correlated composite Fermi liquid formed in a strong magnetic field close to half-filling. Inspired by these observations, we explore more generally the question of anisotropy renormalization in interacting 2D Fermi systems. Using a recently developed [H. -K. Tang et al ., Science 361, 570 (2018)] nonperturbative and numerically exact projective quantum Monte Carlo simulation as well as other numerical and analytic techniques, only for Dirac fermions with long-range Coulomb interactions do we find a universal square-root decrease of the Fermi-surface anisotropy. For the ν = 1 / 2 composite Fermi liquid, this result is surprising since a Dirac fermion ground state was only recently proposed as an alternative to the usual Halperin–Lee–Read state. Our proposed universality can be tested in several anisotropic Dirac materials including graphene, topological insulators, organic conductors, and magic-angle twisted bilayer graphene.