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arXiv:2011.14327 · npj Quantum Information

Quantum sensors for microscopic tunneling systems

Alexander Bilmes, Serhii Volosheniuk, Jan David Brehm, Alexey Vladimirovich Ustinov, Jürgen Lisenfeld

Published Feb 5, 2021• 32 citations
arXivHTMLPDF

Abstract

Abstract The anomalous low-temperature properties of glasses arise from intrinsic excitable entities, so-called tunneling Two-Level-Systems (TLS), whose microscopic nature has been baffling solid-state physicists for decades. TLS have become particularly important for micro-fabricated quantum devices such as superconducting qubits, where they are a major source of decoherence. Here, we present a method to characterize individual TLS in virtually arbitrary materials deposited as thin films. The material is used as the dielectric in a capacitor that shunts the Josephson junction of a superconducting qubit. In such a hybrid quantum system the qubit serves as an interface to detect and control individual TLS. We demonstrate spectroscopic measurements of TLS resonances, evaluate their coupling to applied strain and DC-electric fields, and find evidence of strong interaction between coherent TLS in the sample material. Our approach opens avenues for quantum material spectroscopy to investigate the structure of tunneling defects and to develop low-loss dielectrics that are urgently required for the advancement of superconducting quantum computers.

DOI
10.1038/s41534-020-00359-x

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•Jan 1, 2016•63 citations
Abstract The anomalous low-temperature properties of glasses arise from intrinsic excitable entities, so-called tunneling Two-Level-Systems (TLS), whose microscopic nature has been baffling solid-state physicists for decades. TLS have become particularly important for micro-fabricated quantum devices such as superconducting qubits, where they are a major source of decoherence. Here, we present a method to characterize individual TLS in virtually arbitrary materials deposited as thin films. The material is used as the dielectric in a capacitor that shunts the Josephson junction of a superconducting qubit. In such a hybrid quantum system the qubit serves as an interface to detect and control individual TLS. We demonstrate spectroscopic measurements of TLS resonances, evaluate their coupling to applied strain and DC-electric fields, and find evidence of strong interaction between coherent TLS in the sample material. Our approach opens avenues for quantum material spectroscopy to investigate the structure of tunneling defects and to develop low-loss dielectrics that are urgently required for the advancement of superconducting quantum computers.
Abstract The proper functioning of some micro-fabricated novel quantum devices, such as superconducting resonators and qubits, is severely affected by the presence of parasitic structural material defects known as tunneling two-level-systems (TLS). Recent experiments have reported unambiguous evidence of the strong interaction between individual (coherent) TLS using strain-assisted spectroscopy. This work provides an alternative and simple theoretical insight that illustrates how to obtain the spectral response of such strongly interacting defects residing inside the amorphous tunnel barrier of a qubit’s Josephson junction. Moreover, the corresponding spectral signatures obtained here may serve to quickly and efficiently elucidate the actual state of these interacting TLS in experiments based on strain or electric-field spectroscopy.
Parasitic two-level tunnelling systems originating from structural material defects affect the functionality of various microfabricated devices by acting as a source of noise. In particular, superconducting quantum bits may be sensitive to even single defects when these reside in the tunnel barrier of the qubit's Josephson junctions, and this can be exploited to observe and manipulate the quantum states of individual tunnelling systems. Here, we detect and fully characterize a system of two strongly interacting defects using a novel technique for high-resolution spectroscopy. Mutual defect coupling has been conjectured to explain various anomalies of glasses, and was recently suggested as the origin of low-frequency noise in superconducting devices. Our study provides conclusive evidence of defect interactions with full access to the individual constituents, demonstrating the potential of superconducting qubits for studying material defects. All our observations are consistent with the assumption that defects are generated by atomic tunnelling.
The low-temperature physics of structurally amorphous materials is governed by low-energy two-level system (TLS) defects. Being impervious to most traditional condensed matter probes, the exact origin and nature of TLS remain elusive. Recent advances toward realizing stable high-coherence quantum computing platforms have increased the importance of studying TLS in solid-state quantum circuits, as they are a persistent source of decoherence and instability. Here, performing scanning gate microscopy on a live superconducting NbN resonator at millikelvin temperatures, we locate individual TLS, directly revealing their microscopic nature. Mapping and visualizing the most detrimental TLS in the bath pinpoints the dominant sources of ubiquitous 1/ f dielectric noise and energy relaxation. We also deduce the three-dimensional orientation of individual TLS electric dipole moments. Combining these insights with structural information of the underlying materials can help unravel the detailed microscopic nature and chemical origin of TLS, directing targeted strategies for their eventual mitigation.
Abstract Superconducting integrated circuits have demonstrated a tremendous potential to realize integrated quantum computing processors. However, the downside of the solid-state approach is that superconducting qubits suffer strongly from energy dissipation and environmental fluctuations caused by atomic-scale defects in device materials. Further progress towards upscaled quantum processors will require improvements in device fabrication techniques, which need to be guided by novel analysis methods to understand and prevent mechanisms of defect formation. Here, we present a technique to analyse individual defects in superconducting qubits by tuning them with applied electric fields. This provides a spectroscopy method to extract the defects’ energy distribution, electric dipole moments, and coherence times. Moreover, it enables one to distinguish defects residing in Josephson junction tunnel barriers from those at circuit interfaces. We find that defects at circuit interfaces are responsible for about 60% of the dielectric loss in the investigated transmon qubit sample. About 40% of all detected defects are contained in the tunnel barriers of the large-area parasitic Josephson junctions that occur collaterally in shadow evaporation, and only ≈\approx≈ ≈ 3% are identified as strongly coupled defects, which presumably reside in the small-area qubit tunnel junctions. The demonstrated technique provides a valuable tool to assess the decoherence sources related to circuit interfaces and to tunnel junctions that is readily applicable to standard qubit samples.
Recent progress with microfabricated quantum devices has revealed that an ubiquitous source of noise originates in tunneling material defects that give rise to a sparse bath of parasitic two-level systems (TLSs). For superconducting qubits, TLSs residing on electrode surfaces and in tunnel junctions account for a major part of decoherence and thus pose a serious roadblock to the realization of solid-state quantum processors. Here, we utilize a superconducting qubit to explore the quantum state evolution of coherently operated TLSs in order to shed new light on their individual properties and environmental interactions. We identify a frequency-dependence of TLS energy relaxation rates that can be explained by a coupling to phononic modes rather than by anticipated mutual TLS interactions. Most investigated TLSs are found to be free of pure dephasing at their energy degeneracy points, around which their Ramsey and spin-echo dephasing rates scale linearly and quadratically with asymmetry energy, respectively. We provide an explanation based on the standard tunneling model, and identify interaction with incoherent low-frequency (thermal) TLSs as the major mechanism of the pure dephasing in coherent high-frequency TLS.
Recent progress with microfabricated quantum devices has revealed that an ubiquitous source of noise originates in tunneling material defects that give rise to a sparse bath of parasitic two-level systems (TLSs). For superconducting qubits, TLSs residing on electrode surfaces and in tunnel junctions account for a major part of decoherence and thus pose a serious roadblock to the realization of solid-state quantum processors. Here, we utilize a superconducting qubit to explore the quantum state evolution of coherently operated TLSs in order to shed new light on their individual properties and environmental interactions. We identify a frequency-dependence of TLS energy relaxation rates that can be explained by a coupling to phononic modes rather than by anticipated mutual TLS interactions. Most investigated TLSs are found to be free of pure dephasing at their energy degeneracy points, around which their Ramsey and spin-echo dephasing rates scale linearly and quadratically with asymmetry energy, respectively. We provide an explanation based on the standard tunneling model, and identify interaction with incoherent low-frequency (thermal) TLSs as the major mechanism of the pure dephasing in coherent high-frequency TLS.