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arXiv:2503.12288 · Nature Communications

Strongly anharmonic flux-tunable transmon based on InAs-Al 2D heterostructure

Shukai Liu, Arunav Bordoloi, Jacob Issokson, Ido Levy, Maxim Vavilov, Javad Shabani, Vladimir Manucharyan

Published Dec 15, 2025• 1 citation
arXivHTMLPDF

Abstract

The gatemon qubits, made of transparent superconducting-semiconducting Josephson junctions, typically have even weaker anharmonicity than the opaque AlOx-junction transmons. However, flux-frustrated gatemons can acquire a much stronger anharmonicity, originating from the interference of the higher-order harmonics of the supercurrent. Here we investigate this effect of enhanced anharmonicity in split-junction gatemon devices based on InAs-Al 2D heterostructure. We find that anharmonicity in excess of 100% can be routinely achieved at the half-integer flux sweet-spot without any need for electrical gating or excessive sensitivity to the offset charge noise. We verified that such intrinsically large anharmonicity enables our devices to be driven coherently with raw Rabi frequencies exceeding 100 MHz, without any pulse shaping, simplifying implementation and control compared to traditional gatemons and transmons. Furthermore, by analyzing a relatively high-resolution spectroscopy of the device transitions as a function of flux, we were able to extract fine details of the current-phase relation, to which transport measurements would hardly be sensitive. The strong anharmonicity of our anharmonic tunable transmons, along with their bare-bones design, can prove to be a precious resource that transparent superconducting-semiconducting junctions bring to quantum information processing.

DOI
10.1038/s41467-025-67420-1

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The gatemon qubits, made of transparent superconducting-semiconducting Josephson junctions, typically have even weaker anharmonicity than the opaque AlOx-junction transmons. However, flux-frustrated gatemons can acquire a much stronger anharmonicity, originating from the interference of the higher-order harmonics of the supercurrent. Here we investigate this effect of enhanced anharmonicity in split-junction gatemon devices based on InAs-Al 2D heterostructure. We find that anharmonicity in excess of 100% can be routinely achieved at the half-integer flux sweet-spot without any need for electrical gating or excessive sensitivity to the offset charge noise. We verified that such intrinsically large anharmonicity enables our devices to be driven coherently with raw Rabi frequencies exceeding 100 MHz, without any pulse shaping, simplifying implementation and control compared to traditional gatemons and transmons. Furthermore, by analyzing a relatively high-resolution spectroscopy of the device transitions as a function of flux, we were able to extract fine details of the current-phase relation, to which transport measurements would hardly be sensitive. The strong anharmonicity of our anharmonic tunable transmons, along with their bare-bones design, can prove to be a precious resource that transparent superconducting-semiconducting junctions bring to quantum information processing.
Gatemons are superconducting qubits resembling transmons, with a gate-tunable semiconducting weak link as the Josephson element. Here, we report a gatemon device featuring an aluminum microwave circuit on a Ge/SiGe heterostructure embedding a Ge quantum well. Owing to the superconducting proximity effect, the high-mobility two-dimensional hole gas confined in this well provides a gate-tunable superconducting weak link between two Al contacts. We perform Rabi oscillation and Ramsey interference measurements, demonstrate the gate-voltage dependence of the qubit frequency, and measure the qubit anharmonicity. We find relaxation times T 1 up to 119 ns, and Ramsey coherence times T 2 * up to 70 ns, and a qubit frequency gate-tunable over 3.5 GHz. The reported proof-of-concept reproduces the results of a very recent work [Sagi et al. Nat. Commun. 2024, 15, 6400] using similar Ge/SiGe heterostructures, thereby validating a novel platform for the development of gatemons and parity-protected cos(2ϕ) qubits.
The anharmonicity of a transmon qubit, defined as the difference in energy level spacing, is a key design parameter. In transmons built from hybrid superconductor-semiconductor Josephson elements, the anharmonicity is tunable with gate voltages that control both the Josephson energy and the weak link transparency. In Sn-InAs nanowire transmons, we use two-tone microwave spectroscopy to extract anharmonicity ranging in absolute value from the transmon charging energy EcE_cEc​ to values smaller than Ec/10E_c/10Ec​/10. This behavior contrasts with the predictions of the multi-channel short-junction model, which sets a lower limit on anharmonicity at Ec/4E_c/4Ec​/4. Coherent operation of the qubit is still possible at the point of the lowest anharmonicity. These findings demonstrate the potential of quantum circuits that benefit from widely electrically tunable anharmonicity.
Split transmons have been widely used in making quantum processors for building scalable and fault-tolerant superconducting quantum computers. With tunable external flux threading the superconducting quantum interference devices (SQUIDs) of qubits, split transmons have a degree of freedom for tuning frequencies but introduce flux noise as an important dephasing factor at the same time. Here, an improved version of a transmon is proposed and is called a ``triple-Josephson-junction transmon'' (tri-JJ transmon). A tri-JJ transmon is obtained by shunting another Josephson junction to the SQUID of a split transmon, which can produce much more different local minima and maxima of qubit frequencies tuned by external flux as ``sweet spots'' than those of split transmons. The first-order effect of the flux noise at the sweet spots can be eliminated and the corresponding pure-dephasing times are estimated as about $200\phantom{\rule{4pt}{0ex}}\textmu{}\mathrm{s}$ by considering only critical current noise. Tri-JJ transmons are compatible with the process and the protocol of control and measurement of split transmons and can be competitive candidates for constructing a high-performance superconducting quantum processor.
Superconducting qubit based on superconducting circuits consist of a superconducting capacitor and a Josephson junction with the transmon geometry is extensively used in advanced quantum processors, pursuing scalable quantum computing. The tuning of the qubit frequency of the transmon relies on magnetic flux-dependent interference between the supercurrents of two superconductor-insulator-superconductor (S-I-S) Josephson junctions in a superconducting loop. Josephson junction based on superconductor-semiconductor-superconductor (S-Sm-S) materials opens up a possibility to the gate-tunable transmon, referred to as the "gatemon", in which the qubit frequency can be tuned by electrostatic mean. Recent realizations of gatemons on III-V material platforms show impressive development on the alternative to the transmon, yet still leave a big question on the scalability. The silicon-germanium (SiGe) heterostructure is one of the potential platforms to host hybrid devices due to its high hole mobility and the low Schottky barrier at the Ge-metal interface. Additionally, the compatibility with the silicon-based semiconductor industry is a capable advantage for the scaling-up qubit platform.In this thesis, we develop gatemons based on the Al-Ge-Al Josephson junction in the SiGe heterostructure. Firstly, the robust fabrication recipe, found on a top-down approach, for Josephson Field Effect Transistors (JoFETs) is established. We perform measurements exhaustively on the JoFETs to study their properties as a function of the gate voltage, temperature, and magnetic field. The devices show gate-tunability of the critical current and the normal state resistance . The devices are estimated to have a high-transparency superconductor-semiconductor interface, as demonstrated by the high product on the SiGe heterostructure. In the finite-voltage regime, the features corresponded to multiple Andreev reflections (MARs) are observed. Then, we fabricate and characterize niobium nitride (NbN) superconducting resonators on SiGe heterostructure. We measure the resonators in the transmission mode and extract the resonant frequency , internal quality factor, and coupling quality factor from the transmission coefficient. Following that, we develop the fabrication process to integrate Al-Ge-Al junctions shunted with capacitors, or, in other words, gatemon, into the resonator scheme and perform the fabrication according to the design. We demonstrate the anticrossing feature in one of the fabricated gatemons. The resonant frequency of the gatemon is mapped using the two-tone spectroscopy technique and is found to be gate-tunable. The qubit has large spectral linewidth, implying a low coherence time. Additionally, we conduct the current-phase relationship (CPR) measurement on the junctions in the Superconducting QUantum Interference Device (SQUID) geometry. We can demonstrate that the junctions pose non-sinusoidal CPR. Further, the integer and half-integer Shapiro steps are observed in the current-voltage characteristic curves of irradiated junctions. This indicates that our junctions have the element, which can open up another possibility toward protected qubits.
Coherent operation of gate-voltage-controlled hybrid transmon qubits (gatemons) based on semiconductor nanowires was recently demonstrated. Here we experimentally investigate the anharmonicity in epitaxial InAs-Al Josephson junctions, a key parameter for their use as a qubit. Anharmonicity is found to be reduced by roughly a factor of 2 compared to conventional metallic junctions and dependent on gate voltage. Experimental results are consistent with a theoretical model, indicating that Josephson coupling is mediated by a small number of highly transmitting modes in the semiconductor junction.
Tunable Josephson harmonics open new avenues for qubit design. We demonstrate a superconducting circuit element consisting of a tunnel junction in series with a SQUID loop, yielding a Josephson potential whose harmonic content is strongly tunable by magnetic flux. Through spectroscopy of the first four qubit transitions, together with an effective single-mode model renormalized by the internal mode, we resolve a second harmonic with an amplitude up to ∼10%\sim10\%∼10% of the fundamental. We identify a flux sweet spot where the dispersive shift vanishes, achieved by balancing the dispersive couplings to the internal and qubit modes. This highly tunable element provides a route toward protected qubits and customizable nonlinear microwave devices.