In silicon quantum computers, a single electron is trapped in a microstructure called a quantum dot, and its spin is used as a qubit. For large-scale integration of qubits, we previously proposed an approach of sharing a control gate in the row or column of a 2-D quantum dot array. In our array, the shuttling of electrons is a useful technique to operate the target qubit independently and avoid crosstalk. However, since the shuttling is also conducted using shared control gates, the movement of qubits is complexly constrained. We, therefore, propose a formal model based on state transition systems to describe those constraints and operation procedures on the array. We also present an approach to generate operation procedures under the constraints. Utilizing this approach, we present a concrete method for our 16 × 8 quantum dot array. By implementing the proposed method as a quantum compiler, we confirmed that it is possible to generate operation procedures in a practical amount of time for arbitrary quantum circuits. We also demonstrated that crosstalk can be avoided by shuttling and that the fidelity in that case is higher than when crosstalk is not avoided.
In silicon quantum computers, a single electron is trapped in a microstructure called a quantum dot, and its spin is used as a qubit. For large-scale integration of qubits, we previously proposed an approach of sharing a control gate in the row or column of a 2-D quantum dot array. In our array, the shuttling of electrons is a useful technique to operate the target qubit independently and avoid crosstalk. However, since the shuttling is also conducted using shared control gates, the movement of qubits is complexly constrained. We, therefore, propose a formal model based on state transition systems to describe those constraints and operation procedures on the array. We also present an approach to generate operation procedures under the constraints. Utilizing this approach, we present a concrete method for our 16 × 8 quantum dot array. By implementing the proposed method as a quantum compiler, we confirmed that it is possible to generate operation procedures in a practical amount of time for arbitrary quantum circuits. We also demonstrated that crosstalk can be avoided by shuttling and that the fidelity in that case is higher than when crosstalk is not avoided.
Fault-tolerant quantum computation requires increasing the qubit count while maintaining high performance and connectivity. Semiconductor qubits have demonstrated high-fidelity operation, but growing the system size at sufficient connectivity remains challenging, such that scaling mainly occurred in one spatial direction to preserve access for control lines in the other. Here, we realise an approach that relaxes the requirements on fabrication and demonstrate a 6$\times6quantumdotarray,definedbyasharedbarriergateandindividualplungergates.Thequantumdotsaretunedthroughcoherentspinshuttlingoverdistancesupto5.2umintoasparseconfigurationof10simultaneouslyoperatedqubits,leavingspaceforshuttlingconnections.Wereducecrosstalkby42\times$ in this separated regime, enabling high-fidelity simultaneous single-qubit control, while control-Z operations can be implemented through shuttling and plunger-only control. These results promise high-connectivity quantum circuits, enabled by scaling to two-dimensional geometries and exploiting shuttling.
Single spin quantum dot qubits in silicon are a promising candidate for a scalable quantum processor due to their long coherence times, compact size, and ease of integration into existing fabrication technologies. Realizing a large quantum processor composed of thousands or more logical qubits requires the integration of conventional transistor circuitry \nand wiring interconnects to control each individual dot in the processor. The high density of control wiring required for these processors presents many engineering challenges. In this thesis, we propose a surface code quantum processor for silicon quantum dot qubits based on a node/network architecture. Local nodes consisting of just seven quantum dots are \nspatially separated on the order of microns to facilitate space for the necessary high density wiring. Entanglement is distributed between individual nodes via shuttling of entangled electron pairs throughout the network. X or Z stabilizer operations, necessary for operating the surface code, are realized by distributing three electron spin singlet pairs across four local nodes followed by local gate operations and ancilla measurements. Simulations of electron shuttling indicate that adiabatic transport is possible on timescales that do not bottleneck the processor speed. Phase rotation of the shuttled spin, induced by the Stark shift, can lower the overall shuttling fi delity; however, the error can be mitigated by proper electrostatic tuning of the stationary electron's g-factor. Using realistic noise models, we estimate error thresholds with respect to single and two-qubit gate fidelities as well as \nsinglet dephasing errors during shuttling. Electron shuttling is a key resource of the proposed network architecture. We continue the shuttling simulations by presenting an algorithm for finding constant-adiabatic shuttling control pulses, which enables a more rigorous study of how different conditions impact the shuttling speed and fidelity. These constant adiabatic pulses are used to optimize the physical device geometry to maximize charge shuttling speeds up to 300 nm/ns in the single-valley case. We then switch to an effective Hamiltonian representation where spin and valley degrees of freedom are accounted for during shuttling. Using realistic device and material parameters, shuttle speeds in the range 10-100 nm/ns with high spin entanglement \n fidelities are obtained when the tunneling energy exceeds the Zeeman energy. High fidelity shuttling also requires the inter-dot valley phase difference to be below a threshold determined by the ratio of tunneling and Zeeman energies, so that spin-valley-orbit mixing is weak. In this regime, we find that the primary source of infi delity is a coherent spin rotation that is correctable, in principle, using single spin rotations. Two-qubit gates in the network architecture are mediated by the exchange interaction, \nan interaction that stems from the Coulomb interaction but manifests as a rotation between the |0,1> and |1,0> two qubit states. Realizing fault tolerant two-qubit gates has proven difficult in silicon quantum dots due to charge noise which perturbs the electron orbitals states, causing decoherence. Quantitatively accurate modelling of exchange in general quantum dot networks is important towards realizing fault tolerant gates. Traditional modelling methods, such as a full con figuration interaction approach, are cumbersome due to significant computational overhead required when accounting for the electron-electron interactions in the calculation. We present a modi ed linear combination of harmonic orbitals con figuration interaction (LCHO-CI) approach which signifi cantly reduces the computational time for obtaining quantitatively accurate estimations of exchange. The method works by approximating the single electron orbitals of the quantum dot network using an orthogonal basis of harmonic orbitals. This choice of orthogonal basis allows a precalculated library of matrix elements to be used in evaluating the Coulomb interactions, which speeds up the LCHO-CI calculation. The modi ed LCHO-CI approach is then used to study how the physical device geometry impacts the charge noise sensitivity of a double quantum dot system. We fi nd that, in general, geometries which increase the dot charging energy and decrease the gate lever arms improve the system's sensitivity to charge noise. We conclude this thesis by pivoting away from theoretical studies of silicon quantum dots and towards experimental studies of electron transport in dopant-free GaAs heterostructures. In modulation doped GaAs heterostructures, a doping layer is used to induce a two-dimensional electron gas (2DEG) at the heterojunction. Dopant-free GaAs lack the doping layer which makes fabrication more difficult as local electron reservoirs must be used to bring carriers and induce a 2DEG. The lack of the doping layer offers several advantages over modulation doped heterostructures, such as gate-ability of the 2DEG and ability to make ambipolar devices (both n- and p-type ohmic contacts). Realizing n- and p-type ohmic contacts requires etching a recess pit and depositing the ohmic material at an angle in order to preventing screening of the top gate when inducing a 2DEG or two-dimensional hole gas (2DHG). Magnetotransport experiments are used to characterize an induced 2DEG and 2DHG in a Hall bar fabricated on a 310 nm deep single heterojunction. The carrier mobility and density can be tuned using the top gate, and we achieve peak mobility values of 4.5E6 cm2/Vs and 0.65E6 cm2/Vs for the 2DEG and 2DHG respectively. We then move to a one-dimensional system and study electron transport through a quantum point contact. Conductance quantization is observed, and subband spectroscopy \nmeasurements indicate a 1D subband spacing of 4.5 meV. Finally, we study dynamically driven electron transport in a zero-dimensional system using a tunable-barrier quantum dot acting as a single electron pump. Single electron pumping is observed up to T = 5 K, and fi ts to the electron cascade model suggests pumping errors of 1.87 ppm when operated at a driving frequency of f = 500 MHz.
The spin states of single electrons in gate-defined quantum dots satisfy crucial requirements for a practical quantum computer. These include extremely long coherence times, high-fidelity quantum operation, and the ability to shuttle electrons as a mechanism for on-chip flying qubits. To increase the number of qubits to the thousands or millions of qubits needed for practical quantum information, we present an architecture based on shared control and a scalable number of lines. Crucially, the control lines define the qubit grid, such that no local components are required. Our design enables qubit coupling beyond nearest neighbors, providing prospects for nonplanar quantum error correction protocols. Fabrication is based on a three-layer design to define qubit and tunnel barrier gates. We show that a double stripline on top of the structure can drive high-fidelity single-qubit rotations. Self-aligned inhomogeneous magnetic fields induced by direct currents through superconducting gates enable qubit addressability and readout. Qubit coupling is based on the exchange interaction, and we show that parallel two-qubit gates can be performed at the detuning-noise insensitive point. While the architecture requires a high level of uniformity in the materials and critical dimensions to enable shared control, it stands out for its simplicity and provides prospects for large-scale quantum computation in the near future.
Quantum dots can confine single electrons or holes to define spin qubits that can be operated with high fidelity. Experimental work has progressed from linear to two-dimensional arrays of quantum dots, enabling qubit interactions that are essential for quantum simulation and computation. Here, we explore architectures beyond planar geometries by constructing quantum dot arrays in three dimensions. We realize an eight-quantum dot system in a silicon-germanium heterostructure comprising two stacked germanium quantum wells, where quantum dots are positioned at the vertices of a cuboid. Using electrostatic gate control, we load a single hole into any of the eight quantum dots. To demonstrate the potential of multilayer quantum dot systems, we show coherent spin control and hopping-induced spin rotations by shuttling between the quantum wells. The ability to extend quantum dot arrays in three dimensions provides opportunities for novel quantum hardware and high-connectivity quantum circuits.
In semiconductor spin qubits which typically interact through short-range exchange coupling, shuttling of spin is a practical way to generate quantum operations between distant qubits. Although the exchange is often tunable through voltages applied to gate electrodes, its minimal value can be significantly large, which hinders the applicability of existing shuttling protocols to such devices, requiring a different approach. In this work, we extend our previous results for double- and triple-dot systems, and describe a method for implementing spin state transfer in long chains of singly occupied quantum dots in a non-adiabatic manner. We make use of Cartan decomposition to break down the interacting problem into simpler problems in a systematic way, and use dynamical invariants to design smooth non-adiabatic pulses that can be implemented in devices with modest control bandwidth. Finally, we discuss the extensibility of our results to directed shuttling of spin states on two-dimensional lattices of quantum dots with fixed coupling. This article is part of the theme issue 'Shortcuts to adiabaticity: theoretical, experimental and interdisciplinary perspectives'.