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arXiv:2406.09002 · PRX Quantum

Gatemonium: A Voltage-Tunable Fluxonium

William M. Strickland, Bassel Heiba Elfeky, Lukas Baker, Andrea Maiani, Jaewoo Lee, Ido Levy, Jacob Issokson, Andrei Vrajitoarea, Javad Shabani

Published Feb 10, 2025• 13 citations
arXivHTMLPDF

Abstract

We present a new style of fluxonium qubit, gatemonium, based on an all-superconductor-semiconductor hybrid platform. The linear inductance is achieved using 600 planar Al - In As Josephson junctions (JJs) in series. By tuning the single junction with a gate voltage, we demonstrate electrostatic control of the effective Josephson energy, tuning the weight of the fictitious phase particle. One- and two-tone spectroscopy of the gatemonium transitions further reveal details of the hybrid plasmon-fluxon spectrum. Accounting for the nonsinusoidal current-phase relation of the single junction, we fit the measured spectra to extract charging and inductive energies. We conduct time-domain characterization of the plasmon modes and find that energy-relaxation times are limited by inductive loss, possibly in the thin aluminum film. We discuss future directions for this platform in gate-voltage-tunable high-plasma-frequency enhanced-impedance junction arrays, and enhanced coherence times for voltage-tunable architectures.

DOI
10.1103/prxquantum.6.010326

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We present a new style of fluxonium qubit, gatemonium, based on an all-superconductor-semiconductor hybrid platform. The linear inductance is achieved using 600 planar Al - In As Josephson junctions (JJs) in series. By tuning the single junction with a gate voltage, we demonstrate electrostatic control of the effective Josephson energy, tuning the weight of the fictitious phase particle. One- and two-tone spectroscopy of the gatemonium transitions further reveal details of the hybrid plasmon-fluxon spectrum. Accounting for the nonsinusoidal current-phase relation of the single junction, we fit the measured spectra to extract charging and inductive energies. We conduct time-domain characterization of the plasmon modes and find that energy-relaxation times are limited by inductive loss, possibly in the thin aluminum film. We discuss future directions for this platform in gate-voltage-tunable high-plasma-frequency enhanced-impedance junction arrays, and enhanced coherence times for voltage-tunable architectures.
Gate-tunable transmons (gatemons) employing semiconductor Josephson junctions have recently emerged as building blocks for hybrid quantum circuits. In this study, we present a gatemon fabricated in planar Germanium. We induce superconductivity in a two-dimensional hole gas by evaporating aluminum atop a thin spacer, which separates the superconductor from the Ge quantum well. The Josephson junction is then integrated into an Xmon circuit and capacitively coupled to a transmission line resonator. We showcase the qubit tunability in a broad frequency range with resonator and two-tone spectroscopy. Time-domain characterizations reveal energy relaxation and coherence times up to 75 ns. Our results, combined with the recent advances in the spin qubit field, pave the way towards novel hybrid and protected qubits in a group IV, CMOS-compatible material.
Superconducting qubit based on superconducting circuits consist of a superconducting capacitor and a Josephson junction with the transmon geometry is extensively used in advanced quantum processors, pursuing scalable quantum computing. The tuning of the qubit frequency of the transmon relies on magnetic flux-dependent interference between the supercurrents of two superconductor-insulator-superconductor (S-I-S) Josephson junctions in a superconducting loop. Josephson junction based on superconductor-semiconductor-superconductor (S-Sm-S) materials opens up a possibility to the gate-tunable transmon, referred to as the "gatemon", in which the qubit frequency can be tuned by electrostatic mean. Recent realizations of gatemons on III-V material platforms show impressive development on the alternative to the transmon, yet still leave a big question on the scalability. The silicon-germanium (SiGe) heterostructure is one of the potential platforms to host hybrid devices due to its high hole mobility and the low Schottky barrier at the Ge-metal interface. Additionally, the compatibility with the silicon-based semiconductor industry is a capable advantage for the scaling-up qubit platform.In this thesis, we develop gatemons based on the Al-Ge-Al Josephson junction in the SiGe heterostructure. Firstly, the robust fabrication recipe, found on a top-down approach, for Josephson Field Effect Transistors (JoFETs) is established. We perform measurements exhaustively on the JoFETs to study their properties as a function of the gate voltage, temperature, and magnetic field. The devices show gate-tunability of the critical current and the normal state resistance . The devices are estimated to have a high-transparency superconductor-semiconductor interface, as demonstrated by the high product on the SiGe heterostructure. In the finite-voltage regime, the features corresponded to multiple Andreev reflections (MARs) are observed. Then, we fabricate and characterize niobium nitride (NbN) superconducting resonators on SiGe heterostructure. We measure the resonators in the transmission mode and extract the resonant frequency , internal quality factor, and coupling quality factor from the transmission coefficient. Following that, we develop the fabrication process to integrate Al-Ge-Al junctions shunted with capacitors, or, in other words, gatemon, into the resonator scheme and perform the fabrication according to the design. We demonstrate the anticrossing feature in one of the fabricated gatemons. The resonant frequency of the gatemon is mapped using the two-tone spectroscopy technique and is found to be gate-tunable. The qubit has large spectral linewidth, implying a low coherence time. Additionally, we conduct the current-phase relationship (CPR) measurement on the junctions in the Superconducting QUantum Interference Device (SQUID) geometry. We can demonstrate that the junctions pose non-sinusoidal CPR. Further, the integer and half-integer Shapiro steps are observed in the current-voltage characteristic curves of irradiated junctions. This indicates that our junctions have the element, which can open up another possibility toward protected qubits.
Superconducting qubit based on superconducting circuits consist of a superconducting capacitor and a Josephson junction with the transmon geometry is extensively used in advanced quantum processors, pursuing scalable quantum computing. The tuning of the qubit frequency of the transmon relies on magnetic flux dependent interference between the supercurrents of two superconductor-insulator superconductor(S-I-S) Josephson junctions in a superconducting loop. Josephson junction based on superconductor-semiconductor-superconductor (S-Sm-S) materialsopens up a possibility to the gate-tunable transmon, referred to as the "gatemon", in which the qubit frequency can be tuned by electrostatic mean. Recent realizations of gatemons on III-V material platforms show impressive development on the alternative to the transmon, yet still leave a big question on the scalability. The silicon-germanium (SiGe) heterostructure is one of the potential platforms to host hybrid devices due to its high hole mobility and the low Schottky barrier at the Ge-metal interface. Additionally, the compatibility with the silicon-based semiconductor industry is a capable advantage for the scaling-up qubit platform.In this thesis, we develop gatemons based on the Al-Ge-Al Josephson junction in the SiGe heterostructure. Firstly, the robust fabrication recipe, found on a top down approach, for Josephson Field Effect Transistors (JoFETs) is established. We perform measurements exhaustively on the JoFETs to study their properties as a function of the gate voltage, temperature, and magnetic field. The devices show gate-tunability of the critical current (IC) and the normal state resistance (RN). The devices are estimated to have a high-transparency superconductor/semiconductor interface, as demonstrated by the high ICRN product on the SiGe heterostructure. In the finite-voltage regime, the features corresponded to multiple Andreev reflections (MARs) are observed. Then, we fabricate and characterize niobium nitride (NbN) superconducting resonators on SiGe heterostructure. We measure the resonators in the transmission mode and extract the resonant frequency (fr), internal quality factor (Qi), and coupling quality factor (Qc) from the transmission coefficient (S21). Following that, we develop the fabrication process to integrate Al-Ge-Al junctions shunted with capacitors, or, in other words,gatemon, into the resonator scheme and perform the fabrication according to the design. We demonstrate the anticrossing feature in one of the fabricated gatemons. The resonant frequency of the gatemon is mapped using the two-tone spectroscopy technique and is found to be gate-tunable. The qubit has large spectral linewidth, implying a low coherence time. Additionally, we conduct the current-phase relationship (CPR) measurement on the junctions in the Superconducting QUantum Interference Device (SQUID) geometry. We can demonstrate that the junctions pose non-sinusoidal CPR. Further, the integer and half-integer Shapiro steps are observed in the current-voltage characteristic curves of irradiated junctions. This indicates that our junctions have the cos 2φ element, which can open up another possibility toward protected qubits.
Abstract Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) function as Josephson junctions with a gate-tunable critical current. Additionally, they can feature a non- sinusoidal current-phase relation (CPR) containing multiple harmonics of the superconducting phase difference, a so-far underutilized property. In this work, we exploit this multi-harmonicity to create a Josephson circuit element with an almost perfectly π-periodic CPR, indicative of a largely dominant charge-4e supercurrent transport. Such a Josephson element was recently proposed as the basic building block of a protected superconducting qubit. Here, it is realized using a superconducting quantum interference device (SQUID) with low-inductance aluminum arms and two nominally identical JoFETs. The latter are fabricated from a SiGe/Ge/SiGe quantum-well heterostructure embedding a high-mobility two-dimensional hole gas. By carefully adjusting the JoFET gate voltages and finely tuning the magnetic flux through the SQUID close to half a flux quantum, we achieve a regime where the sin(2φ) component accounts for more than 95 % of the total supercurrent. This result demonstrates a new promising route for the realization of superconducting qubits with enhanced coherence properties.
A superconducting fluxonium circuit is an RF-superconducting quantum interference device-type flux qubit that uses a large inductance built from an array of Josephson junctions or a high kinetic inductance material. This inductance suppresses charge sensitivity exponentially and flux sensitivity quadratically. In contrast to the transmon qubit, the anharmonicity of fluxonium can be large and positive, allowing for better separation between the low energy qubit manifold of the circuit and higher-lying excited states. Here, we propose a tunable coupling scheme for implementing two-qubit gates on fixed-frequency fluxonium qubits, biased at half flux quantum. In this system, both qubits and couplers are coupled capacitively and implemented as fluxonium circuits with an additional harmonic mode. We investigate the performance of the scheme by simulating a universal two-qubit fSim gate. In the proposed approach, we rely on a planar on-chip architecture for the whole device. Our design is compatible with existing hardware for transmon-based devices with the additional advantage of lower qubit frequency facilitating high-precision gating.
Interactions that mix conjugate variables, such as the flux through a circuit element and the charge across it, lie outside the reach of the elementary couplings of superconducting circuits. Capacitors connect charge to charge, and inductors connect flux to flux, while no two-terminal element couples flux to charge directly. A native flux-charge coupling would thus serve as a circuit primitive in its own right, opening direct routes to non-reciprocity, protected modes, and unconventional readout. In this work, we demonstrate a flux-charge coupling by harnessing a voltage-tunable Josephson junction with parametrically modulated critical current, which mediates the interaction between a classical charge variable and a quantum flux operator. Relying on parity-selection rules in a hybrid superconducting-semiconductor fluxonium, we isolate the flux-charge coupling from other parasitic capacitive contributions and perform cross-quadrature-activated coherent control of states. Critically, we realize a flux-charge coupling that scales linearly with driving amplitude while keeping the transition energy first-order-insensitive to gate voltage. Such unconventional interaction broadens the toolbox of superconducting circuits with a critical missing component that enables the coherent coupling of conjugate variables.