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arXiv:2509.04521 · IEEE Transactions on Applied Superconductivity

Self-Heating in SIS Mixers: Experimental Evidence and Theoretical Modeling

Wenlei Shan, Shohei Ezaki

Published Feb 26, 2026• 0 citations
arXivHTMLPDF

Abstract

This work investigates the relationship between self-heating and the characteristic features observed in the current–voltage characteristics (IVCs) of superconductor–insulator–superconductor (SIS) junctions. Finite-element analysis is employed to evaluate the steady-state temperature distribution around SIS junctions, explicitly accounting for the temperature dependence of the thermal conductivities of the constituent materials. This approach enables flexible estimation of self-heating under various practical conditions, such as different substrate materials, interfacial thermal resistances, and geometric layouts. A heating coefficient is extracted from the simulations and used as an input parameter for IVC modeling. Incorporating self-heating through temperature-dependent gap energy and gap broadening, the simulated IVCs reproduce bending features near the energy gap that agree with measured characteristics. Furthermore, when an unintended weak link, such as a fabrication-induced defect near a via hole, is present near an SIS junction, its critical current can be significantly reduced by junction heating, producing unexpected bends at the linear branch of measured IVCs. Conversely, such bends may serve as indicators that the junction temperature approaches the superconducting transition temperature.

DOI
10.1109/tasc.2026.3666524

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This work investigates the relationship between self-heating and the characteristic features observed in the current–voltage characteristics (IVCs) of superconductor–insulator–superconductor (SIS) junctions. Finite-element analysis is employed to evaluate the steady-state temperature distribution around SIS junctions, explicitly accounting for the temperature dependence of the thermal conductivities of the constituent materials. This approach enables flexible estimation of self-heating under various practical conditions, such as different substrate materials, interfacial thermal resistances, and geometric layouts. A heating coefficient is extracted from the simulations and used as an input parameter for IVC modeling. Incorporating self-heating through temperature-dependent gap energy and gap broadening, the simulated IVCs reproduce bending features near the energy gap that agree with measured characteristics. Furthermore, when an unintended weak link, such as a fabrication-induced defect near a via hole, is present near an SIS junction, its critical current can be significantly reduced by junction heating, producing unexpected bends at the linear branch of measured IVCs. Conversely, such bends may serve as indicators that the junction temperature approaches the superconducting transition temperature.
Theoretica and experimental research has been conducted to elucidate the basic physics behind the properties of superconductor-insulator-superconductor (SIS) tunnel junction receiving devices. The properties of an SIS mixer using a slightly nonideal junction, with finite LO power, were determined by analytic expansion of the equations of the quantum theory of mixing. The resulting equations have a particularly simple form. The minimum noise temperature is controlled by the leakage current of the junction. Even the most nearly ideal junctions made today require a considerable LO for best sensitivity; nevertheless, even a comparatively large leakage current allows mixer noise to be only a small factor above the quantum limit. The saturation properties of SIS mixers subjected to broad-band thermal noise obey the equations derived for monochromatic saturating signals. The Josephson junction tuning inductor was analyzed with the conclusion that such a device is not feasible with present fabrication techniques. Computer calculations using synthetic SIS junction I-V characteristics predicted the performance of an optimized receiver over its entire operating frequency range. Many aspects of the operation of SIS mixers were clarified and unexpected new phenomena were predicted. A 'photon picture' interpretation of the quantum theory of mixing is in the early stages ofmore » development. Niobium nitride edge junctions with excellent current-voltage characteristics were fabricated using novel barrier formation processes. The role of surface damage in the quality of NbN edge junction electrical characteristics was investigated and unexpected results were obtained.« less
Abstract : Theoretical and experimental research has been conducted to elucidate the basic physics behind the properties of superconductor-insulator-superconductor (SIS) tunnel junction receiving devices. The properties of an SIS mixer using a slightly nonideal junction, with finite LO power, were determined by analytic expansion of the equations of the quantum theory of mixing. The resulting equations have a particularly simple form. The minimum noise temperature is controlled by the leakage current of the junction. Even the most nearly ideal junctions made today require a considerable LO for best sensitivity; nevertheless, even a comparatively large leakage current allows mixer noise to be only a small factor above the quantum limit. The saturation properties of SIS mixers subjected to broad-band thermal noise obey the equations derived for monochromatic saturating signals. The Josephson junction tuning inductor was analyzed with the conclusion that such a device is not feasible with present fabrication techniques. Computer calculations using synthetic SIS junction I-V characteristics predicted the performance of an optimized receiver over its entire operating frequency range. Many aspects of the operation of SIS mixers were clarified and unexpected new phenomena were predicted. A 'photon picture' interpretation of the quantum theory of mixing is in the early stages of development. Niobium nitride edge junctions with excellent current-voltage characteristics were fabricated using novel barrier formation processes. The role of surface damage in the quality of NbN edge junction electrical characteristics was investigated and unexpected results were obtained.
We present a Verilog-A based compact model for the superconductor-insulator-superconductor (SIS) Josephson junction. The model can generate both hysteretic and non-hysteretic current-voltage (I-V) response for the SIS junctions utilizing the Stewart-McCumber parameter. We calibrate our model with different SIS samples and demonstrate accurate matching between the simulated and experimental results. We implement temperature effect on the energy gap and the critical current of the superconductor to explore the dynamic trends in device characteristics. We calculate the junction inductance and energy as functions of junction current and temperature. We simulate the read/write operations of an SIS junction based cryogenic memory cell to illustrate the usability of our model.
Abstract This study is devoted to the investigation of tunneling superconductor–insulator–superconductor (SIS) Josephson junctions with a new type of shunt based on an additional superconductor–insulator–normal metal (SIN) junction placed around the SIS junction. In the course of study, the parameters of such shunted junctions are numerically calculated and their current–voltage characteristics (IVC) are simulated. The designed structures are assembled in real samples and their parameters are studied; the IVC of junctions with different degrees of shunting are measured, and the behavior of these junctions under the influence of high-frequency signals in the subterahertz range is studied.
This work is devoted to the study of tunnel Josephson superconductor-insulator-superconductor (SIS) junctions with a new type of shunting based on the usage of an additional superconductor-insulator-normal metal (NIS) junction located around the SIS junction. Numerical calculations of the parameters of such shunted junctions were carried out and modeling of their IVC (current-voltage characteristics) was performed. The designed samples were manufactured, their parameters were studied. To investigate the behavior of junctions under the influence of high-frequency signals in the sub-THz range, their IVCs were measured. Keywords: Superconducting devices, superconductor-insulator-superconductor tunnel junction, Josephson effect, shunting of Josephson junctions.
In this paper, we present a method to measure the effective physical temperature of the tunnel junction in a terahertz superconductor-insulator-superconductor (SIS) mixer when illuminated with a strong local oscillator (LO) power that results in local hot spot around the tunnel junction. We observed that the gap voltage of the pumped current-voltage (IV) curve is suppressed when the LO pumping level is increased, indicating that the junction physical temperature is increased beyond the mixer block temperature. We quantified this extra heating effect by recovering the effective junction temperature through comparing the gap voltage of the pumped IV curves measured at a fixed block temperature, with the unpumped IV curve measured at varying block temperatures. We found that the heat trapped in the tunnel junction can be as high as 1.7 K when the mixer stabilised at 3.3 K is pumped at only 21% of the gap current.