Daniel Riedel, Teodoro Graziosi, Zhuoxian Wang, Chawina De-Eknamkul, Alex Abulnaga, Jonathan R. Dietz, Andrea Mucchietto, Michael Haas, Madison Sutula, Pierre Barral, Matteo Pompili, Mouktik Raha, Carsten Robens, J.C. Ha, Денис Дмитриевич Сукачев, David Levonian, Mihir K. Bhaskar, Matthew Markham, Bartholomeus Machielse
Many quantum networking applications require efficient photonic interfaces to quantum memories which can be produced at scale and with high yield. Synthetic diamond offers unique potential for the implementation of this technology as it hosts color centers which retain coherent optical interfaces and long spin coherence times in nanophotonic structures. Here, we report a technique enabling wafer-scale processing of thin-film diamond that combines ion implantation and membrane liftoff, high-quality overgrowth, targeted color center implantation, and serial, high-throughput thermocompression bonding with yields approaching unity. The deterministic deposition of thin diamond membranes onto semiconductor substrates facilitates consistent integration of photonic crystal cavities with silicon-vacancy (SiV) quantum memories. We demonstrate reliable, strong coupling of SiVs to photons with cooperativities approaching 50. Furthermore, we show that photonic crystal cavities can be reliably fabricated across several membranes bonded to the same handling chip. Our platform enables modular fabrication where the photonic layer can be integrated with functionalized substrates featuring electronic control lines such as coplanar waveguides for microwave delivery. Finally, we implement passive optical packaging with sub-decibel insertion loss. Together, these advances pave the way to the scalable assembly of optically addressable quantum memory arrays which are a key building block for modular photonic quantum interconnects.
Many quantum networking applications require efficient photonic interfaces to quantum memories which can be produced at scale and with high yield. Synthetic diamond offers unique potential for the implementation of this technology as it hosts color centers which retain coherent optical interfaces and long spin coherence times in nanophotonic structures. Here, we report a technique enabling wafer-scale processing of thin-film diamond that combines ion implantation and membrane liftoff, high-quality overgrowth, targeted color center implantation, and serial, high-throughput thermocompression bonding with yields approaching unity. The deterministic deposition of thin diamond membranes onto semiconductor substrates facilitates consistent integration of photonic crystal cavities with silicon-vacancy (SiV) quantum memories. We demonstrate reliable, strong coupling of SiVs to photons with cooperativities approaching 50. Furthermore, we show that photonic crystal cavities can be reliably fabricated across several membranes bonded to the same handling chip. Our platform enables modular fabrication where the photonic layer can be integrated with functionalized substrates featuring electronic control lines such as coplanar waveguides for microwave delivery. Finally, we implement passive optical packaging with sub-decibel insertion loss. Together, these advances pave the way to the scalable assembly of optically addressable quantum memory arrays which are a key building block for modular photonic quantum interconnects.
Efficient interfaces between optical photons and quantum bits are fundamental building blocks for quantum networks and large-scale quantum computers. We demonstrate an integrated platform for scalable quantum optics based on color centers coupled to diamond nanodevices. First, we incorporate nitrogen-vacancy (NV) centers in diamond into hybrid nanophotonic crystal cavities. Despite our progress towards coupling the NV to cavity photons, we find that the NV-cavity interface is limited by the imperfections of the color center's properties and its local environment. We approach this challenge first by characterizing and modifying the diamond surface to reduce the environmental noise affecting the NV optical transition. Subsequently, we develop a new approach that makes use of a quantum emitter with intrinsic protection from this noise: the silicon-vacancy (SiV) center in diamond. We demonstrate that SiV centers introduced through ion implantation feature highly coherent optical transitions, even inside nanostructures. By placing SiV centers inside all-diamond photonic crystal cavities, we achieve strong SiV-photon coupling with a cooperativity of greater than 20. Using this platform, we realize a quantum-optical switch controlled by the spin degree of freedom of a single SiV. By measuring intensity correlations of indistinguishable Raman photons emitted into a single waveguide, we observe a quantum interference effect resulting from the superradiant emission of two probabilistically entangled SiV centers. Finally, we demonstrate controllable photon-mediated interactions between the spin degrees of freedom of two cavity-coupled SiV centers. When the optical transitions of the two SiV centers are tuned into resonance, the coupling of each SiV to the common cavity mode results in a coherent interaction between the two SiVs, leading to the observation of super- and sub-radiant two-SiV states.
The realization of quantum networks capable of distributing quantum information over kilometer scale distances is key to maximizing the potential of quantum information technology. Implementing this technology requires both the ability to generate remote entanglement between quantum memory nodes, requiring an efficient spin-photon interface, and the ability to efficiently scale the classical optical control and multiplexing optics within a given node. In this work, we develop integrated photonics platforms in diamond and thin film lithium niobate to address both of these issues. Together, these platforms provide the necessary ingredients to create large scale quantum networking technology. For the quantum network nodes, we extend previous results combining diamond nanophotonic resonators with the silicon-vacancy defect as a quantum networking platform. We demonstrate, for the first time, quantum entanglement between SiV quantum memories across 35km in a deployed fiber network. We also develop additional functionalities within the SiV platform including the incorporation of deterministic strain to increase defect yield and deterministic single photon generation with the SiV. In order to enable the scalable control and multiplexing of individual SiV centers necessary for realizing practical quantum network nodes, we develop a state-of-the-art electro-optics platform operating at visible wavelengths using thin film lithium niobate. We develop an understanding of fabrication induced losses at visible wavelengths in the platform and a variety of key devices in the platform including high-bandwidth, low-drive voltage amplitude and phase modulators, as well as high-efficiency off chip couplers. Utilizing this platform we perform ultra-high efficiency electro-optic frequency shifting, achieving a 15 GHz frequency shift with over 50% efficiency. Finally, using our measured device performance, we discuss and model how these devices can effectively multiplex SiV-based quantum nodes. Thus through these two platforms we have demonstrated the necessary ingredients to realize large-scale quantum network nodes.
Integrated quantum photonics holds significant promise for scalable photonic quantum information processing, quantum repeaters, and quantum networks, but its development is hindered by the mismatch between materials hosting high-quality quantum emitters and those compatible with mature photonic technologies. Heterogeneous integration offers a potential solution to this challenge, yet practical implementations have been limited by inevitable insertion losses at material interfaces. Here, we present a self-aligned heterogeneous quantum photonic integration approach that can deterministically achieve near-unity coupling efficiency at the interface. To showcase our approach, we demonstrate Purcell enhancement of a silicon vacancy (SiV) center in diamond induced by a heterogeneous photonic crystal cavity defined by titanium dioxide (TiO2), as well as optical spin control and readout via a TiO2 photonic circuit. We further show that, when combined with inverse photonic design, our approach enables efficient and broadband collection of single photons from a color center into a heterogeneous waveguide. Our approach is not restricted to SiV centers or TiO2; it can be broadly applied to integrate diverse solid-state quantum emitters with thin-film photonic devices where conformal deposition is possible. Together, these results establish a practical route to scalable quantum photonic integrated circuits that combine high-quality quantum emitters with technologically mature photonic platforms.
Diamond has superlative material properties for a broad range of quantum and electronic technologies. However, heteroepitaxial growth of single crystal diamond remains limited, impeding integration and evolution of diamond-based technologies. Here, we directly bond single-crystal diamond membranes to a wide variety of materials including silicon, fused silica, sapphire, thermal oxide, and lithium niobate. Our bonding process combines customized membrane synthesis, transfer, and dry surface functionalization, allowing for minimal contamination while providing pathways for near unity yield and scalability. We generate bonded crystalline membranes with thickness as low as 10 nm, sub-nm interfacial regions, and nanometer-scale thickness variability over 200 by 200 μm2 areas. We measure spin coherence times T2 for nitrogen vacancy centers in 150 nm-thick bonded membranes of up to 623 ± 21 μs, suitable for advanced quantum applications. We demonstrate multiple methods for integrating high quality factor nanophotonic cavities with the diamond heterostructures, highlighting the platform versatility in quantum photonic applications. Furthermore, we show that our ultra-thin diamond membranes are compatible with total internal reflection fluorescence (TIRF) microscopy, which enables interfacing coherent diamond quantum sensors with living cells while rejecting unwanted background luminescence. The processes demonstrated herein provide a full toolkit to synthesize heterogeneous diamond-based hybrid systems for quantum and electronic technologies. Development of diamond-based quantum and electronic technologies requires heterogeneous integration, which has remained challenging. This work realizes direct bonding of single crystal diamond membranes to a broad range of technology-relevant substrates while maintaining quantum coherence for hosted qubits.
Diamond photonics has enabled efficient interfaces for quantum memories and is predicted to be a critical component of quantum networks. However, scalable network architectures require spatial, temporal, and spectral control of photons, which relies on nonlinear and electro-optic functionalities that diamond alone cannot provide. Here, we demonstrate heterogeneous integration of a thin-film lithium niobate (TFLN) platform, which has strong chi-2 nonlinearity and electro-optic effects, with thin diamond films. We demonstrate high-Q diamond photonic crystal cavities (Q factors exceeding 5x10^4 at 735 nm) that are lithographically aligned with TFLN photonic backbone and critically coupled to it. This allows us to realize low-loss diamond-TFLN "escalators" (loss ~1 dB/coupler) that support efficient light transfer between them. At cryogenic temperatures (5K), we can collect photons emitted from silicon vacancies (SiVs) embedded within the diamond structure via the TFLN photonic circuit. This approach establishes a scalable route toward integrated photonic circuits for practical quantum networking and other technologies.
Diamond has superlative material properties for a broad range of quantum and electronic technologies. However, heteroepitaxial growth of single crystal diamond remains limited, impeding integration and evolution of diamond-based technologies. Here, we directly bond single-crystal diamond membranes to a wide variety of materials including silicon, fused silica, sapphire, thermal oxide, and lithium niobate. Our bonding process combines customized membrane synthesis, transfer, and dry surface functionalization, allowing for minimal contamination while providing pathways for near unity yield and scalability. We generate bonded crystalline membranes with thickness as low as 10 nm, sub-nm interfacial regions, and nanometer-scale thickness variability over 200 by 200 μm2 areas. We measure spin coherence times T2 for nitrogen-vacancy centers in bonded membranes of up to 623(21) μs, suitable for advanced quantum applications. We demonstrate multiple methods for integrating high quality factor nanophotonic cavities with the diamond heterostructures, highlighting the platform versatility in quantum photonic applications. Furthermore, we show that our ultra-thin diamond membranes are compatible with total internal reflection fluorescence (TIRF) microscopy, which enables interfacing coherent diamond quantum sensors with living cells while rejecting unwanted background luminescence. The processes demonstrated herein provide a full toolkit to synthesize heterogeneous diamond-based hybrid systems for quantum and electronic technologies.