arXiv:2504.10349 · Physical Review Research
Trapping potentials and quantum gates for microwave-dressed Rydberg atoms on an atom chip
Iason Tsiamis, Georgios Doultsinos, Andreas F. Tzortzakakis, Manuel Kaiser, Dominik Jakab, Andreas Günther, József Fortágh, David Petrosyan
Abstract
Rydberg atoms in dc electric fields acquire static dipole moments. When the atoms are close to a surface producing an inhomogeneous electric field, such as by the adsorbates on an atom chip, depending on the sign of the dipole moment of the Rydberg-Stark eigenstate, the atoms may experience a force toward or away from the surface. We show that by applying a bias electric field and coupling a desired Rydberg state by a microwave field of proper frequency to another Rydberg state with opposite sign of the dipole moment, we can create a trapping potential for the atom at a prescribed distance from the surface. Perfectly overlapping trapping potentials for several Rydberg states can also be created by multicomponent microwave fields. A pair of such trapped Rydberg states of an atom can represent a qubit. Finally, we discuss an optimal realization of the SWAP gate between pairs of such atomic Rydberg qubits separated by a large distance but interacting with a common mode of a planar microwave resonator at finite temperature.