High Resolution Image Download MS PowerPoint Slide Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices that incorporate the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by the droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 ± 1.7 nm) close to the zero-phonon line of silicon-vacancy centers. Polarization entangled photons are generated via the biexciton–exciton cascade with a fidelity of (0.73 ± 0.09). High single photon purity is maintained from 4 K (g (2) (0) = 0.07 ± 0.02) up to 80 K (g (2) (0) = 0.11 ± 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications.
High Resolution Image Download MS PowerPoint Slide Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices that incorporate the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by the droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 ± 1.7 nm) close to the zero-phonon line of silicon-vacancy centers. Polarization entangled photons are generated via the biexciton–exciton cascade with a fidelity of (0.73 ± 0.09). High single photon purity is maintained from 4 K (g (2) (0) = 0.07 ± 0.02) up to 80 K (g (2) (0) = 0.11 ± 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications.
Semiconductor InAs/GaAs quantum dots grown by the Stranski-Krastanov method are among the leading candidates for the deterministic generation of polarization-entangled photon pairs. Despite remarkable progress in the past 20 years, many challenges still remain for this material, such as the extremely low yield, the low degree of entanglement and the large wavelength distribution. Here, we show that with an emerging family of GaAs/AlGaAs quantum dots grown by droplet etching and nanohole infilling, it is possible to obtain a large ensemble of polarization-entangled photon emitters on a wafer without any post-growth tuning. Under pulsed resonant two-photon excitation, all measured quantum dots emit single pairs of entangled photons with ultra-high purity, high degree of entanglement and ultra-narrow wavelength distribution at rubidium transitions. Therefore, this material system is an attractive candidate for the realization of a solid-state quantum repeater-among many other key enabling quantum photonic elements.
High Resolution Image Download MS PowerPoint Slide Spin-based, quantum-photonics promise to realize distributed quantum computing and quantum networks. The performance depends on an efficient entanglement distribution where cavity quantum electrodynamics could boost the efficiency. The central challenge is the development of compact devices with large spin-photon coupling rates and a high operation bandwidth. Photonic crystal cavities comprise strong field confinement but require highly accurate positioning of atomic systems in mode field maxima. Negatively charged silicon-vacancy centers in diamond emerged as promising atom-like systems. Spectral stability and access to long-lived, nuclear-spin memories enabled elementary demonstrations of quantum network nodes, including memory-enhanced quantum communication. In a hybrid approach, we deterministically place SiV-containing nanodiamonds inside one hole of one-dimensional, freestanding, Si 3 N 4 -based photonic crystal cavities and coherently couple individual optical transitions to cavity modes. We optimize light–matter coupling utilizing two-mode composition, waveguiding, Purcell-enhancement, and cavity-resonance tuning. The resulting photon flux increases by 14 compared to free space. Corresponding lifetime-shortening below 460 ps puts potential operation bandwidth beyond GHz rates.
On demand single-photon and entangled-photon sources are key building-blocks for many proposed photonic quantum technologies. For practical device applications, epitaxially grown quantum dots (QDs) are of increasing importance due to their bright photon emission with sharp line width. Particularly, they are solid-state systems and can be easily embedded within a light-emitting diode (LED) to achieve electrically driven sources. Therefore, one would expect a full-fledged optoelectronic quantum network that is running on macroscopically separated, QD-based single- and entangled-photon devices. An all-electrically operated wavelength-tunable on demand single-photon source (SPS) is demonstrated first. The device consists of a LED in the form of self-assembled InGaAs QDs containing nanomembrane integrated onto a piezoelectric crystal. Triggered single photons are generated via injection of ultra-short electrical pulses into the diode, while their energy can be precisely tuned over a broad range of about 4.8 meV by varying the voltage applied to the piezoelectric crystal. High speed operation of this single-photon emitting diode up to 0.8 GHz is demonstrated. In the second part of this thesis, a fast strain-tunable entangled-light-emitting diode (ELED) is demonstrated. It has been shown that the fine structure splitting of the exciton can be effectively overcome by employing a specific anisotropic strain field. By injecting ultra-fast electrical pulses to the diode, electrically triggered entangled-photon emission with high degree of entanglement is successfully realized. A statistical investigation reveals that more than 30% of the QDs in the strain-tunable quantum LED emit polarization-entangled photon-pairs with entanglement-fidelities up to f+ = 0.83(5). Driven at the highest operation speed ever reported so far (400 MHz), the strain-tunable quantum LED emerges as unique devices for high-data rate entangled-photon applications. In the end of this thesis, on demand and wavelength-tunable LH single-photon emission from strain engineered GaAs QDs is demonstrated. Fourier-transform spectroscopy is performed, from which the coherence time of the LH single-photon emission is studied. It is envisioned that this new type of LH exciton-based SPS can be applied to realize an all-semiconductor based quantum interface in the foreseeable distributed quantum networks.
High Resolution Image Download MS PowerPoint Slide Semiconductor quantum dots (QDs) enable the generation of single and entangled photons, which are useful for various applications in photonic quantum technologies. Specifically for quantum communication via fiber-optical networks, operation in the telecom C-band centered around 1550 nm is ideal. The direct generation of QD-photons in this spectral range with high quantum-optical quality, however, remained challenging. Here, we demonstrate the coherent on-demand generation of indistinguishable photons in the telecom C-band from single QD devices consisting of InAs/InP QD-mesa structures heterogeneously integrated with a metallic reflector on a silicon wafer. Using pulsed two-photon resonant excitation of the biexciton–exciton radiative cascade, we observe Rabi rotations up to pulse areas of 4π and a high single-photon purity in terms of g (2) (0) = 0.005(1) and 0.015(1) for exciton and biexciton photons, respectively. Applying two independent experimental methods, based on fitting Rabi rotations in the emission intensity and performing photon cross-correlation measurements, we consistently obtain preparation fidelities at the π-pulse exceeding 80%. Finally, performing Hong–Ou–Mandel-type two-photon interference experiments, we obtain a photon-indistinguishability of the full photon wave packet of up to 35(3)%, representing a significant advancement in the photon-indistinguishability of single photons emitted directly in the telecom C-band.
Abstract Epitaxial semiconductor quantum dots (QDs) have been demonstrated as on‐demand entangled photon sources through biexciton–exciton (XX‐X) cascaded radiative processes. However, perfect entangled photon emitters at the specific wavelengths of 880 nm or 980 nm, that are important for heralded entanglement distribution by absorptive quantum memories, remain a significant challenge. We successfully extend the QD emission wavelength to 880 nm via capping Stranski–Krastanow grown In(Ga)As/GaAs QDs with an ultra‐thin Al x Ga 1− x As layer. After carefully investigating the mechanisms governing the vanishing of wetting‐layer (WL) states and the anisotropy of QDs, we optimize the growth conditions and achieve a strong suppression of the WL emission as well as a measured minor fine structure splitting of only ∼(3.2 ± 0.25) μeV for the exciton line. We further extend this method to fabricate In(Ga)As QDs emitted at 980 nm via introducing InGaAs capping layer, and demonstrate a two‐photon resonant excitation of the biexciton without any additional optical or electrical stabilized source. These QDs with high symmetry and stability represent a highly promising platform for the generation of polarization entanglement and experiments on the interaction of photons from dissimilar sources, such as rare‐earth‐ion‐doped crystals for solid quantum memory.
We propose and analyze a hybrid quantum repeater architecture that combines two leading hardware platforms: quantum dots (QDs) as bright, deterministic sources of entangled photon pairs and group-IV-vacancy centers in diamond as efficient, heralded quantum memories. This combination leverages high-rate entanglement generation together with long-lived storage, enabling scalable entanglement distribution over long distances. A key challenge is the large bandwidth mismatch between QD photons and the narrow optical transitions of the memories. We combine a comprehensive model of the spin-photon interface, including full spin-photon coupling dynamics, and explore mitigation strategies such as frequency filtering and optimized magnetic-field orientation. Our results show that with optimized designs, photon-to-memory transfer can be achieved with high efficiency and fidelity, supporting the feasibility of such hybrid systems. Finally, we analyze a full repeater chain using experimentally achievable parameters and find that a network with thousands of memories across several repeater nodes could achieve a secret-key rate of 500 bit/s over 1,000 km, demonstrating the strong potential of this approach for next-generation quantum networks.