Gate- and flux-tunable sin(2φ) Josephson element with planar-Ge junctions
Axel Leblanc, Chotivut Tangchingchai, Zahra Sadre Momtaz, Elyjah Kiyooka, Jean‐Michel Hartmann, F. Gustavo, Jean-Luc Thomassin, Boris Brun, Vivien Schmitt, Simon Zihlmann, Romain Maurand, Étienne Dumur, Silvano De Franceschi, F. Lefloch
Abstract Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) function as Josephson junctions with a gate-tunable critical current. Additionally, they can feature a non- sinusoidal current-phase relation (CPR) containing multiple harmonics of the superconducting phase difference, a so-far underutilized property. In this work, we exploit this multi-harmonicity to create a Josephson circuit element with an almost perfectly π-periodic CPR, indicative of a largely dominant charge-4e supercurrent transport. Such a Josephson element was recently proposed as the basic building block of a protected superconducting qubit. Here, it is realized using a superconducting quantum interference device (SQUID) with low-inductance aluminum arms and two nominally identical JoFETs. The latter are fabricated from a SiGe/Ge/SiGe quantum-well heterostructure embedding a high-mobility two-dimensional hole gas. By carefully adjusting the JoFET gate voltages and finely tuning the magnetic flux through the SQUID close to half a flux quantum, we achieve a regime where the sin(2φ) component accounts for more than 95 % of the total supercurrent. This result demonstrates a new promising route for the realization of superconducting qubits with enhanced coherence properties.
Abstract Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) function as Josephson junctions with a gate-tunable critical current. Additionally, they can feature a non- sinusoidal current-phase relation (CPR) containing multiple harmonics of the superconducting phase difference, a so-far underutilized property. In this work, we exploit this multi-harmonicity to create a Josephson circuit element with an almost perfectly π-periodic CPR, indicative of a largely dominant charge-4e supercurrent transport. Such a Josephson element was recently proposed as the basic building block of a protected superconducting qubit. Here, it is realized using a superconducting quantum interference device (SQUID) with low-inductance aluminum arms and two nominally identical JoFETs. The latter are fabricated from a SiGe/Ge/SiGe quantum-well heterostructure embedding a high-mobility two-dimensional hole gas. By carefully adjusting the JoFET gate voltages and finely tuning the magnetic flux through the SQUID close to half a flux quantum, we achieve a regime where the sin(2φ) component accounts for more than 95 % of the total supercurrent. This result demonstrates a new promising route for the realization of superconducting qubits with enhanced coherence properties.
Hybrid superconductor(S)-semiconductor(Sm) devices bring a range of functionalities into superconducting circuits by introducing Josephson field-effect transistors (JoFETs): Josephson junctions with a gate-tunable critical current. In particular, hybrid parity-protected qubits and Josephson diodes were recently proposed and experimentally demonstrated. Such devices leverage the multiharmonicity of the Josephson current-phase relation (CPR) in highly transparent S-Sm-S junctions, a so-far underutilized property. In this work we report an experimental study of superconducting quantum-interference devices (SQUIDs) embedding JoFETs fabricated from a SiGe/Ge/SiGe heterostructure grown at CEA-Grenoble. The single junction CPRs shows multiple harmonics with gate tunable amplitudes. In the presence of microwave irradiation, the appearance of integer and half integer Shapiro steps confirms this observation. A combination of magnetic-flux and gate-voltage control enables tuning the SQUID functionality from a nonreciprocal Josephson-diode regime with 27 % asymmetry to a π-periodic Josephson regime. Within a double SQUID device, we are able to quantitatively characterize a regime where the sin(2φ) component accounts for more than 95 % of the total supercurrent. Finally, this result is placed into perspective through a discussion of the implementation of a cos(2φ) parity-protected qubit within the Al-Ge/SiGe hybrid platform
Hybrid superconductor(S)-semiconductor(Sm) devices bring a range of functionalities into superconducting circuits. In particular, hybrid parity-protected qubits and Josephson diodes were recently proposed and experimentally demonstrated. Such devices leverage the nonsinusoidal character of the Josephson current-phase relation (CPR) in highly transparent S-Sm-S junctions. Here, we report an experimental study of superconducting quantum-interference devices (SQUIDs) embedding Josephson field-effect transistors fabricated from a SiGe/Ge/SiGe heterostructure grown on a 200-mm silicon wafer. The single-junction CPR shows up to three harmonics with gate-tunable amplitude. In the presence of microwave irradiation, the ratio of the first two dominant harmonics, corresponding to single and double Cooper-pair transport processes, is consistently reflected in relative weight of integer and half-integer Shapiro steps. A combination of magnetic-flux and gate-voltage control enables tuning the SQUID functionality from a nonreciprocal Josephson-diode regime with 27% asymmetry to a π -periodic Josephson regime suitable for the implementation of parity-protected superconducting qubits. These results illustrate the potential of Ge-based hybrid devices as versatile and scalable building blocks of superconducting quantum circuits. Published by the American Physical Society 2024
Controlling the current-phase relation (CPR) of Josephson elements is essential for tailoring the eigenstates of superconducting qubits, tuning the properties of parametric amplifiers, and designing nonreciprocal superconducting devices. Here, we introduce the hybrid Josephson rhombus, a highly tunable superconducting circuit containing four semiconductor-superconductor hybrid Josephson junctions embedded in a loop. Combining magnetic frustration with gate-voltage-controlled tuning of individual Josephson couplings provides deterministic control of the harmonic content of the rhombus CPR. We show that, for balanced Josephson couplings at full frustration, the hybrid rhombus displays a π -periodic cos ( 2 φ ) potential, indicating coherent charge- 4 e transport. Tuning away from the balanced configuration, we observe a superconducting diode effect with efficiency exceeding 25%. These results showcase the potential of hybrid Josephson rhombi as fundamental building blocks for noise-resilient qubits and quantum devices with custom transport properties.
Superconducting qubit based on superconducting circuits consist of a superconducting capacitor and a Josephson junction with the transmon geometry is extensively used in advanced quantum processors, pursuing scalable quantum computing. The tuning of the qubit frequency of the transmon relies on magnetic flux dependent interference between the supercurrents of two superconductor-insulator superconductor(S-I-S) Josephson junctions in a superconducting loop. Josephson junction based on superconductor-semiconductor-superconductor (S-Sm-S) materialsopens up a possibility to the gate-tunable transmon, referred to as the "gatemon", in which the qubit frequency can be tuned by electrostatic mean. Recent realizations of gatemons on III-V material platforms show impressive development on the alternative to the transmon, yet still leave a big question on the scalability. The silicon-germanium (SiGe) heterostructure is one of the potential platforms to host hybrid devices due to its high hole mobility and the low Schottky barrier at the Ge-metal interface. Additionally, the compatibility with the silicon-based semiconductor industry is a capable advantage for the scaling-up qubit platform.In this thesis, we develop gatemons based on the Al-Ge-Al Josephson junction in the SiGe heterostructure. Firstly, the robust fabrication recipe, found on a top down approach, for Josephson Field Effect Transistors (JoFETs) is established. We perform measurements exhaustively on the JoFETs to study their properties as a function of the gate voltage, temperature, and magnetic field. The devices show gate-tunability of the critical current (IC) and the normal state resistance (RN). The devices are estimated to have a high-transparency superconductor/semiconductor interface, as demonstrated by the high ICRN product on the SiGe heterostructure. In the finite-voltage regime, the features corresponded to multiple Andreev reflections (MARs) are observed. Then, we fabricate and characterize niobium nitride (NbN) superconducting resonators on SiGe heterostructure. We measure the resonators in the transmission mode and extract the resonant frequency (fr), internal quality factor (Qi), and coupling quality factor (Qc) from the transmission coefficient (S21). Following that, we develop the fabrication process to integrate Al-Ge-Al junctions shunted with capacitors, or, in other words,gatemon, into the resonator scheme and perform the fabrication according to the design. We demonstrate the anticrossing feature in one of the fabricated gatemons. The resonant frequency of the gatemon is mapped using the two-tone spectroscopy technique and is found to be gate-tunable. The qubit has large spectral linewidth, implying a low coherence time. Additionally, we conduct the current-phase relationship (CPR) measurement on the junctions in the Superconducting QUantum Interference Device (SQUID) geometry. We can demonstrate that the junctions pose non-sinusoidal CPR. Further, the integer and half-integer Shapiro steps are observed in the current-voltage characteristic curves of irradiated junctions. This indicates that our junctions have the cos 2φ element, which can open up another possibility toward protected qubits.
Superconducting quantum circuits derive their nonlinearity from the Josephson energy-phase relation. Besides the fundamental cosφ term, this relation can also contain higher Fourier harmonics cos(kφ) corresponding to correlated tunneling of k Cooper pairs. The parity of the dominant tunneling process, i.e.~whether an odd or even number of Cooper pairs tunnel, results in qualitatively different properties, and controlling this opens up a wide range of applications in superconducting technology. However, access to even-dominated regimes has remained challenging and has so far relied on complex multi-junction or all-hybrid architectures. Here, we demonstrate a simple "harmonic parity qubit" (HPQ); an element that combines two aluminum-oxide tunnel junctions in parallel to a gate-tunable InAs/Al nanowire junction forming a SQUID, and use spectroscopy versus flux to reconstruct its energy-phase relation at 85 gate voltage points. At half flux quantum, the odd harmonics of the Josephson potential can be suppressed by up to two orders of magnitude relative to the even harmonics, producing a double-well potential dominated by even harmonics with minima near ±π/2. The ability to control harmonic parity enables supercurrent carried by pairs of Cooper pairs and provides a new building block for Fourier engineering in superconducting circuits.
Superconducting qubit based on superconducting circuits consist of a superconducting capacitor and a Josephson junction with the transmon geometry is extensively used in advanced quantum processors, pursuing scalable quantum computing. The tuning of the qubit frequency of the transmon relies on magnetic flux-dependent interference between the supercurrents of two superconductor-insulator-superconductor (S-I-S) Josephson junctions in a superconducting loop. Josephson junction based on superconductor-semiconductor-superconductor (S-Sm-S) materials opens up a possibility to the gate-tunable transmon, referred to as the "gatemon", in which the qubit frequency can be tuned by electrostatic mean. Recent realizations of gatemons on III-V material platforms show impressive development on the alternative to the transmon, yet still leave a big question on the scalability. The silicon-germanium (SiGe) heterostructure is one of the potential platforms to host hybrid devices due to its high hole mobility and the low Schottky barrier at the Ge-metal interface. Additionally, the compatibility with the silicon-based semiconductor industry is a capable advantage for the scaling-up qubit platform.In this thesis, we develop gatemons based on the Al-Ge-Al Josephson junction in the SiGe heterostructure. Firstly, the robust fabrication recipe, found on a top-down approach, for Josephson Field Effect Transistors (JoFETs) is established. We perform measurements exhaustively on the JoFETs to study their properties as a function of the gate voltage, temperature, and magnetic field. The devices show gate-tunability of the critical current and the normal state resistance . The devices are estimated to have a high-transparency superconductor-semiconductor interface, as demonstrated by the high product on the SiGe heterostructure. In the finite-voltage regime, the features corresponded to multiple Andreev reflections (MARs) are observed. Then, we fabricate and characterize niobium nitride (NbN) superconducting resonators on SiGe heterostructure. We measure the resonators in the transmission mode and extract the resonant frequency , internal quality factor, and coupling quality factor from the transmission coefficient. Following that, we develop the fabrication process to integrate Al-Ge-Al junctions shunted with capacitors, or, in other words, gatemon, into the resonator scheme and perform the fabrication according to the design. We demonstrate the anticrossing feature in one of the fabricated gatemons. The resonant frequency of the gatemon is mapped using the two-tone spectroscopy technique and is found to be gate-tunable. The qubit has large spectral linewidth, implying a low coherence time. Additionally, we conduct the current-phase relationship (CPR) measurement on the junctions in the Superconducting QUantum Interference Device (SQUID) geometry. We can demonstrate that the junctions pose non-sinusoidal CPR. Further, the integer and half-integer Shapiro steps are observed in the current-voltage characteristic curves of irradiated junctions. This indicates that our junctions have the element, which can open up another possibility toward protected qubits.