We study the effects of an orbital magnetic field on the Mott metal-insulator transition in the Hubbard-Hofstadter model. We demonstrate that sufficiently large magnetic fields induce a Mott insulator-to-metal phase transition supporting our claim with dynamical mean field theory (DMFT) numerical results. For both competing phases (metal and insulator) we observe a magnetic-field-induced metallization reflected in an enhancement of kinetic and potential energy. The kinetic energy of the Mott insulator increases due to the Aharonov-Bohm effect experienced by electrons virtually tunneling around an elementary plaquette which is, however, suppressed by strong correlations. The kinetic energy of the metallic phase, on the other hand, is more strongly affected by the magnetic field through a field-driven redistribution of spectral weight due to the formation of magnetic minibands. This leads to an increase of the kinetic energy which tends to stabilize the metallic state. Our theoretical results might be relevant for recent experimental studies on magnetic field driven insulator-to-metal transitions in strongly correlated materials such as VO_{2}, λ-type organic conductors, and moiré multilayers.
We study the effects of an orbital magnetic field on the Mott metal-insulator transition in the Hubbard-Hofstadter model. We demonstrate that sufficiently large magnetic fields induce a Mott insulator-to-metal phase transition supporting our claim with dynamical mean field theory (DMFT) numerical results. For both competing phases (metal and insulator) we observe a magnetic-field-induced metallization reflected in an enhancement of kinetic and potential energy. The kinetic energy of the Mott insulator increases due to the Aharonov-Bohm effect experienced by electrons virtually tunneling around an elementary plaquette which is, however, suppressed by strong correlations. The kinetic energy of the metallic phase, on the other hand, is more strongly affected by the magnetic field through a field-driven redistribution of spectral weight due to the formation of magnetic minibands. This leads to an increase of the kinetic energy which tends to stabilize the metallic state. Our theoretical results might be relevant for recent experimental studies on magnetic field driven insulator-to-metal transitions in strongly correlated materials such as VO_{2}, λ-type organic conductors, and moiré multilayers.
Abstract: The metal–insulator transition (MIT) constitutes one of the most profound and persistent problems in condensed matter physics, sitting at the intersection of electronic structure theory, many-body physics, and emergent quantum phenomena. Conventional band theory, which successfully classifies materials as metals or insulators according to the filling of their electronic bands, fails dramatically when confronted with a class of compounds transition metal oxides chief among them that ought to be metallic by band-counting arguments yet are robustly insulating in the laboratory. The resolution of this paradox required abandoning the independent-electron picture entirely and recognizing that strong Coulomb repulsion between electrons can, by itself, drive localization. This insight, formalized by Mott and later distilled into the Hubbard model, established correlation-driven insulation as a phenomenon distinct from band insulation. The present paper offers a theoretical exploration of the MIT problem, tracing its conceptual development from the Mott criterion through the Hubbard Hamiltonian, the Brinkman–Rice scenario of quasiparticle mass divergence, and the watershed development of dynamical mean-field theory (DMFT), which rendered the Mott transition quantitatively tractable for the first time. We argue that the competition between the electronic bandwidth and the on-site interaction encoded in the ratio U/W provides the unifying organizing principle for the field. Building toward the modern frontier, we examine how the Mott transition connects to quantum phase transitions and quantum criticality, where zero-temperature instabilities governed by quantum rather than thermal fluctuations produce non-Fermi-liquid behavior and anomalous scaling. Case studies of vanadium oxides, rare-earth nickelates, and doped cuprates illustrate the diversity and subtlety of real correlated materials. We conclude that the MIT remains a central and unresolved problem whose continued study is increasingly entangled with the development of quantum materials and quantum technologies. Keywords: Metal–Insulator Transition; Mott Insulator; Strongly Correlated Electrons; Hubbard Model; DMFT; Quantum Criticality; Quantum Materials; Condensed Matter Physics
We investigate a quarter-filled two-band Hubbard model involving a crystal-field splitting, which lifts the orbital degeneracy as well as an interorbital hopping (interband hybridization). Both terms are relevant to the realistic description of correlated materials such as transition-metal oxides. The nature of the Mott metal-insulator transition is clarified and is found to depend on the magnitude of the crystal-field splitting. At large values of the splitting, a transition from a two-band to a one-band metal is first found as the on-site repulsion is increased and is followed by a Mott transition for the remaining band, which follows the single-band (Brinkman-Rice) scenario well documented previously within dynamical mean-field theory. At small values of the crystal-field splitting, a direct transition from a two-band metal to a Mott insulator with partial orbital polarization is found, which takes place simultaneously for both orbitals. This transition is characterized by a vanishing of the quasiparticle weight for the majority orbital but has a first-order character for the minority orbital. It is pointed out that finite-temperature effects may easily turn the metallic regime into a bad metal close to the orbital polarization transition in the metallic phase.
Quantum materials exhibit a rich dynamic of physical parameters, which, when combined, can lead to entirely different behaviors. These parameters constantly compete with each other, with the most influential parameters determining the state of the system. For example, in the case of metal–insulator transitions, electron–electron interactions compete with the kinetic energy of the electrons and disorder. Understanding these complex dynamics is crucial for both fundamental physics and the development of novel technological applications, particularly given the role of disorder in tuning critical temperatures, a property with significant potential benefit in the fabrication of new devices where temperature requirements are still the bottleneck. In this article, properties of the Mott metal–insulator transition within disordered electron systems are explored using the disordered Hubbard model, the simplest Hamiltonian for capturing the metal–insulator transition. The model solutions are obtained using the self-consistent statistical dynamical mean-field theory (statDMFT). statDMFT incorporates local electronic correlation effects while allowing for Anderson localization due to disorder.
The single-orbital Hubbard model is often a good description of the low energy dynamics of strongly correlated electron systems. Importantly, the single-orbital Hubbard model at half-filling is able to capture the Mott metal-insulator transition that occurs in many materials. However, there are insulating phases (as well as other exotic phases) that occur due to strong electronic correlations in materials that are away from half-filling. In many cases, these additional phases occur because the constituent electrons of the material come from multi-orbital atomic environments that require more complicated descriptions such as the multi-orbital Hubbard model. In other cases, as we show in this thesis, the rich phase diagram arises from the underlying lattice because of special geometric features.For example, decorated lattices, which often occur in organometallics (e.g., metal-organic frameworks (MOFs)), have geometrical complexity due to the molecular structures that decorate the lattice. We argue that the effective description for many of these materials is the single-orbital Hubbard model. Yet, these materials still have rich phase diagrams because the molecular structures of the material cause effective multi-orbital interactions generated from the local Coulomb interaction.We investigate the single-orbital Hubbard model on the decorated honeycomb lattice at zero temperature using rotationally invariant slave-boson (RISB) theory in the mean-field approximation, at a range of fillings. Numerous metal-insulator transitions occur - the insulating phases include a real-space Mott insulator, a dimer Mott insulator, a trimer Mott insulator, flat-band ferromagnets, and a spin-1 Mott insulator, dominated by spin-triplet fluctuations. This menagerie of phases is caused by effective multi-orbital interactions arising from the interplay of electronic correlations, lattice structure, and band filling effects. For example, with only on-site Coulomb interactions, the spin-1 Mott insulator is driven by an effective Hund's coupling on a three-site ring that favors the formation of triplets when the three-site ring has four electrons. We argue that this exotic phase may be realized in layers of the organometallic molecular crystal Mo3S7(dmit)3.
We investigate the metal-to-insulator phase transition driven by the density-density electronic interaction in the quarter-filled model on a cubic lattice with two orbitals split by a crystal field. We show that a systematic consideration of the non-local collective electronic fluctuations strongly affects the picture of the phase transition provided by the dynamical mean field theory. Our calculations reveal the appearance of metallic and Mott insulating states characterised by the same density but different values of the chemical potential, which is missing in the local approximation to electronic correlations. We find that the region of concomitant metastability of these two solutions is remarkably broad in terms of the interaction strength. It starts at a critical value of the interaction slightly larger than the bandwidth and extends to more than twice the bandwidth, where the two solutions merge into a Mott insulating phase. Our results illustrate that non-local correlations can have crucial consequences on the electronic properties in the strongly correlated regime of the simplest multi-orbital systems.
The DOS, the dynamic (optical) conductivity, and the phase diagram of a strongly correlated and strongly disordered paramagnetic Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT + Σ approximation). Strong correlations are taken into account by the DMFT, and disorder is taken into account via an appropriate generalization of the self-consistent theory of localization. The DMFT effective single-impurity problem is solved by a numerical renormalization group (NRG); we consider the three-dimensional system with a semielliptic DOS. The correlated metal, Mott insulator, and correlated Anderson insulator phases are identified via the evolution of the DOS and dynamic conductivity, demonstrating both the Mott-Hubbard and Anderson metal-insulator transition and allowing the construction of the complete zero-temperature phase diagram of the Anderson-Hubbard model. Rather unusual is the possibility of a disorder-induced Mott insulator-to-metal transition.