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arXiv:2509.07870 · Physical Review Materials

High-temperature growth of ultra thin NbTiN films on lithium niobate for integrated single photon detection

Sjoerd Telkamp, Odiel Hooybergs, Myriam Rihani, Giovanni Finco, Tummas Napoleon Arge, Robin N. Dürr, Victor Mougel, D. Scheffler, Filip Křížek, Rachel Grange, Robert J. Chapman, W. Wegscheider

Published Jun 22, 2026• 0 citations
arXivHTMLPDF

Abstract

Lithium niobate-on-insulator (LNOI) is an emerging photonic platform with high potential for scalable quantum information processing due to its strong second-order nonlinearity. However, little progress has been made in developing on-chip single-photon detectors on LNOI. Niobium titanium nitride (NbTiN) superconducting nanowire single-photon detectors (SNSPDs) are a promising candidate for this application. In this work, we use DC reactive magnetron sputtering to grow high-quality NbTiN thin films using an ultrahigh vacuum deposition system with a base pressure lower than 2 × 10 − 10 mbar. Enabled by the low concentration of background impurities in this system, we investigate the impact of substrate temperature during NbTiN growth. We achieve four nm thick superconducting films with a critical temperature ( T c ) of 12.3 K grown at a substrate temperature of 825 K. We find that the NbTiN films grow in the (111) orientation and evolve from a porous pillar structure when grown at low temperatures to densely packed fibrous grains at higher temperatures. Furthermore, we demonstrate that the increased substrate temperature reduces the oxygen concentration in our films and improves the overall stoichiometry. In addition, we integrate these films with the LNOI platform and investigate the obtained interface quality. Lastly, we fabricate SNSPDs from the NbTiN film on LNOI and characterize the detector performance.

DOI
10.1103/r4xx-y1qj

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Lithium niobate-on-insulator (LNOI) is an emerging photonic platform with high potential for scalable quantum information processing due to its strong second-order nonlinearity. However, little progress has been made in developing on-chip single-photon detectors on LNOI. Niobium titanium nitride (NbTiN) superconducting nanowire single-photon detectors (SNSPDs) are a promising candidate for this application. In this work, we use DC reactive magnetron sputtering to grow high-quality NbTiN thin films using an ultrahigh vacuum deposition system with a base pressure lower than 2 × 10 − 10 mbar. Enabled by the low concentration of background impurities in this system, we investigate the impact of substrate temperature during NbTiN growth. We achieve four nm thick superconducting films with a critical temperature ( T c ) of 12.3 K grown at a substrate temperature of 825 K. We find that the NbTiN films grow in the (111) orientation and evolve from a porous pillar structure when grown at low temperatures to densely packed fibrous grains at higher temperatures. Furthermore, we demonstrate that the increased substrate temperature reduces the oxygen concentration in our films and improves the overall stoichiometry. In addition, we integrate these films with the LNOI platform and investigate the obtained interface quality. Lastly, we fabricate SNSPDs from the NbTiN film on LNOI and characterize the detector performance.
Lithium niobate-on-insulator (LNOI) is an emerging photonic platform with high potential for scalable quantum information processing due to its strong second-order nonlinearity. However, little progress has been made in developing on-chip single-photon detectors on LNOI. Niobium tita nium nitride (NbTiN) superconducting nanowire single-photon detectors (SNSPDs) are a promising candidate for this application. In this work, we use DC reactive magnetron sputtering to grow high quality NbTiN thin films using an ultra-high vacuum deposition system with a base pressure lower than 2×10‾¹⁰ mbar. Enabled by the low concentration of background impurities in this system, we investigate the impact of substrate temperature during NbTiN growth. We achieve four nm thick superconducting films with a critical temperature (Tc) of 12.3 K grown at a substrate temperature of 825 K. We find that the NbTiN films grow in the (111) orientation and evolve from a porous pillar structure when grown at low temperatures to densely packed fibrous grains at higher temper atures. Furthermore, we demonstrate that the increased substrate temperature reduces the oxygen concentration in our films and improves the overall stoichiometry. In addition, we integrate these films with the LNOI platform and investigate the obtained interface quality. Lastly, we fabricate SNSPDs from the NbTiN film on LNOI and characterize the detector performance.
We demonstrate an amorphous molybdenum–rhenium (MoRe) film on a thin-film lithium niobate substrate as an efficient superconducting nanowire single-photon detector (SNSPD) operating at T = 2.5 K. MoRe films were deposited by DC magnetron sputtering with a composite target of 56 at. % Mo and 44 at. % Re on lithium niobate on insulator substrates at room temperature. We investigated the spectral and temporal performance of MoRe SNSPDs as well as the detection regimes of one and multiple photons. The fabricated detector with a nanowire width of about 150 nm shows an internal detection efficiency of approximately 98% and 73.5% for the most crucial wavelengths for integration on the chip, 780 and 1550 nm, respectively. Our results show great potential for the use of MoRe for scalable and cryogenic tunable quantum photonic integrated circuits.
Niobium nitride (NbN) is widely used in the production of superconducting nanowire single-photon detectors (SNSPDs) due to its high superconducting transition temperature and suitable energy gap. The processing parameters used for the preparation of NbN films and the subsequent processing of nanowires have a significant effect on the performance of the SNSPD. In this review, we will present various thin film growth methods, including magnetron sputtering, atomic layer deposition (ALD), and chemical vapor deposition (CVD). The relationships between the superconducting performance of each thin film and the corresponding deposition process will be discussed. Subsequently, NbN nanowire fabrication methods and microstructures based on thin film etching will be summarized, and their impact on the qualities of the finished SNSPDs will be systematically analyzed. Finally, we will provide an outlook for the future development of preparation for SNSPD.
Lithium Niobate On Insulator (LNOI) has recently emerged as a promising platform for the realization of electro-optically reconfigurable waveguides combining small footprint and ultra-low propagation loss. Integration of these components with superconducting nanowire single photon detectors (SNSPDs) opens up the possibility to perform on-chip manipulation and detection of quantum states of light in a physically stable and scalable architecture. Here we report recent theoretical and experimental progress towards the realization of fast electro-optic modulators compatible with cryogenic temperatures and high-performance NbTiN superconducting nanowires single-photon detectors (SNSPDs) monolithically integrated in LNOI waveguides.
At the present time, ultrahigh performance superconducting nanowire single-photon detectors are the key elements in a variety of devices from biological research to quantum communications and computing. Accurate tuning of superconducting material properties is a powerful resource for fabricating single-photon detectors with desired properties. Here, we report on the major theoretical relations between ultrathin niobium nitride (NbN) film properties and superconducting nanowire single-photon detector characteristics, as well as the dependence of ultrathin NbN film properties on reactive magnetron sputtering recipes. Based on this study, we formulate the exact requirements for ultrathin NbN films for ultrahigh performance superconducting nanowire single-photon detectors. Then, we experimentally studied the properties of ultrathin NbN films (morphology, crystalline structure, critical temperature, and sheet resistance) on silicon, sapphire, silicon dioxide, and silicon nitride substrates sputtered with various recipes. We demonstrate ultrathin NbN films (obtained with more than 100 films deposition) with a wide range of critical temperature from 2.5 to 12.1 K and sheet resistance from 285 to 2000 Ω/sq and report a sheet resistance evolution of more than 40% within two years. Finally, we found out that one should use ultrathin NbN films with a specific critical temperature near 9.5 K and a sheet resistance of about 350 Ω/sq for ultrahigh performance state-of-the-art superconducting nanowire single-photon detectors at 1550 nm wavelength.