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arXiv:2407.08157 · Applied Physics Letters

Two-level system loss: Significant not only at millikelvin

Wenlei Shan, Shohei Ezaki

Published Sep 9, 2024• 3 citations
arXivHTMLPDF

Abstract

Tow-level system (TLS) loss in amorphous dielectric materials has been intensively studied at millikelvin temperatures due to its impact on superconducting qubit devices and incoherent detectors. However, the significance of TLS loss in superconducting transmission lines at liquid helium temperatures remains unclear. This study investigates TLS loss in amorphous SiO2 at liquid helium temperatures (about 4 K) within a frequency range of 130–170 GHz, using niobium microstrip and coplanar waveguide resonators. Our results demonstrate notable power and temperature dependence of dielectric loss, with the dielectric loss and quasiparticle loss exchanging dominance at around 4 K. These findings are consistent with TLS models and provide crucial insight for the design of superconducting devices operating at liquid helium temperatures.

DOI
10.1063/5.0226792

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Tow-level system (TLS) loss in amorphous dielectric materials has been intensively studied at millikelvin temperatures due to its impact on superconducting qubit devices and incoherent detectors. However, the significance of TLS loss in superconducting transmission lines at liquid helium temperatures remains unclear. This study investigates TLS loss in amorphous SiO2 at liquid helium temperatures (about 4 K) within a frequency range of 130–170 GHz, using niobium microstrip and coplanar waveguide resonators. Our results demonstrate notable power and temperature dependence of dielectric loss, with the dielectric loss and quasiparticle loss exchanging dominance at around 4 K. These findings are consistent with TLS models and provide crucial insight for the design of superconducting devices operating at liquid helium temperatures.
Abstract Superconducting low-loss transmission line resonators are crucial for various applications, including quantum computation and photon detection in submillimeter and far-infrared astronomy. Their performance is sensitive to both their geometry and material, with energy dissipation mainly due to two-level systems (TLS) located in amorphous dielectrics. This paper presents a lab-on-chip experiment to measure the TLS losses of sputtered SiO x and AlO x films in superconducting Nb coplanar waveguide (CPW) resonators at sub-Kelvin temperatures. Different CPW geometries are adopted for these experiments. The measurement results provide quantitative insights into TLS contributions in superconducting resonators, providing empirical evidence for material screening and circuit design.
We have investigated both the temperature and the power dependence of microwave losses for various dielectrics commonly used as substrates for the growth of High critical Temperature Superconductor thin films. We present measurement of niobium superconducting λ/2λ/2λ/2 coplanar waveguide resonators, fabricated on La0.3Sr0.7Al0.65Ta0.35O3La_{0.3}Sr_{0.7}Al_{0.65}Ta_{0.35}O_3La0.3​Sr0.7​Al0.65​Ta0.35​O3​ (LSAT), MgOMgOMgO (MgO) and LaAlO3LaAlO_3LaAlO3​ (LAO), at the millikelvin temperature range and at low input power. By comparing our results with the Two-Level System (TLS) model, we have discriminated among different dominant loss mechanisms. LSAT has shown the best results as regards the dielectric losses in the investigated regimes.
Superconducting quantum devices have gained increasing interest over the past 15 years because of their role as promising candidates for implementing a large-scale quantum computer and as ultra-sensitive detectors. Superconducting resonators are one type of superconducting device which are used in a variety of applications including quantum computing and radioastronomy. They can achieve large quality factors which are important for these applications and a variety of others. Specific examples of these applications include the readout and coupling of superconducting qubits and also microwave kinetic inductance detector arrays for sub-mm wavelength astronomical measurements. High quality factors also enable the study of very subtle features in the electromagnetic response of the resonator. This feature in turn offers provides a method to characterize loss mechanisms which affect the performance of superconducting qubits, by measuring the quality factor of a resonator. Dielectric loss is an example of such a loss mechanism, and is considered to be one of, if not \\it the \\rm major obstacle to overcome in order to construct scalable quantum technologies based on superconducting devices. This type of loss arises from the coupling of the electric field in the device to spurious degrees of freedom which arise naturally the dielectric environment of the device. The fast-growing interest in the physics and applications of superconducting resonators has renewed interest in an improving our fundamental understanding of dielectric loss. This interest involves the study of a much bigger and older question in condensed matter physics; namely, what is the microscopic physics which governs the behaviour and of an amorphous material at low-temperatures? \n \nIn this thesis, we present a systematic study of dielectric loss in amorphous aluminum oxide using superconducting microwave resonators. Measurements of the intrinsic loss tangent over a large temperature range of 40~mK to 1~K are presented and analyzed in detail. Some aspects of the data are well understood in terms of the standard tunnelling two-level system model, while others require a deeper analysis of the electrodynamics of the resonator and insights from more advanced theories. We employ a consistent approach using numerical simulations of the resonator to understand loss mechanisms arising from both an inhomogeneous electric field and multiple dielectric layers. We measure saturation effects which provide insight into coherent properties of two-level system ensembles and the mutual interaction between them. Excellent agreement with the two-level system model is found for intrinsic losses, however the strong dependence on temperature which we observe for saturation effects is not predicted in the standard form of the model. We find that this dependence can be understood in terms of the theory of spectral diffusion which is consistent with a strong mutual interaction between two-level systems contributes to broadening of their spectral linewidths.
Measuring the internal quality factor of coplanar waveguide superconducting resonators is an established method of determining small losses in superconducting devices. Often, resonator losses are attributed to two-level system (TLS) defects using a power dependent model for the quality factor. However, excess non-equilibrium quasiparticles can also limit the quality factor of superconducting resonators. Here, a two-temperature, power and temperature dependent model is used to evaluate resonator losses for titanium nitride and aluminum coplanar waveguide resonators with loss tangents of 10−5–10−6. This model enables a set of parameters to describe both the internal quality factor and fractional frequency shift of the resonator across a broad range of average cavity photon numbers, from 1 to 106, and temperatures between those limited by the experimental apparatus near 50 mK and thermal quasiparticle dominated. The presented model also offers potential insight into observing the temperature and power dependence of TLS–TLS interactions in these resonators.
The improvement of the coherence times of superconducting qubits depends on the reduction of the dielectric losses in the insulating materials implemented for the device fabrication. These losses depend on the density of spurious dipoles of different nature (two-level systems, TLSs) which couple to phase qubits and, hence, limit their coherence times. Hydrogenated amorphous silicon (a-Si:H), because of its lower loss tangent (tan δ) among conventional dielectrics (a-SiO, a-SiO2, a-SiNx:H), is considered as the best amorphous dielectric for superconducting qubit application. We have developed a reliable method for the direct measurement of dielectric losses in amorphous dielectric thin films using a novel design based on four lumped superconducting LC resonators connected in series without coupling capacitors. The losses are obtained as tan δ = 1/Q0, where Q0 is the intrinsic quality factor of the resonator, measured at 3 dB above the resonance frequency without any fitting procedure. The series type LC resonators with a-Si:H as dielectric were fabricated by the Nb technology. The measurements were done at the conditions of a qubit application (0.5 -10 GHz frequency range and low temperatures). The low values of the loss tangent of a-Si:H (up to 2.5 x 10−5 at 4.2 K) have required the development of superconducting housing for the resonators in order to eliminate a spurious dependence of tan δ on the microwave power, by reducing losses which were not originated in the dielectric itself. The results of the simulations agree well with the experiments.
Two-level systems (TLS) are an important, if not dominant, source of loss and noise for superconducting resonators such as those used in kinetic inductance detectors and some quantum information science platforms. They are similarly important for loss in photolithographically fabricated superconducting mm-wave/THz transmission lines. For both lumped-element and transmission-line structures, native amorphous surface oxide films are typically the sites of such TLS in nonmicrostripline geometries, while loss in the (usually amorphous) dielectric film itself usually dominates in microstriplines. We report here on the demonstration of low TLS loss at GHz frequencies in hydrogenated amorphous silicon (a-Si:H) films deposited by plasma-enhanced chemical vapor deposition in superconducting lumped-element resonators using parallel-plate capacitors (PPCs). The values we obtain from two recipes in different deposition machines, $7\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}6}$ and $12\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}6}$, improve on the best achieved in the literature by a factor of 2--4 for a-Si:H and are comparable to recent measurements of amorphous germanium. Moreover, we have taken care to extract the true zero-temperature, low-field loss tangent of these films, accounting for temperature and field saturation effects that can yield misleading results. Such robustly fabricated and characterized films render the use of PPCs with deposited amorphous films a viable architecture for superconducting resonators and they also promise extremely low loss and high quality factor for photolithographically fabricated superconducting mm-wave/THz transmission lines used in planar antennas and resonant filters.