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arXiv:2307.09078 · Physical Review Letters

Giant Two-Level Systems in a Granular Superconductor

M Donnell Kristen, Jan Nicolas Voss, Micha Wildermuth, Alexander Bilmes, Jürgen Lisenfeld, Hannes Rotzinger, Alexey Vladimirovich Ustinov

Published May 22, 2024• 14 citations
arXivHTMLPDF

Abstract

Disordered thin films are a common choice of material for superconducting, high impedance circuits used in quantum information or particle detector physics. A wide selection of materials with different levels of granularity are available, but, despite low microwave losses being reported for some, the high degree of disorder always implies the presence of intrinsic defects. Prominently, quantum circuits are prone to interact with two-level systems (TLS), typically originating from solid state defects in the dielectric parts of the circuit, like surface oxides or tunneling barriers. We present an experimental investigation of TLS in granular aluminum thin films under applied mechanical strain and electric fields. The analysis reveals a class of strongly coupled TLS having electric dipole moments up to 30 eÅ, an order of magnitude larger than dipole moments commonly reported for solid state defects. Notably, these large dipole moments appear more often in films with a higher resistivity. Our observations shed new light on granular superconductors and may have implications for their usage as a quantum circuit material.

DOI
10.1103/physrevlett.132.217002

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Disordered thin films are a common choice of material for superconducting, high impedance circuits used in quantum information or particle detector physics. A wide selection of materials with different levels of granularity are available, but, despite low microwave losses being reported for some, the high degree of disorder always implies the presence of intrinsic defects. Prominently, quantum circuits are prone to interact with two-level systems (TLS), typically originating from solid state defects in the dielectric parts of the circuit, like surface oxides or tunneling barriers. We present an experimental investigation of TLS in granular aluminum thin films under applied mechanical strain and electric fields. The analysis reveals a class of strongly coupled TLS having electric dipole moments up to 30 eÅ, an order of magnitude larger than dipole moments commonly reported for solid state defects. Notably, these large dipole moments appear more often in films with a higher resistivity. Our observations shed new light on granular superconductors and may have implications for their usage as a quantum circuit material.
Material-based two-level systems (TLSs), appearing as defects in low-temperature devices including superconducting qubits and photon detectors, are difficult to characterize. In this study we apply a uniform dc electric field across a film to tune the energies of TLSs within. The film is embedded in a superconducting resonator such that it forms a circuit quantum electrodynamical system. The energy of individual TLSs is observed as a function of the known tuning field. By studying TLSs for which we can determine the tunneling energy, the actual p_{z}, dipole moments projected along the uniform field direction, are individually obtained. A distribution is created with 60 p_{z}. We describe the distribution using a model with two dipole moment magnitudes, and a fit yields the corresponding values p=p_{1}=2.8±0.2 D and p=p_{2}=8.3±0.4 D. For a strong-coupled TLS the vacuum-Rabi splitting can be obtained with p_{z} and tunneling energy. This allows a measurement of the circuit's zero-point electric-field fluctuations, in a method that does not need the electric-field volume.
Abstract The anomalous low-temperature properties of glasses arise from intrinsic excitable entities, so-called tunneling Two-Level-Systems (TLS), whose microscopic nature has been baffling solid-state physicists for decades. TLS have become particularly important for micro-fabricated quantum devices such as superconducting qubits, where they are a major source of decoherence. Here, we present a method to characterize individual TLS in virtually arbitrary materials deposited as thin films. The material is used as the dielectric in a capacitor that shunts the Josephson junction of a superconducting qubit. In such a hybrid quantum system the qubit serves as an interface to detect and control individual TLS. We demonstrate spectroscopic measurements of TLS resonances, evaluate their coupling to applied strain and DC-electric fields, and find evidence of strong interaction between coherent TLS in the sample material. Our approach opens avenues for quantum material spectroscopy to investigate the structure of tunneling defects and to develop low-loss dielectrics that are urgently required for the advancement of superconducting quantum computers.
Quantum two-level systems (TLSs) intrinsic to glasses induce decoherence in many modern quantum devices, such as superconducting qubits. Although the low-temperature physics of these TLSs is usually well-explained by a phenomenological standard tunneling model of independent TLSs, the nature of these TLSs, as well as their behavior out of equilibrium and at high energies above 1 K, remain inconclusive. Here we measure the non-equilibrium dielectric loss of TLSs in amorphous silicon using a superconducting resonator, where energies of TLSs are varied in time using a swept electric field. Our results show the existence of two distinct ensembles of TLSs, interacting weakly and strongly with phonons, where the latter also possesses anomalously large electric dipole moment. These results may shed new light on the low temperature characteristics of amorphous solids, and hold implications to experiments and applications in quantum devices using time-varying electric fields.
A critical limitation of solid-state quantum devices arises from the materials from which they are fabricated: uncontrolled surfaces, interfaces, and structural imperfections introduce numerous sources of loss and decoherence. Despite extensive efforts, linking these decoherence mechanisms to their microscopic material origins -- essential for developing effective mitigation strategies -- remains an outstanding challenge that has slowed coherence improvements. Here, using scanning gate microscopy on live superconducting circuits we identify a previously unrecognised decoherence mechanism originating from Coulomb blockade and microwave-driven charge tunnelling in metallic grains. Such grains are ubiquitous in thin-film devices fabricated by standard lithography processes. By characterising multiple defects across different devices, we find such defects to be as common and as debilitating to device performance as two-level system (TLS) defects, while originating from a fundamentally different physical mechanism. Importantly, conventional characterisation techniques would misattribute this loss to other, microwave power-independent processes. Our observations thus reveal a widespread source of decoherence in superconducting circuits, challenging the prevailing paradigm that coherence lifetimes are primarily limited by TLS defects. Eliminating metallic grains during fabrication provides a clear and practical route to suppress this mechanism, offering a pathway towards improved coherence and reduced noise in microwave-based solid-state quantum devices.
Superconducting films are inherently limited by losses due to two-level system (TLS) defects within the amorphous oxide layers surrounding them and from quasiparticles in the film. In this thesis I will discuss novel theoretical and experimental methods toward understanding superconducting resonator loss from deleterious surface TLS defects as well as a loss transition from non-equilibrium quasiparticles in granular TiN. I will show using finite element solver software that a resonator with submicron linewidth and linespacing can be used to better characterize and simulate surface TLS as part of a circuit QED system. I have observed individual surface TLS and found coupling values in the range of g/2π =50 kHz -280 kHz with a maximum dipole moment pz-max = 4.5 Debye (.93 eÅ). I have found in in simulation of experiment that over 80% of the strongly coupled TLS reside within 50 nm of the corner between the Metal-Substrate (MS) and Substrate-Air (SA) interface. Additionally I have studied a loss transition from non-equilibrium quasiparticles in TiN films. These films exhibit an anomalous loss dependence on substrate treatment and film thickness. The films of interest are ones grown thin on oxidized substrates, which exhibit an order of magnitude decrease in internal quality factor (Qi) relative to either thicker ˝films or films grown without the oxidized substrate. These films additionally exhibit a grain size on average of 7.5 nm, a higher inhomogeneous gap, a transition to lower stress and a preference for the [111] crystal growth. The temperature dependence of the conductivity is fit and a factor of two difference in quasiparticle lifetime is found between the two films where the thinner film has a shorter lifetime. A two gap quasiparticle trapping model is fit to the temperature dependent loss data. The data is consistent with a model where non-equilibrium quasi-particles are trapped in low gapped grains on the inside of the films. From these works and others presented in my thesis the understanding of TLSs on surfaces and non-equilibrium quasiparticles in TiN has improved. This will help illuminate some of the most important absorption mechanisms plaguing superconducting qubits and resonators.
Quantum two-level systems (TLSs) are present in the materials of qubits and are considered defects because they limit qubit coherence. For superconducting qubits, the quintessential Josephson junction barrier is made of amorphous alumina, which hosts TLSs. However, TLSs are not generally understood, either structurally or in atomic composition. In this study, we greatly extend the quantitative data available on TLSs by reporting on the physical dipole moment in two alumina types: polycrystalline $\ensuremath{\gamma}$-Al2O3{\mathrm{Al}}_{2}{\mathrm{O}}_{3}Al2​O3​ and amorphous a-AlOx\mathrm{Al}{\mathrm{O}}_{x}AlOx​. To obtain the dipole moments pz{p}_{z}pz​, rather than the less-structural coupling parameter ggg, we tune individual TLSs with a known external electric field in a cavity quantum electrodynamic system. We find a clear difference in the dipole moment distribution from the film types, indicating a difference in TLS structures. A large sample of approximately 400 individual TLSs are analyzed from the polycrystalline film type. Their dipoles along the growth direction pz{p}_{z}pz​ have a mean value of $2.6\ifmmode\pm\else\textpm\fi{}0.3$ debye (D) ($0.54\ifmmode\pm\else\textpm\fi{}0.06\phantom{\rule{0.1em}{0ex}}e$ \AA{}) and standard deviation $\ensuremath{\sigma}=1.6\ifmmode\pm\else\textpm\fi{}0.2\phantom{\rule{0.2em}{0ex}}\mathrm{D}$ ($0.33\ifmmode\pm\else\textpm\fi{}0.03\phantom{\rule{0.1em}{0ex}}e$ \AA{}). The material distribution fits well to a single Gaussian function. Approximately 200 individual TLSs are analyzed from amorphous films. Both the mean ${p}_{z}=4.6\ifmmode\pm\else\textpm\fi{}0.5\phantom{\rule{0.2em}{0ex}}\mathrm{D}$ ($0.96\ifmmode\pm\else\textpm\fi{}0.1\phantom{\rule{0.1em}{0ex}}e$ \AA{}) and $\ensuremath{\sigma}=2.5\ifmmode\pm\else\textpm\fi{}0.3\phantom{\rule{0.2em}{0ex}}\mathrm{D}$ ($0.52\ifmmode\pm\else\textpm\fi{}0.05\phantom{\rule{0.1em}{0ex}}e$ \AA{}) are larger. Amorphous alumina also has very large pz{p}_{z}pz​, greater than 8.6D8.6\phantom{\rule{0.2em}{0ex}}\mathrm{D}8.6D (1.8e1.8\phantom{\rule{0.1em}{0ex}}e1.8e \AA{}), in contrast to polycrystalline which has none of this moment. These large moments agree only with oxygen-based TLS models. Based on data and the candidate models (delocalized O and hydrogen-based TLSs), we find polycrystalline alumina has smaller ratio of O-based to H-based TLS than amorphous alumina.