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arXiv:2501.09788 · Applied Physics Letters

Large-range tuning and stabilization of the optical transition of diamond tin-vacancy centers by in situ strain control

Julia M. Brevoord, Leonardo G. C. Wienhoven, Nina Codreanu, Tetsuro Ishiguro, Elvis van Leeuwen, Mariagrazia Iuliano, Lorenzo De Santis, Christopher Waas, Hans K. C. Beukers, Tim Turan, Carlos Errando-Herranz, Kenichi Kawaguchi, Ronald Hanson

Published Apr 28, 2025• 12 citations
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Abstract

The negatively charged tin-vacancy (SnV−) center in diamond has emerged as a promising platform for quantum computing and quantum networks. To connect SnV− qubits in large networks, in situ tuning and stabilization of their optical transitions are essential to overcome static and dynamic frequency offsets induced by the local environment. Here, we report on the large-range optical frequency tuning of diamond SnV− centers using micro-electro-mechanically mediated strain control in photonic integrated waveguide devices. We realize a tuning range of >40 GHz, covering a major part of the inhomogeneous distribution. In addition, we employ real-time feedback on the strain environment to stabilize the resonance frequency and mitigate spectral wandering. These results provide a path for on-chip scaling of diamond SnV-based quantum networks.

DOI
10.1063/5.0251211

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The negatively charged tin-vacancy (SnV−) center in diamond has emerged as a promising platform for quantum computing and quantum networks. To connect SnV− qubits in large networks, in situ tuning and stabilization of their optical transitions are essential to overcome static and dynamic frequency offsets induced by the local environment. Here, we report on the large-range optical frequency tuning of diamond SnV− centers using micro-electro-mechanically mediated strain control in photonic integrated waveguide devices. We realize a tuning range of >40 GHz, covering a major part of the inhomogeneous distribution. In addition, we employ real-time feedback on the strain environment to stabilize the resonance frequency and mitigate spectral wandering. These results provide a path for on-chip scaling of diamond SnV-based quantum networks.
Solid state quantum emitters are a leading platform for photonic quantum networking with memory nodes. However, the inhomogeneous distribution of quantum emitters, as well as several environmental factors (i.e. strain and electric fields) spread the frequency spectrum of the qubits, making them distinguishable and therefore not a reliable resource for distributed quantum entanglement. In this paper, we demonstrate a full-stack approach to integrating nearly indistinguishable tin vacancy (SnV−^-−) quantum emitters on a frequency-tunable photonic interposer that overcomes the native distribution and static variation of quantum emitters for an indistinguishable photonic quantum networking platform. We demonstrate a silicon nitride-on-insulator photonic integrated circuit (PIC) with accompanying multiphysics digital twin (MPhDT) that guides discovery of SnV−^-− strain-tuning parameters and informs construction of a multi-channel quantum repeater node. On this node, we achieve the first simultaneous demonstration of spectral tuning of the zero phonon line (ZPL) at GHz scale; coherent electron spin control with gate times of <80<80<80 ns; strongly- and weakly-coupled nuclear spin detection; and commercial fiber array-coupled readout of a SnV−^-− center. Finally, we propose and simulate improvements to the architecture that achieve 99.96% connectivity of $ N \sim 1000$ emitters spanning the inhomogeneous distribution of SnV−^-− centers in strained diamond, where distributed quantum entanglement may be realized.
Robust spin-photon interfaces in solids are essential components in quantum networking and sensing technologies. Ideally, these interfaces combine a long-lived spin memory, coherent optical transitions, fast and high-fidelity spin manipulation, and straightforward device integration and scaling. The tinvacancy center (SnV) in diamond is a promising spin-photon interface with desirable optical and spin properties at 1.7 K. However, the SnV spin lacks efficient microwave control, and its spin coherence degrades with higher temperature. In this work, we introduce a new platform that overcomes these challenges—SnV centers in uniformly strained thin diamond membranes. The controlled generation of crystal strain introduces orbital mixing that allows microwave control of the spin state with 99.36(9)% gate fidelity and spin coherence protection beyond a millisecond. Moreover, the presence of crystal strain suppresses temperature-dependent dephasing processes, leading to a considerable improvement of the coherence time up to 223(10) μs at 4 K, a widely accessible temperature in common cryogenic systems. Critically, the coherence of optical transitions is unaffected by the elevated temperature, exhibiting nearly lifetime-limited optical linewidths. Combined with the compatibility of diamond membranes with device integration, the demonstrated platform is an ideal spin-photon interface for future quantum technologies.
Integrating solid-state quantum emitters with photonic circuits is essential for realizing large-scale quantum photonic processors. Negatively charged tin-vacancy (SnV – ) centers in diamond have emerged as promising candidates for quantum emitters because of their excellent optical and spin properties, including narrow-linewidth emission and long spin coherence times. SnV – centers need to be incorporated in optical waveguides for efficient on-chip routing of the photons they generate. However, such integration has yet to be realized. In this Letter, we demonstrate the coupling of SnV – centers to a nanophotonic waveguide. We realize this device by leveraging our recently developed shallow ion implantation and growth method for the generation of high-quality SnV – centers and the advanced quasi-isotropic diamond fabrication technique. We confirm the compatibility and robustness of these techniques through successful coupling of narrow-linewidth SnV – centers (as narrow as 36 ± 2 MHz) to the diamond waveguide. Furthermore, we investigate the stability of waveguide-coupled SnV – centers under resonant excitation. Our results are an important step toward SnV – -based on-chip spin-photon interfaces, single-photon nonlinearity, and photon-mediated spin interactions.
Group-IV color centers in diamond are promising candidates for quantum networks due to their dominant zero-phonon line and symmetry-protected optical transitions that connect to coherent spin levels. The negatively charged tin-vacancy (SnV) center possesses long electron spin lifetimes due to its large spin-orbit splitting. However, the magnetic dipole transitions required for microwave spin control are suppressed, and strain is necessary to enable these transitions. Recent work has shown spin control of strained emitters using microwave lines that suffer from Ohmic losses, restricting coherence through heating. We utilize a superconducting coplanar waveguide to measure SnV centers subjected to strain, observing substantial improvement. A detailed analysis of the SnV center electron spin Hamiltonian based on the angle-dependent splitting of the ground and excited states is performed. We demonstrate coherent spin manipulation and obtain a Hahn echo coherence time of up to T 2 = 430 μ s . With dynamical decoupling, we can prolong coherence to T 2 = 10 ms , about a sixfold improvement compared to earlier works. We also observe a nearby coupling C 13 spin, which may serve as a quantum memory, thus substantiating the potential of SnV centers in diamond and demonstrates the benefit of superconducting microwave structures. Published by the American Physical Society 2024
Robust spin-photon interfaces in solids are essential components in quantum networking and sensing technologies.Ideally, these interfaces combine a long-lived spin memory, coherent optical transitions, fast and high-fidelity spin manipulation, and straightforward device integration and scaling.The tinvacancy center (SnV) in diamond is a promising spin-photon interface with desirable optical and spin properties at 1.7 K.However, the SnV spin lacks efficient microwave control, and its spin coherence degrades with higher temperature.In this work, we introduce a new platform that overcomes these challenges-SnV centers in uniformly strained thin diamond membranes.The controlled generation of crystal strain introduces orbital mixing that allows microwave control of the spin state with 99.36(9)% gate fidelity and spin coherence protection beyond a millisecond.Moreover, the presence of crystal strain suppresses temperature-dependent dephasing processes, leading to a considerable improvement of the coherence time up to 223ð10Þ μs at 4 K, a widely accessible temperature in common cryogenic systems.Critically, the coherence of optical transitions is unaffected by the elevated temperature, exhibiting nearly lifetime-limited optical linewidths.Combined with the compatibility of diamond membranes with device integration, the demonstrated platform is an ideal spin-photon interface for future quantum technologies.