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arXiv:2309.09857 · Physical review. B./Physical review. B

Direct topological insulator transitions in three dimensions are destabilized by nonperturbative effects of disorder

Yixing Fu, Justin H. Wilson, David A. Huse, J. H. Pixley

Published May 1, 2024• 3 citations
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Abstract

We reconsider the phase diagram of a three-dimensional ${\mathbb{Z}}_{2}$ topological insulator in the presence of short-ranged potential disorder, with the insight that nonperturbative rare states destabilize the noninteracting Dirac semimetal critical point separating different topological phases. Based on our numerical data on the density of states, conductivity, and wave functions, we argue that the putative Dirac semimetal line is destabilized into a diffusive metal phase of finite extent due to nonperturbative effects of rare regions. We discuss the implications of these results for past and current experiments on doped topological insulators.

DOI
10.1103/physrevb.109.205106

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We reconsider the phase diagram of a three-dimensional Z2{\mathbb{Z}}_{2}Z2​ topological insulator in the presence of short-ranged potential disorder, with the insight that nonperturbative rare states destabilize the noninteracting Dirac semimetal critical point separating different topological phases. Based on our numerical data on the density of states, conductivity, and wave functions, we argue that the putative Dirac semimetal line is destabilized into a diffusive metal phase of finite extent due to nonperturbative effects of rare regions. We discuss the implications of these results for past and current experiments on doped topological insulators.
The quantum phase transition between the three dimensional Dirac semimetal and the diffusive metal can be induced by increasing disorder. Taking the system of a disordered Z2 topological insulator as an important example, we compute the single particle density of states by the kernel polynomial method. We focus on three regions: the Dirac semimetal at the phase boundary between two topologically distinct phases, the tricritical point of the two topological insulator phases and the diffusive metal, and the diffusive metal lying at strong disorder. The density of states obeys a novel single parameter scaling, collapsing onto two branches of a universal scaling function, which correspond to the Dirac semimetal and the diffusive metal. The diverging length scale critical exponent ν and the dynamical critical exponent z are estimated, and found to differ significantly from those for the conventional Anderson transition. Critical behavior of experimentally observable quantities near and at the tricritical point is also discussed.
We study the quantum phase diagram of a three dimensional noninteracting Dirac semimetal in the presence of either quenched axial or scalar potential disorder, by calculating the average and the typical density of states as well as the inverse participation ratio using numerically exact methods. We show that as a function of the disorder strength a half-filled (i.e., undoped) Dirac semimetal displays three distinct ground states, namely an incompressible semimetal, a compressible diffusive metal, and a localized Anderson insulator, in stark contrast to a conventional dirty metal that only supports the latter two phases. We establish the existence of two distinct quantum critical points, which respectively govern the semimetal-metal and the metal-insulator quantum phase transitions and also reveal their underlying multifractal nature. Away from half-filling the (doped) system behaves as a diffusive metal that can undergo Anderson localization only, which is shown by determining the mobility edge and the phase diagram in terms of energy and disorder.
We discuss the effects of disorder in time-reversal-invariant topological insulators and superconductors in three spatial dimensions. For three-dimensional topological insulator in the symplectic (AII) symmetry class, the phase diagram in the presence of disorder and a mass term, which drives a transition between trivial and topological insulator phases, is computed numerically by the transfer matrix method. The numerics is supplemented by a field-theory analysis (the large-Nf{N}_{f}Nf​ expansion, where Nf{N}_{f}Nf​ is the number of valleys or Dirac cones), from which we obtain the correlation length exponent, and several anomalous dimensions at a nontrivial critical point separating a metallic phase and a Dirac semimetal. A similar-field theory approach is developed for disorder-driven transitions in symmetry classes AIII, CI, and DIII. For these three symmetry classes, where topological superconductors are characterized by integer topological invariant, a complementary description is given in terms of the nonlinear sigma model supplemented with a topological term, which is a three-dimensional analog of the Pruisken term in the integer quantum Hall effect.
Four-component massive and massless Dirac fermions in the presence of long range Coulomb interaction and chemical potential disorder exhibit striking fermionic quantum criticality. For an odd number of flavors of Dirac fermions, the sign of the Dirac mass distinguishes the topological and the trivial band insulator phases, and the gapless semimetallic phase corresponds to the quantum critical point that separates the two. Up to a critical strength of disorder, the semimetallic phase remains stable, and the universality class of the direct phase transition between two insulating phases is unchanged. Beyond the critical strength of disorder the semimetallic phase undergoes a phase transition into a disorder controlled diffusive metallic phase, and there is no longer a direct phase transition between the two types of insulating phases.
The quantum phase transition between two clean, noninteracting topologically distinct gapped states in three dimensions is governed by a massless Dirac fermion fixed point, irrespective of the underlying symmetry class, and this constitutes a remarkably simple example of superuniversality. For a sufficiently weak disorder strength, we show that the massless Dirac fixed point is at the heart of the robustness of superuniversality. We establish this by considering both perturbative and nonperturbative effects of disorder. The superuniversality breaks down at a critical strength of disorder, beyond which the topologically distinct localized phases become separated by a delocalized diffusive phase. In the global phase diagram, the disorder controlled fixed point where superuniversality is lost, serves as a multicritical point, where the delocalized diffusive and two topologically distinct localized phases meet and the nature of the localization-delocalization transition depends on the underlying symmetry class. Based on these features, we construct the global phase diagrams of noninteracting, dirty topological systems in three dimensions. We also establish a similar structure of the phase diagram and the superuniversality for weak disorder in higher spatial dimensions. By noting that 1/r21/{r}^{2}1/r2 power-law correlated disorder acts as a marginal perturbation for massless Dirac fermions in any spatial dimension ddd, we have established a general renormalization group framework for addressing disorder driven critical phenomena for fixed spatial dimension d>2d>2d>2.
One could tune a topological double-Weyl semimetal or a topological triple-Weyl semimetal to become a topologically trivial insulator by opening a band gap. This kind of quantum phase transition is characterized by the change of certain topological invariant. A new gapless semimetallic state emerges at each topological quantum critical point. Here we perform a renormalization group analysis to investigate the stability of such critical points against perturbations induced by random scalar potential and random vector potential. We find that the quantum critical point between double-Weyl semimetal and band insulator is unstable and can be easily turned into a compressible diffusive metal by any type of weak disorder. The quantum critical point between triple-Weyl semimetal and band insulator flows to a stable strong-coupling fixed point if the system contains a random vector potential merely along the z-axis, but becomes a compressible diffusive metal when other types of disorders exist.