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arXiv:2310.11410 · Physica Scripta

High kinetic inductance NbTiN films for quantum limited travelling wave parametric amplifiers

Federica Mantegazzini, F Ahrens, M. Borghesi, P. Falferi, Luca Fasolo, M. Faverzani, E. Ferri, Danilo Labranca, B. Margesin, R. Mezzena, Roberto Moretti, Angelo Nucciotti, Luca Origo, Andrea Vinante, M. Zannoni, Andrea Giachero

Published Oct 25, 2023• 10 citations
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Abstract

Abstract A wide-bandwidth and low-noise amplification chain in the microwave regime is crucial for the efficient read-out of quantum systems based on superconducting detectors, such as Microwave Kinetic Inductance Detectors (MKIDs), Transition Edge Sensors (TESs), Magnetic Microcalorimeters (MMCs), and RF cavities, as well as qubits. Kinetic Inductance Travelling Wave Parametric Amplifiers (KI-TWPAs) operated in a three-wave mixing fashion have demonstrated exceptional dynamic range and low-noise performance, approaching the quantum limit. These amplifiers can be fabricated using a single layer of a high kinetic inductance film as weakly dispersive artificial transmission lines, with the ability to control the phase-matched bandwidth through dispersion engineering. In this study, we present the optimisation of the rf sputter-deposition process of NbTiN films using a Nb80%Ti20% target, with the goal of achieving precise control over film characteristics, resulting in high kinetic inductance while maintaining a high transition temperature. The parameter landscape related to the different sputtering conditions, such as pressure, power, and nitrogen flow, has been explored and the film thickness has been used as a fine-tuning parameter to adjust the properties of the final NbTiN films used for the fabrication of KI-TWPAs. As a final result, we have obtained a NbTiN film with a kinetic inductance of 8.5 pH/sq which we have exploited to fabricate KI-TWPA prototype devices, showing promising amplification performance.

DOI
10.1088/1402-4896/ad070d

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Kinetic inductance traveling-wave parametric amplifiers (KI-TWPAs) have a wide instantaneous bandwidth with a near quantum-limited noise performance and a relatively high dynamic range. Because of this, they are suitable readout devices for cryogenic detectors and superconducting qubits and have a variety of applications in quantum sensing. This work discusses the design, fabrication, and performance of a KI-TWPA based on four-wave mixing in a NbTiN microstrip transmission line. This device amplifies a signal band from 4 to 8 GHz without contamination from image tones, which are produced in a separate higher frequency band. The 4–8 GHz band is commonly used to read out cryogenic detectors, such as microwave kinetic inductance detectors and Josephson junction-based qubits. We report a measured maximum gain of over 20 dB using four-wave mixing with a 1 dB gain compression point of −58 dBm at 15 dB of gain over that band. The bandwidth and peak gain are tunable by adjusting the pump-tone frequency and power. Using a Y-factor method, we measure an amplifier-added noise of 0.5 ≤ Nadded ≤ 1.5 photons from 4.5 to 8 GHz.

arXiv:2402.11751•APL Quantum•Jul 11, 2024•25 citations
Abstract A wide-bandwidth and low-noise amplification chain in the microwave regime is crucial for the efficient read-out of quantum systems based on superconducting detectors, such as Microwave Kinetic Inductance Detectors (MKIDs), Transition Edge Sensors (TESs), Magnetic Microcalorimeters (MMCs), and RF cavities, as well as qubits. Kinetic Inductance Travelling Wave Parametric Amplifiers (KI-TWPAs) operated in a three-wave mixing fashion have demonstrated exceptional dynamic range and low-noise performance, approaching the quantum limit. These amplifiers can be fabricated using a single layer of a high kinetic inductance film as weakly dispersive artificial transmission lines, with the ability to control the phase-matched bandwidth through dispersion engineering. In this study, we present the optimisation of the rf sputter-deposition process of NbTiN films using a Nb80%Ti20% target, with the goal of achieving precise control over film characteristics, resulting in high kinetic inductance while maintaining a high transition temperature. The parameter landscape related to the different sputtering conditions, such as pressure, power, and nitrogen flow, has been explored and the film thickness has been used as a fine-tuning parameter to adjust the properties of the final NbTiN films used for the fabrication of KI-TWPAs. As a final result, we have obtained a NbTiN film with a kinetic inductance of 8.5 pH/sq which we have exploited to fabricate KI-TWPA prototype devices, showing promising amplification performance.
A quantum-limited amplification chain is a fundamental advantage for any application that may benefit from the detection of very faint signals. Reading out arrays of superconducting detectors (TESs or MKIDs), resonant cavities, or qubits, calls for large bandwidth amplifiers in addition to having the lowest possible noise. At millikelvin temperatures, Kinetic Inductance Traveling-Wave Parametric Amplifiers (KI-TWPAs) working in 3-wave-mixing (3WM) and fabricated from a 20 nm thick NbTiN film have shown promising noise performances, as they can operate close to the quantum limit (Malnou et al., 2021). However, they still require fairly high pump power. Devices that would require lower pump power would be easier to implement in readout chains, could reach the quantum limit and they would be compatible with qubit readout. A possible solution for obtaining this optimal configuration is to use a thinner superconducting film. In this work we explore the properties of NbTiN films with a thickness less than 20 nm and we report the obtained experimental characterizations in terms of critical temperature, normal resistivity, and kinetic inductance. A new design for a 3WM KI-TWPA amplifier, based on these developed superconducting films, is introduced and discussed.
We present a detailed simulation and design framework for realizing traveling wave parametric amplifiers (TWPAs) using the nonlinear kinetic inductance of disordered superconductors -- in our case niobium-titanium-nitride (NbTiN). These kinetic inductance TWPAs (KITs) operate via three-wave mixing (3WM) to achieve high broadband gain and near-quantum-limited (nQL) noise. Representative fabricated devices -- realized using an inverted microstrip (IMS), dispersion-engineered, artificial transmission line -- demonstrate power gains above 25 dB, bandwidths beyond 3 GHz, and achieve ultimate system noise levels of 1.1 quanta even when operated with no magnetic shielding. These performance metrics are competitive with state-of-the-art Josephson-junction-based TWPAs but involve simpler fabrication and able to providing three orders of magnitude higher dynamic range (IIP1=−68IIP_1 = -68IIP1​=−68 dBm, IIP3=−55IIP_3 = -55IIP3​=−55 dBm), and high magnetic field resilience -- making KITs an attractive technology for highly multiplexed readout of quantum information and superconducting detector systems.
Background Kinetic inductance travelling-wave parametric amplifiers (KITWPAs) have proven effective in achieving high gain over broad bandwidths whilst achieving near quantum-limited noise performance, properties which are extremely important for many ultra-sensitive experiments such as radio/millimetre/sub-millimetre astronomy, neutrino mass experiments, and axion dark matter searches, as well as commercial applications like quantum computational and communication systems. Methods This paper introduces the preliminary experimental exploration of an alternative KITWPA utilising thin titanium nitride (TiN) films as opposed to the conventionally used niobium titanium nitride (NbTiN) films. TiN films exhibit properties that could be advantageous for KITWPA operation, owing to its controllable critical temperature (T c) and physical robustness, hence KITWPAs fabricated from TiN films have the potential to replace NbTiN-based TWPAs for various applications, such as reducing the high pump power required to drive a NbTiN TWPA. Our TiN-based KITWPA devices were designed and fabricated with a 42 cm long coplanar waveguide transmission line patterned into a 100 nm thick TiN film, wound in a double spiral fashion to fit into a 2.2×2.2 cm chip. Results We successfully achieved broadband performance, with the best device displaying a peak averaged gain of ~5 dB with a bandwidth of ~3–13 GHz, making this one of the first broadband gain measurements of a TiN KITWPA reported in the literature. Despite this, the measured gain in all batches was lower than simulated due unexpected additional loss mechanisms. Conclusions The preliminary results presented here suggest that TiN films are suitable for KITWPA operation, although further investigation is required to improve the gain performance.
Traveling-wave parametric amplifiers based on superconducting NbTiN films are being developed that provide gain over nearly an octave of bandwidth at microwave frequencies. The amplifiers are non-linear transmission lines, where the nonlinearity comes from the current dependence of the kinetic inductance. Amplification results from three and four-wave mixing processes, and phase matching over a wide frequency range is achieved by engineering the dispersion characteristics of the transmission line. Recent noise measurements over a wide frequency band demonstrate that the added noise of these amplifiers is close to one half photon, consistent with the quantum limit for a phase preserving amplifier. We will discuss applications of this class of amplifier to astronomical instruments.
Abstract A Kinetic Inductance Traveling Wave Amplifier (KIT) utilizes the nonlinear kinetic inductance of superconducting films, particularly niobium titanium nitride (NbTiN), for parametric amplification. These amplifiers achieve remarkable performance in terms of gain, bandwidth, and compression power and frequently approach the quantum limit for noise. However, most KIT demonstrations have been isolated from practical device readout systems. Using a KIT as the first amplifier in the readout chain of an unoptimized microwave SQUID multiplexer coupled to a transition-edge sensor microcalorimeter, we see an initial improvement in the flux noise [1]. One challenge in KIT integration is the considerable microwave pump power required to drive the non-linearity. To address this, we have initiated efforts to reduce the pump power by using thinner NbTiN films and an inverted microstrip transmission line design. In this article, we present the new transmission line design, fabrication procedure, and initial device characterization—including gain and added noise. These devices exhibit over 10 dB of gain with a 3 dB bandwidth of approximately 5.5–7.25 GHz, a maximum practical gain of 12 dB, and typical gain ripple under 4 dB peak to peak. We observe an appreciable impedance mismatch in the NbTiN transmission line, which is likely the source of the majority of the gain ripple. Finally, we perform an initial noise characterization and demonstrate system-added noise of three quanta or less over nearly the entire 3 dB bandwidth.
Kinetic inductance traveling-wave parametric amplifiers (KI-TWPAs) have a wide instantaneous bandwidth with a near quantum-limited noise performance and a relatively high dynamic range. Because of this, they are suitable readout devices for cryogenic detectors and superconducting qubits and have a variety of applications in quantum sensing. This work discusses the design, fabrication, and performance of a KI-TWPA based on four-wave mixing in a NbTiN microstrip transmission line. This device amplifies a signal band from 4 to 8 GHz without contamination from image tones, which are produced in a separate higher frequency band. The 4–8 GHz band is commonly used to read out cryogenic detectors, such as microwave kinetic inductance detectors and Josephson junction-based qubits. We report a measured maximum gain of over 20 dB using four-wave mixing with a 1 dB gain compression point of −58 dBm at 15 dB of gain over that band. The bandwidth and peak gain are tunable by adjusting the pump-tone frequency and power. Using a Y-factor method, we measure an amplifier-added noise of 0.5 ≤ Nadded ≤ 1.5 photons from 4.5 to 8 GHz.