Quantum noise limits the sensitivity of optical measurements, but squeezed states of light enable quantum-enhanced metrology, sensing, and information processing. Most on-chip squeezed-light sources rely on Kerr (
χ(3)) nonlinearities, remain limited by pump power and excess loss constraints. Quadratic (
χ(2)) platforms instead provide stronger parametric interactions, lower pump power requirements, and greater spectral engineering flexibility. Here, we demonstrate strong, broadband squeezed-light generation on a thin-film lithium niobate (TFLN) photonic chip using a dual-resonant optical parametric amplifier implemented in a single periodically poled LN (PPLN) microresonator. Near-full-depth domain inversion is achieved simultaneously with highly over-coupled resonances, exhibiting escape efficiencies exceeding 90% and intrinsic quality factors above 2.5 million in a 0.6 mm
2 X-cut TF-PPLN resonator, enabling efficient squeezing at 1587 nm when pumped at 793.5 nm. Operating in the continuous-wave regime, we directly measure -0.81 dB of squeezing below the shot-noise limit with a pump power of 27 mW, together with +4.29 dB of anti-squeezing. From these measurements, we infer an on-chip squeezing level of -7.52 dB
± 0.22 dB (95% confidence interval: [-7.96,-7.10] dB), and an on-chip anti-squeezing level of +9.62 dB
± 0.25 dB. We demonstrate single-mode squeezing at degeneracy with a squeezed-light spectrum exceeding 10.3 THz. This work reports the highest squeezing ratio among integrated
χ(2) cavity platforms and the first quasi-phase matched, fully resonant
χ(2) cavity squeezer on chip, establishing a scalable route to fully integrated power-efficient squeezed-light sources for quantum-enhanced sensing and metrology.
Squeezed states of light play a key role in quantum-enhanced sensing and continuous-variable quantum information processing. Realizing integrated squeezed light sources is crucial for developing compact and scalable photonic quantum systems. In this work, we demonstrate on-chip broadband vacuum squeezing at telecommunication wavelengths on the thin-film lithium niobate (TFLN) platform. Our device integrates periodically poled lithium niobate (PPLN) nanophotonic waveguides with low-loss edge couplers, comprising bilayer inverse tapers and an SU-8 polymer waveguide. This configuration achieves a fiber-to-chip coupling loss of 1.4 dB and a total homodyne detection loss of 4.0 dB, enabling a measured squeezing level of 1.4 dB. Additional measurements in a more efficient PPLN waveguide (without low-loss couplers) infer an on-chip squeezing level of approximately 10 dB at a pump power of 62 mW. These results underscore the potential of TFLN platform for efficient and scalable squeezed light generation.
Abstract Quantum noise limits the sensitivity of optical measurements, but squeezed states of light enable quantum-enhanced metrology, sensing, and information processing. Most on-chip squeezed-light sources rely on Kerr (χ(3)) nonlinearities, remain limited by pump power and excess loss constraints. Quadratic (χ(2)) platforms instead provide stronger parametric interactions, lower pump power requirements, and greater spectral engineering flexibility. Here, we demonstrate strong, broadband squeezed-light generation on a thin-film lithium niobate (TFLN) photonic chip using a dual-resonant optical parametric amplifier implemented in a single periodically poled LN (PPLN) microresonator. Near-full-depth domain inversion is achieved simultaneously with highly over-coupled resonances, exhibiting escape efficiencies exceeding 90% and intrinsic quality factors above 2.5 million in a 0.6mm2 X-cut TF-PPLN resonator, enabling efficient squeezing at 1587nm when pumped at 793.5 nm. Operating in the continuous-wave regime, we directly measure −0.81 dB of squeezing below the shot-noise limit with a pump power of 27mW, together with +4.29 dB of anti-squeezing. From these measurements, we infer an on-chip squeezing level of −7.52 dB±0.22 dB (95% confidence interval: [−7.96,−7.10] dB), and an on-chip anti-squeezing level of +9.62 dB±0.25 dB . We demonstrate single-mode squeezing at degeneracy with a squeezed-light spectrum exceeding 10.3 THz. This work reports the highest squeezing ratio among integrated χ(2) cavity platforms and the first quasi-phase matched, fully resonant χ(2) cavity squeezer on chip, establishing a scalable route to fully integrated power-efficient squeezed-light sources for quantum-enhanced sensing and metrology.
Scalable generation of nonclassical light sources on an integrated platform is a key requirement for photonic quantum information processing. In particular, realizing multiple indistinguishable squeezed light sources on a single chip is an essential step toward continuous-variable quantum computing. Here, we demonstrate the fabrication of two indistinguishable and independently controllable optical parametric oscillators on a thin-film lithium niobate (TFLN) platform. The device design focuses on reproducibility, independent tunability, and compatibility with larger telecom-wavelength continuous-variable photonic circuits. We observe up to 0.5 dB of directly measured squeezing below the shot-noise level from each source. By interfering the two modes on a beam splitter, we generate an EPR-type two-mode squeezed state and verify continuous-variable entanglement through violation of the Duan-Simon inseparability criterion. This is the first demonstration of two independently tunable squeezed-light sources on a single TFLN chip and their use for generating continuous-variable entanglement.
Photonic quantum computers are currently one of the primary candidates for fault-tolerant quantum computation. At the heart of the photonic quantum computation lies the strict requirement for suitable quantum sources e.g. high purity, high brightness single photon sources. To build a practical quantum computer, thousands to millions of such sources are required. In this article, we theoretically propose a unique single-photon source design on a thin-film lithium niobate (TFLN) platform co-integrated with superconducting nanowire single-photon detectors. We show that with a judicial design of single photon source using thin film periodically poled lithium waveguides (PPLN), back-illuminated grating couplers (GCs) and directly bonded or integrated cavity coupled superconducting nanowire single-photon detectors (SNSPDs) can lead to a simple but practical high efficiency heralded single-photon source using the current fabrication technology. Such a device will eliminate the requirement of out coupling of the generated photons and can lead to a fully integrated solution. The proposed design can be useful for fusion-based quantum computation and for multiplexed single photon sources and also for efficient on-chip generation and detection of squeezed light.
Mid-infrared quantum light sources hold broad application prospects in fields such as gas sensing and infrared thermal imaging. However, currently used mid-infrared quantum entangled light sources primarily rely on bulk periodically poled lithium niobate (PPLN) crystals, which limits brightness and integration. This paper proposes a theoretical scheme based on lithium niobate thin films, in which 1556.9 nm pumping is used to generate entangled photon pairs with a central wavelength of 3113.8 nm. By optimizing the waveguide structure and periodic polarization design, type-II phase matching and group velocity matching are achieved. This enables transverse electric (TE)-polarized pump input to be down converted to generate photon pairs with TE and transverse magnetic (TM) polarizations. Furthermore, by combining a domain arrangement algorithm used for the customized design of polarization direction in PPLN waveguides, precise phase matching is achieved, resulting in a quantum light source with a purity as high as 0.999 and a brightness of 6.18
×106 cps/mW, which is three orders of magnitude higher than that of the bulk PPLN crystal source. This study provides a promising solution for realizing high-brightness, high-purity on-chip quantum light sources in the mid-infrared band.