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arXiv:2503.09539

Spectral properties of disordered insulating lattice under nonlinear electric field

Kunal Mozumdar, Herbert F. Fotso, Jong E. Han

Published Mar 12, 2025• 0 citations
arXivHTMLPDF

Abstract

Quenched disorder in a solid state system can result in Anderson localization, where electrons are exponentially localized and the system behaves like an insulator. By solving exactly a disordered electronic lattice model out of equilibrium, we investigate the effect of a DC electric field on Anderson localization in an open system, and provide a minimal platform to study disorder-nonequilibrium interplay in electronic lattice systems. We perform steady-state Keldysh Green's function calculations on an infinite lattice with a finite-range of disorder-active region that are coupled to fermion reservoirs. Our solutions out of a fully electronic model verify Mott's temperature scaling of the variable-range-hopping transport and the Lifshitz tail, well-corroborated by the coherent-potential approximation. We further reveal that a nonequilibrium electronic lattice creates a statistical evolution that shows a counterintuitive shift of the distribution edge in the opposite direction of the band edge. The rich evolution of non-thermal statistics highlights the importance of an explicit band structure and the impurity correlations in strong nonequilibrium theories.

DOI
10.48550/arxiv.2503.09539

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Quenched disorder in a solid state system can result in Anderson localization, where electrons are exponentially localized and the system behaves like an insulator. By solving exactly a disordered electronic lattice model out of equilibrium, we investigate the effect of a DC electric field on Anderson localization in an open system, and provide a minimal platform to study disorder-nonequilibrium interplay in electronic lattice systems. We perform steady-state Keldysh Green's function calculations on an infinite lattice with a finite-range of disorder-active region that are coupled to fermion reservoirs. Our solutions out of a fully electronic model verify Mott's temperature scaling of the variable-range-hopping transport and the Lifshitz tail, well-corroborated by the coherent-potential approximation. We further reveal that a nonequilibrium electronic lattice creates a statistical evolution that shows a counterintuitive shift of the distribution edge in the opposite direction of the band edge. The rich evolution of non-thermal statistics highlights the importance of an explicit band structure and the impurity correlations in strong nonequilibrium theories.
An exact formalism for calculating the retarded and advanced Green's functions of strongly correlated lattice models in a uniform electric field is derived within dynamical mean-field theory. To illustrate the method, we solve for the nonequilibrium density of states of the Hubbard model in both the metallic and Mott-insulating phases at half-filling (with an arbitrary strength electric field) by employing the approximate numerical renormalization group as the impurity solver. This general approach can be applied to any strongly correlated lattice model in the limit of large dimensions.
We characterize the current-carrying nonequilibrium steady state (NESS) in a single-band Hubbard model confronted with a static electric field in the presence of quenched disorder. Beyond the linear response regime, the electric field amplitude must compensate for at least half of the band gap to have a non-negligible stationary current. As the disorder is not expected to dissipate the extra energy injected by the field, optical phonons assisted by a fermionic heat bath serve as dissipation channels for the current-induced Joule heat generated by the accelerated electrons. The NESS of the system is addressed employing the dynamical mean-field theory using the so-called auxiliary master equation approach as impurity solver. Disorder effects are treated locally via the coherent potential approximation (CPA) and the self-consistent Born (SCB) approach. In the regime in which the two schemes yield similar results, we employ the SCB as it is computationally cheaper than the CPA. We show that, in a purely electronic setup, the disorder-induced dephasing cannot contribute states within the gap but only smear out the edges of the Hubbard bands. When phonons are taken into account, the different nature of disorder-induced dephasing and phonon-related dissipation becomes clear. We show that although both disorder and electron-phonon interaction enhance the current at off-resonant fields, disorder effects play a marginal role since they cannot provide in-gap states which are instead brought about by phonons and represent the privileged relaxation pathway for excited electrons.
The interplay between Mott and Anderson routes to localization in disordered interacting systems gives rise to different transitions and transport regimes. Here, we investigate the phase diagram at finite temperatures using dynamical mean-field theory combined with typical medium theory, which is an effective theory of the Mott-Anderson metal-insulator transition. We mainly focus on the properties of the coexistence region associated with the Mott phase transition. For weak disorder, the coexistence region is found to be similar to that in the clean case. However, as we increase disorder, Anderson localization effects are responsible for shrinking the coexistence region, and at sufficiently strong disorder (approximately equal to twice the bare bandwidth) it drastically narrows, the critical temperature Tc{T}_{c}Tc​ abruptly goes to zero, and we observe a phase transition in the absence of a coexistence of the metallic and insulating phases. In this regime, the effects of interaction and disorder are found to be of comparable importance for charge localization.
We study the interplay of disorder localization and strong local interactions within the Anderson-Hubbard model. Taking into account local Mott-Hubbard physics and static screening of the disorder potential, the system is mapped onto an effective single-particle Anderson model, which is studied within the self-consistent theory of electron localization. For fermions, we find rich nonmonotonic behavior of the localization length ξ, particularly in two-dimensional systems, including an interaction-induced exponential enhancement of ξ for small and intermediate disorders and a strong reduction of ξ due to hopping suppression by strong interactions. In three dimensions, we identify for half filling a Mott-Hubbard-assisted Anderson localized phase existing between the metallic and the Mott-Hubbardgapped phases. For small U there is re-entrant behavior from the Anderson localized phase to the metallic phase. For bosons, the unrestricted particle occupation number per lattice site yields a monotonic enhancement of ξ as a function of decreasing interaction, which we assume to persist until the superfluid Bose- Einstein condensate phase is entered. Besides, we study cold atomic gases expanding, by a diffusion process, in a weak random potential. We show that the density-density correlation function of the expanding gas is strongly affected by disorder and we estimate the typical size of a speckle spot, i.e., a region of enhanced or depleted density. Both a Fermi gas and a Bose-Einstein condensate (in a mean-field approach) are considered.
We discuss a nonequilibrium dynamical mean-field framework for simulating inhomogeneous Hubbard models with local disorders. Our approach treats electron interactions and disorders on equal footing, by considering only local dynamical fluctuations. The theory reduces to nonequilibrium dynamical mean-field theory in the presence of only electron-electron interactions and to the coherent potential approximation in noninteracting systems with disorders. Both time-dependent and steady-state problems are treated by implementing the theory on the three-branch Kadanoff-Baym contour and two-branch Schwinger-Keldysh contour, respectively. Benchmarks on a eight-site cube show that the method yields rather accurate spectral functions in both the weakly and strongly interacting regimes. In a cubic lattice, we demonstrate energy conservation after an interaction quench and thermalization after just a few hopping times in both clean and disordered systems. As an application, we study transport through a serial double quantum-dot sandwiched between two leads, focusing on the current and dot occupations after a voltage quench.
We characterize the response of a Mott insulating system to a static electric field in terms of its conducting and spectral properties. Dissipation is included by a coupling to fermionic baths and to either optical or acoustic phonons. This paper extends and completes the analysis made in a previous work by the authors [Mazzocchi et al., Phys. Rev. B 106, 125123 (2022)]. In the present work, phonons are included diagrammatically within the Migdal approximation by also including self-consistency from the electronic feedback. The nonequilibrium steady state is addressed by means of the dynamical mean-field theory based on the nonequilibrium Green's function approach, while the so-called auxiliary master equation approach is employed as impurity solver. With optical phonons the self-consistency suppresses the steady-state current for field strengths comparable to the band gap with respect to the non-self-consistent case. This is due to the interaction of phonons with the hot electrons of the lattice which increases their temperature, thus providing a less effective relaxation channel for the current-induced Joule heat. In addition, in the case of optical phonons, the results are essentially independent of the temperature of the fermionic baths, as the latter is sensibly smaller than their characteristic frequency. On the other hand, with acoustic phonons the steady-state current is slightly suppressed by the self-consistent treatment only at field strengths close to half of the gap and especially at very small phonon frequency. Also, in this case, the results seem to slightly depend on the temperature of the fermionic baths.