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arXiv:2409.14735

Phonon Dephasing, Entanglement and Exchange-Only Toffoli Gate Sequence in Quantum Dot Spin Chains

Guanjie He

Published Sep 23, 2024• 0 citations
arXivHTMLPDF

Abstract

The quantum dot spin chain system is vital for quantum simulation and studying collective electron behaviors, necessitating an understanding of its mechanisms and control protocols. Chapter 1 introduces key concepts, focusing on the extended Hubbard model, double quantum dot systems, and electron-phonon coupling. Chapter 2 explores electron-phonon coupling in multielectron double quantum dots under unbiased and biased scenarios via detuning variations. In the unbiased case, dephasing due to electron-phonon coupling generally increases with more electrons in the right dot; this trend is inconsistent in the biased case, suggesting potential advantages of multielectron quantum dots under certain conditions. Chapter 3 investigates entanglement entropy in a multielectron quantum dot spin chain described by the extended Hubbard model. Local and pairwise entanglement are influenced by Coulomb interactions, tunneling strengths, electronic configurations, and site potential energies. The entanglement diagram reveals phase transitions significantly impacted by coupling strength ratios and potential energy variations; adjusting the potential energy of a specific dot critically influences ground state configurations and entanglement entropy. Chapter 4, inspired by the decoherence-free subspace concept, explores operation sequences in a nine-spin, nine-quantum-dot system defined by the Heisenberg model, with bases determined by total angular momentum quantum numbers. Employing the Krotov method of quantum optimal control, we identify a more efficient pulse-level operation sequence for an exchange-only quantum dot spin chain, offering a superior alternative to conventional quantum gate decomposition and potentially enhancing the development of more concise quantum algorithm representations.

DOI
10.48550/arxiv.2409.14735

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The quantum dot spin chain system is vital for quantum simulation and studying collective electron behaviors, necessitating an understanding of its mechanisms and control protocols. Chapter 1 introduces key concepts, focusing on the extended Hubbard model, double quantum dot systems, and electron-phonon coupling. Chapter 2 explores electron-phonon coupling in multielectron double quantum dots under unbiased and biased scenarios via detuning variations. In the unbiased case, dephasing due to electron-phonon coupling generally increases with more electrons in the right dot; this trend is inconsistent in the biased case, suggesting potential advantages of multielectron quantum dots under certain conditions. Chapter 3 investigates entanglement entropy in a multielectron quantum dot spin chain described by the extended Hubbard model. Local and pairwise entanglement are influenced by Coulomb interactions, tunneling strengths, electronic configurations, and site potential energies. The entanglement diagram reveals phase transitions significantly impacted by coupling strength ratios and potential energy variations; adjusting the potential energy of a specific dot critically influences ground state configurations and entanglement entropy. Chapter 4, inspired by the decoherence-free subspace concept, explores operation sequences in a nine-spin, nine-quantum-dot system defined by the Heisenberg model, with bases determined by total angular momentum quantum numbers. Employing the Krotov method of quantum optimal control, we identify a more efficient pulse-level operation sequence for an exchange-only quantum dot spin chain, offering a superior alternative to conventional quantum gate decomposition and potentially enhancing the development of more concise quantum algorithm representations.
We investigate the entanglement properties in semiconductor quantum dot systems modeled by the extended Hubbard model, focusing on the impacts of potential energy variations and electron interactions within a four-site quantum dot spin chain. Our study explores local and pairwise entanglement across configurations with electron counts N=4 and N=6, under different potential energy settings. By adjusting the potential energy in specific dots and examining the entanglement across various interaction regimes, we identify significant variations in the ground states of quantum dots. We extend this analysis to larger systems with L=6 and L=8, comparing electron counts N=L and N=L+2, revealing sharper entanglement transitions and reduced finite-size effects as the system size increases. Our results show that local potential shifts and the Coulomb interaction strength lead to notable redistributions of the electron configurations in the quantum dot spin chain, significantly affecting the entanglement properties. These changes are depicted in phase diagrams that highlight entanglements' dependencies on the interaction strengths and potential energy adjustments, illustrating complex entanglement dynamics shifts triggered by interdot interactions.
Semiconductor quantum dot systems offer a promising platform for quantum computation. And these quantum computation candidates are normally based on spin or charge properties of electrons. In these systems, we focus on quantum computation based on electron spins since these systems has good scalability, long coherence times, and rapid gate operations. And this thesis focuses on building a theoretical description of quantum dot systems and the link between theory and experiments. In many quantum dot systems, exchange interactions are the primary mechanism used to control spins and generate entanglement. And exchange energies are normally positive, which limits control flexibility. However, recent experiments show that negative exchange interactions can arise in a linear three-dot system when a two-electron double quantum dot is exchange coupled to a larger quantum dot containing on the order of one hundred electrons. The origin of this negative exchange can be traced to the larger quantum dot exhibiting a spin triplet-like rather than singlet-like ground state. Here we show using a microscopic model based on the configuration interaction (CI) method that both triplet-like and singlet-like ground states are realized depending on the number of electrons. In the case of only four electrons, a full CI calculation reveals that triplet-like ground states occur for sufficiently large dots. These results hold for symmetric and asymmetric quantum dots in both Si and GaAs, showing that negative exchange interactions are robust in few-electron double quantum dots and do not require large numbers of electrons. Recent experiments also show the potential to utilize large quantum dots to mediate superexchange interaction and generate entanglement between distant spins. This opens up a possible mechanism for selectively coupling pairs of remote spins in a larger network of quantum dots. Taking advantage of this opportunity requires a deeper understanding of how to control superexchange interactions in these systems. Here, we consider a triple-dot system arranged in linear and triangular geometries. We use CI calculations to investigate the interplay of superexchange and nearest-neighbor exchange interactions as the location, detuning, and electron number of the mediating dot are varied. We show that superexchange processes strongly enhance and increase the range of the net spin-spin exchange as the dots approach a linear configuration. Furthermore, we show that the strength of the exchange interaction depends sensitively on the number of electrons in the mediator. Our results can be used as a guide to assist further experimental efforts towards scaling up to larger, two-dimensional quantum dot arrays.
Since the development of microsized devices is moving forward at enormous speed, there is huge amount of new industrial opportunities. However such devices also require high precision and understanding of the operating of their constituent parts up to the quantum level. The device of the purely quantum nature being developed so far is quantum computer. However the physical realization of it is still not performed, as the requirements for it are very rigorous. \n \nIn the pioneering work by Loss and DiVincenzo it was suggested to use a spin of electron placed in a quantum dot as an information qubit. Following this work the study of electron or hole spin qubits developed. Both experimental and theoretical tools for studying them greatly advanced. \n \nIn the first part of the thesis we study the phonon-induced decoherence and relaxation of singlet-triplet qubits in the double quantum dots. First of all we consider AlGaAs/GaAs double quantum dots. The important result we present here is the strong dephasing that occurs at large detuning. This dephasing is due to two-phonon process that affects mainly singlet state of the qubit and consequently changes the splitting between singlet and triplet leading to dephasing. Remarkably at small detuning this dephasing process is suppressed and the decoherence time is by orders of magnitude longer than in case of large detuning and is mainly defined by one-phonon process. We also present the dependence of relaxation time and decoherence time on the strength of spin-orbit interaction and different directions of the system. Our results provide a deeper insight into the recently obtained experimental data. \n \nWe also studied Si/SiGe quantum dots as a potential candidate for a qubit. Apart from the absence of hyperfine interaction and bulk spin-orbit interaction in the isotopically purified 28^{28}28Si, its electron-phonon interaction is different from GaAs that also leads to longer qubit lifetimes. We study SSS-T−T_-T−​ qubit near the anticrossing of the basis states. This particular region is interesting due to possibilities in operating the qubit. We show that the type of singlet plays a crucial role, i.e. whether it is a singlet with each dot singly occupied or a singlet with only one dot doubly occupied. Depending on the type of singlet the qubit lifetimes change by several orders of magnitude. We also study the influence of a micromagnet, usually used in experiments to operate the qubit, on the relaxation time and decoherence time and present the regime where its effect is negligible. We suggest how to test experimentally our theory of one-phonon and two-phonon processes separately. We also show how the relaxation and decoherence time depend on different system parameters for SSS-T0T_0T0​ qubits. \n \nThe second part of the thesis is devoted to the other important constituent part of microsized devices, namely nanowires. We are interested in the dynamic of polarization of localized spins in the nanowires, as it can affect such important device characteristics as e.g. conductance. \n \nWe studied Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction-induced polarization in the nanowire in case when the voltage is applied to it. It was already proposed theoretically that in the ground state the localized spins in 1D systems align in a helix due to RKKY interaction. This polarization is still present until some critical temperature. The presence of such polarization acts as a spin filter for electrons, that most likely affects the conductance of the nanowire. Therefore we studied how this helical polarization changes when the voltage is applied. The key result is the appearance of the uniform polarization perpendicular to the helix plane, that occurs due to backscattering of electrons that is accompanied by flip-flop process with localized spins. When this uniform polarization is formed, the helix starts to rotate as a whole around the direction of the uniform polarization. We present the dependence of polarization of the localized spins on temperature and voltage. Remarkably the uniform polarization grows both with voltage and temperature in the given range of parameters. \n \nWe also considered the electron-induced relaxation of the nuclear spins. As the electron spins and nuclear spins interact via hyperfine interaction, the nuclear relaxation time reflects some properties of electron bath. Namely, we see a strong dependence of nuclear relaxation time on spin-orbit interaction strength. We present here the dependence of the nuclear relaxation time on the external magnetic field and chemical potential of the wire, that can be experimentally varied via gate. The dependences for the strong spin-orbit interaction and for the weak one are substantially different. Moreover, they have distinct peaks, that allow to get the value of spin-orbit interaction amplitude with the high precision.
A quantitative description of the exchange interaction in quantum dots is relevant for modeling gate operations of spin qubits. By measuring the amplitude and frequency of exchange-driven qubit state oscillations, we measure the detuning dependence of the exchange coupling in a GaAs double quantum dot over three orders of magnitude. Both 1D and 3D full configuration interaction simulations can replicate the observed behavior. Extending a Hubbard model by including excited states increases the range of detuning where it provides a good fit, thus elucidating the underlying physics.
Quantum-mechanical correlations of interacting fermions result in the emergence of exotic phases.Magnetic phases naturally arise in the Mott-insulator regime of the Fermi-Hubbard model, where charges are localized and the spin degree of freedom remains.In this regime, the occurrence of phenomena such as resonating valence bonds, frustrated magnetism, and spin liquids is predicted.Quantum systems with engineered Hamiltonians can be used as simulators of such spin physics to provide insights beyond the capabilities of analytical methods and classical computers.To be useful, methods for the preparation of intricate many-body spin states and access to relevant observables are required.Here, we show the quantum simulation of magnetism in the Mott-insulator regime with a linear quantum-dot array.We characterize the energy spectrum for a Heisenberg spin chain, from which we can identify when the conditions for homogeneous exchange couplings are met.Next, we study the multispin coherence with global exchange oscillations in both the singlet and triplet subspace of the Heisenberg Hamiltonian.Last, we adiabatically prepare the low-energy global singlet of the homogeneous spin chain and probe it with two-spin singlettriplet measurements on each nearest-neighbor pair and the correlations therein.The methods and control presented here open new opportunities for the simulation of quantum magnetism benefiting from the flexibility in tuning and layout of gate-defined quantum-dot arrays.
Abstract Recent studies reveal that a double‐quantum‐dot system hosting more than two electrons may be superior in certain aspects as compared to the traditional case in which only two electrons are confined (a singlet–triplet qubit). The electron–phonon dephasing occurring in a GaAs multi‐electron double‐quantum‐dot system is studied, in a biased case in which the singlet state is hybridized, as well as in an unbiased case in which the hybridization is absent. It is found that while the electron–phonon dephasing rate increases with the number of electrons confined in the unbiased case, this does not hold in the biased case. A merit figure is defined as a ratio between the exchange energy and the dephasing rate, and have shown that in experimentally relevant range of the exchange energy, the merit figure actually increases with the number of electrons in the biased case. The results show that the multi‐electron quantum‐dot system has another advantage in mitigating the effect of electron–phonon dephasing, which is previously under‐appreciated in the literature.