Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:2208.11151 · Physical Review Applied

Optimal Control of a Cavity-Mediated i SWAP Gate between Silicon Spin Qubits

Steve M. Young, N. Tobias Jacobson, J. R. Petta

Published Dec 27, 2022• 10 citations
arXivHTMLPDF

Abstract

Semiconductor spin qubits may be coupled through a superconducting cavity to generate an entangling two-qubit gate. However, the fidelity of such an operation will be reduced by a variety of error mechanisms such as charge and magnetic noise, phonons, cavity loss, transitions to nonqubit states, and, for electrons in silicon, excitation into other valley eigenstates. Here, we model the effects of these error sources and the valley degree of freedom on the performance of a cavity-mediated two-qubit $\mathrm{i}$swap gate. For valley splittings inadequately large relative to the interdot tunnel coupling within each qubit, we find that valley excitation may be a limiter to the fidelity of this two-qubit gate. In addition, we show trade-offs between gating times and exposure to various error sources, identifying optimal operating regimes and device improvements that would have the greatest impact on the fidelity of the cavity-mediated spin $\mathrm{i}$swap gate. Importantly, we find that, while the impact of charge noise and phonon relaxation favor operation in the regime where the qubits are most spinlike to reduce sensitivity to these sources of noise, the combination of hyperfine noise and valley physics shifts the optimal regime to chargelike qubits with stronger effective spin-photon coupling so that gate times can be made as short as possible. In this regime, the primary limitation is the need to avoid Landau-Zener transitions as the gate is implemented.

DOI
10.1103/physrevapplied.18.064082

Related papers

Optimized cavity-mediated dispersive two-qubit gates between spin qubits

Mónica Benito, J. R. Petta, Guido Burkard

The recent realization of a coherent interface between a single electron in a silicon quantum dot and a single photon trapped in a superconducting cavity opens the way for implementing photon-mediated two-qubit entangling gates. In order to couple a spin to the cavity electric field, some type of spin-charge hybridization is needed, which impacts spin control and coherence. In this work we propose a cavity-mediated two-qubit gate and calculate cavity-mediated entangling gate fidelities in the dispersive regime, accounting for errors due to the spin-charge hybridization, as well as photon- and phonon-induced decays. By optimizing the degree of spin-charge hybridization, we show that two-qubit gates mediated by cavity photons are capable of reaching fidelities exceeding $90%$ in present-day device architectures. High iswap gate fidelities are achievable even in the presence of charge noise at the level of $2\phantom{\rule{0.28em}{0ex}}\ensuremath{\mu}\text{eV}$.

arXiv:1902.07649•Physical review. B./Physical review. B•Aug 29, 2019•80 citations

Valley leakage and gate timing errors in SWAP operations of Si-based spin qubits.

Nathan L. Foulk, Robert E. Throckmorton, S. Das Sarma

We investigate the fidelity of a sequence of SWAP gates on a Si-based quantum dot (QD) spin qubit chain. We particularly examine how valley leakage and gate timing error affect the gate fidelity compared to charge noise, which is always present. In our Hamiltonian, each qubit is coupled via Heisenberg exchange to every other qubit in the chain, with the strength of the exchange interaction decreasing exponentially with qubit distance. Valley leakage is modeled through a dissipation term $\gamma$ as appropriate for the experimentally observed intervalley tunneling effect. We show that randomness in the valley leakage parameter has little to no effect on the SWAP gate fidelity in the currently fabricated Si circuits. We introduce disorder in the forms of charge noise and gate timing error and average the fidelities of 10,000 calculations for each set of parameters. The fidelities are then plotted against $J_\text{SWAP}$, the strength of the exchange coupling corresponding to the SWAP gate. We find that valley leakage decreases the fidelity of the SWAP operation -- though the effect is small compared to that of the known charge noise -- and that gate timing error creates an effective optimal value of $J_\text{SWAP}$, beyond which infidelity begins to increase.

•Oct 21, 2021•0 citations

Dynamics and optimized quantum control of interacting spin qubits in semiconductor quantum dot arrays

Irina Heinz

The growing interest in quantum computers has triggered various approaches for the realization of a large-scale quantum processor that can eventually outperform classical high-performance computers. Quantum computers are attracting increasing attention for their potential to enormously accelerate the simulation of quantum systems and the solution of optimization problems, promising an immense impact, particularly in fields such as chemistry, medicine, and cybersecurity. Although it is still a long way to a practical quantum device, the progress over the last decades has shown encouraging results for a so far limited number of quantum bits, or qubits for short, which represent the computational units of the processor. One promising platform for the implementation of qubits is the spin of charge carriers in semiconductor quantum dots. Especially the use of purified silicon as a host material has significantly improved the performance of quantum operations. Advanced fabrication techniques from the established semiconductor industry in principle allow for the manufacturing of a large number of qubits on a small chip, making them specifically competitive from the perspective of scalability. In this thesis, we investigate challenges for electron spin qubits, particularly in the context of scaling to large qubit arrays for quantum computation. We evaluate the performance of quantum gates, present error mitigation strategies, and propose new quantum operations for two particular spin qubit implementations. In a dense array of Loss-DiVincenzo spin qubits on a chip, quantum information can be electrically controlled by microwave pulses. For neighboring qubits, capacitive couplings of nearby electrodes lead to crosstalk that affects the quantum computation. The first examination in this thesis addresses the effect of crosstalk on idling and operating spin qubits due to an interfering microwave drive. After the analysis and characterization of the performance, we suggest mitigation protocols for different constellations of important quantum gates, which can be easily implemented experimentally. We further show how to reduce crosstalk in a two-qubit gate using an asymmetric driving scheme, resulting in an enormous improvement of the gate performance, and may be used to generally overcome the obstacle of crosstalk. An additional source of errors in spin qubit registers originates from the finite residual exchange interaction between neighboring qubits. It arises due to a finite overlap of the electron wave functions and is caused by the limited speed at which the applied voltages can be controlled. We evaluate the fidelity of doing quantum operations under these circumstances with a varying number of neighboring qubits and present robust mitigation schemes with a decent performance also in the presence of noise. Besides crosstalk, another crucial observation in experiments using microwaves is the heating caused by the delivery of high-power radio frequency pulses to the quantum chip and results in a change of the qubit properties. We therefore investigate the impact of phonons on the energy levels in spin qubits to identify a temperature-dependent correction to the qubit state splitting. As microwave pulses are associated with potential errors, exchange-only qubits represent a promising alternative to achieve universal quantum computation only using baseband control. Therefore, we shift our focus towards exchange-only qubits and outline the main error sources in these systems, including residual exchange interactions between spins, charge noise from the applied voltages, and magnetic fluctuations in the material. A consequential complication of this implementation is that the quantum information can leak out of the qubit states. This effect, however, can be reduced in the presence of a finite magnetic field, as we will demonstrate in this thesis. The gate construction for exchange-only qubits usually requires more pulse steps than in the previous qubit type. Nevertheless, if exchange interactions are switched on simultaneously, this can result in faster quantum gates, as we demonstrate in this thesis. Especially the discovery of a quantum operation that introduces relative phases between computational and leakage states can be of interest for the construction of two-qubit gates and will be discussed in an example for a special operation space.

•Jan 1, 2024•0 citations

Modeling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation

M. Mohamed El Kordy Shehata, George Simion, Ruoyu Li +7 more

The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of the existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit's energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced spin-orbit interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a comodeling framework for double quantum dot (DQD) devices and their charge noise environments. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods, and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two-qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities $>97%$ in the simulated Si-MOS devices at a typical TLF density of ${10}^{11}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to $91%$ in the presence of the same density of TLFs. We further investigate the one- and two-qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities, which can compromise the device yields in scaled qubit technologies.

arXiv:2210.04539•Physical review. B./Physical review. B•Jul 13, 2023•40 citations

Cavity Mediated Two-Qubit Gate: Tuning to Optimal Performance with NISQ Era Quantum Simulations

Shreekanth S. Yuvarajan, Vincent Iglesias-Cardinale, David Hucul +1 more

A variety of photon-mediated operations are critical to the realization of scalable quantum information processing platforms and their accurate characterization is essential for the identification of optimal regimes and their experimental realizations. Such light-matter interactions are often studied with a broad variety of analytical and computational methods that are constrained by approximation techniques or by computational scaling. Quantum processors present a new avenue to address these challenges. We consider the case of cavity mediated two-qubit gates. To investigate quantum state transfer between the qubits, we implement simulations with quantum circuits that are able to reliably track the dynamics of the system. Our quantum algorithm, compatible with NISQ (Noisy Intermediate Scale Quantum) era systems, allows us to map out the fidelity of the state transfer operation between qubits as a function of a broad range of system parameters including the respective detunings between the qubits and the cavity, the damping factor of the cavity, and the respective couplings between the qubits and the cavity. The algorithm provides a robust and intuitive solution, alongside a satisfactory agreement with analytical solutions or classical simulation algorithms in their respective regimes of validity. It allows us to identify under-explored regimes of optimal performance, relevant for heterogeneous quantum platforms, where the two-qubit gate can be rather effective between far-detuned qubits that are neither resonant with each other nor with the cavity. Besides its present application, the method introduced in the current paper can be efficiently used in otherwise untractable variations of the model and in various efforts to simulate and optimize photon-mediated two-qubit gates and other relevant operations in quantum information processing.

quant-pharXiv:2512.12030•Physical Review Research•Dec 16, 2025•0 citations

Dissipation and gate timing errors in SWAP operations of qubits

Nathan L. Foulk, Robert E. Throckmorton, S. Das Sarma

We examine how dissipation and gate timing errors affect the fidelity of a sequence of swap gates on a chain of interacting qubits in comparison to noise in the interqubit interaction. Although interqubit interaction noise and gate timing errors are always present in any qubit platform, dissipation is a special case that can arise in multivalley semiconductor spin qubit systems, such as Si-based qubits, where dissipation may be used as a general model for valley leakage. In our Hamiltonian, each qubit is coupled via Heisenberg exchange to every other qubit in the chain, with the strength of the exchange interaction decreasing exponentially with distance between the qubits. Dissipation is modeled through the term $\ensuremath{-}i\ensuremath{\gamma}\mathbf{1}$ in the Hamiltonian, and $\ensuremath{\gamma}$ is chosen so as to be consistent with the experimentally observed intervalley tunneling in Si. We show that randomness in the dissipation parameter should have little to no effect on the swap gate fidelity in the currently fabricated Si circuits. We introduce quasistatic noise in the interqubit interaction and random gate timing error and average the fidelities over 10 000 realizations for each set of parameters. The fidelities are then plotted against ${J}_{\mathrm{SWAP}}$, the strength of the exchange coupling corresponding to the swap gate. We find that dissipation decreases the fidelity of the swap operation---though the effect is small compared to that of the known noise in the interqubit interaction---and that gate timing error creates an effective optimal value of ${J}_{\mathrm{SWAP}}$, beyond which infidelity begins to increase.

arXiv:2110.11329•Physical review. B./Physical review. B•Apr 14, 2022•4 citations
Semiconductor spin qubits may be coupled through a superconducting cavity to generate an entangling two-qubit gate. However, the fidelity of such an operation will be reduced by a variety of error mechanisms such as charge and magnetic noise, phonons, cavity loss, transitions to nonqubit states, and, for electrons in silicon, excitation into other valley eigenstates. Here, we model the effects of these error sources and the valley degree of freedom on the performance of a cavity-mediated two-qubit i\mathrm{i}iswap gate. For valley splittings inadequately large relative to the interdot tunnel coupling within each qubit, we find that valley excitation may be a limiter to the fidelity of this two-qubit gate. In addition, we show trade-offs between gating times and exposure to various error sources, identifying optimal operating regimes and device improvements that would have the greatest impact on the fidelity of the cavity-mediated spin i\mathrm{i}iswap gate. Importantly, we find that, while the impact of charge noise and phonon relaxation favor operation in the regime where the qubits are most spinlike to reduce sensitivity to these sources of noise, the combination of hyperfine noise and valley physics shifts the optimal regime to chargelike qubits with stronger effective spin-photon coupling so that gate times can be made as short as possible. In this regime, the primary limitation is the need to avoid Landau-Zener transitions as the gate is implemented.
The recent realization of a coherent interface between a single electron in a silicon quantum dot and a single photon trapped in a superconducting cavity opens the way for implementing photon-mediated two-qubit entangling gates. In order to couple a spin to the cavity electric field, some type of spin-charge hybridization is needed, which impacts spin control and coherence. In this work we propose a cavity-mediated two-qubit gate and calculate cavity-mediated entangling gate fidelities in the dispersive regime, accounting for errors due to the spin-charge hybridization, as well as photon- and phonon-induced decays. By optimizing the degree of spin-charge hybridization, we show that two-qubit gates mediated by cavity photons are capable of reaching fidelities exceeding 9090%90 in present-day device architectures. High iswap gate fidelities are achievable even in the presence of charge noise at the level of $2\phantom{\rule{0.28em}{0ex}}\ensuremath{\mu}\text{eV}$.
We investigate the fidelity of a sequence of SWAP gates on a Si-based quantum dot (QD) spin qubit chain. We particularly examine how valley leakage and gate timing error affect the gate fidelity compared to charge noise, which is always present. In our Hamiltonian, each qubit is coupled via Heisenberg exchange to every other qubit in the chain, with the strength of the exchange interaction decreasing exponentially with qubit distance. Valley leakage is modeled through a dissipation term γ\gammaγ as appropriate for the experimentally observed intervalley tunneling effect. We show that randomness in the valley leakage parameter has little to no effect on the SWAP gate fidelity in the currently fabricated Si circuits. We introduce disorder in the forms of charge noise and gate timing error and average the fidelities of 10,000 calculations for each set of parameters. The fidelities are then plotted against JSWAPJ_\text{SWAP}JSWAP​, the strength of the exchange coupling corresponding to the SWAP gate. We find that valley leakage decreases the fidelity of the SWAP operation -- though the effect is small compared to that of the known charge noise -- and that gate timing error creates an effective optimal value of JSWAPJ_\text{SWAP}JSWAP​, beyond which infidelity begins to increase.
The growing interest in quantum computers has triggered various approaches for the realization of a large-scale quantum processor that can eventually outperform classical high-performance computers. Quantum computers are attracting increasing attention for their potential to enormously accelerate the simulation of quantum systems and the solution of optimization problems, promising an immense impact, particularly in fields such as chemistry, medicine, and cybersecurity. Although it is still a long way to a practical quantum device, the progress over the last decades has shown encouraging results for a so far limited number of quantum bits, or qubits for short, which represent the computational units of the processor. One promising platform for the implementation of qubits is the spin of charge carriers in semiconductor quantum dots. Especially the use of purified silicon as a host material has significantly improved the performance of quantum operations. Advanced fabrication techniques from the established semiconductor industry in principle allow for the manufacturing of a large number of qubits on a small chip, making them specifically competitive from the perspective of scalability. In this thesis, we investigate challenges for electron spin qubits, particularly in the context of scaling to large qubit arrays for quantum computation. We evaluate the performance of quantum gates, present error mitigation strategies, and propose new quantum operations for two particular spin qubit implementations. In a dense array of Loss-DiVincenzo spin qubits on a chip, quantum information can be electrically controlled by microwave pulses. For neighboring qubits, capacitive couplings of nearby electrodes lead to crosstalk that affects the quantum computation. The first examination in this thesis addresses the effect of crosstalk on idling and operating spin qubits due to an interfering microwave drive. After the analysis and characterization of the performance, we suggest mitigation protocols for different constellations of important quantum gates, which can be easily implemented experimentally. We further show how to reduce crosstalk in a two-qubit gate using an asymmetric driving scheme, resulting in an enormous improvement of the gate performance, and may be used to generally overcome the obstacle of crosstalk. An additional source of errors in spin qubit registers originates from the finite residual exchange interaction between neighboring qubits. It arises due to a finite overlap of the electron wave functions and is caused by the limited speed at which the applied voltages can be controlled. We evaluate the fidelity of doing quantum operations under these circumstances with a varying number of neighboring qubits and present robust mitigation schemes with a decent performance also in the presence of noise. Besides crosstalk, another crucial observation in experiments using microwaves is the heating caused by the delivery of high-power radio frequency pulses to the quantum chip and results in a change of the qubit properties. We therefore investigate the impact of phonons on the energy levels in spin qubits to identify a temperature-dependent correction to the qubit state splitting. As microwave pulses are associated with potential errors, exchange-only qubits represent a promising alternative to achieve universal quantum computation only using baseband control. Therefore, we shift our focus towards exchange-only qubits and outline the main error sources in these systems, including residual exchange interactions between spins, charge noise from the applied voltages, and magnetic fluctuations in the material. A consequential complication of this implementation is that the quantum information can leak out of the qubit states. This effect, however, can be reduced in the presence of a finite magnetic field, as we will demonstrate in this thesis. The gate construction for exchange-only qubits usually requires more pulse steps than in the previous qubit type. Nevertheless, if exchange interactions are switched on simultaneously, this can result in faster quantum gates, as we demonstrate in this thesis. Especially the discovery of a quantum operation that introduces relative phases between computational and leakage states can be of interest for the construction of two-qubit gates and will be discussed in an example for a special operation space.
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of the existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit's energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced spin-orbit interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a comodeling framework for double quantum dot (DQD) devices and their charge noise environments. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods, and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two-qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97>97%>97 in the simulated Si-MOS devices at a typical TLF density of ${10}^{11}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 9191%91 in the presence of the same density of TLFs. We further investigate the one- and two-qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities, which can compromise the device yields in scaled qubit technologies.
A variety of photon-mediated operations are critical to the realization of scalable quantum information processing platforms and their accurate characterization is essential for the identification of optimal regimes and their experimental realizations. Such light-matter interactions are often studied with a broad variety of analytical and computational methods that are constrained by approximation techniques or by computational scaling. Quantum processors present a new avenue to address these challenges. We consider the case of cavity mediated two-qubit gates. To investigate quantum state transfer between the qubits, we implement simulations with quantum circuits that are able to reliably track the dynamics of the system. Our quantum algorithm, compatible with NISQ (Noisy Intermediate Scale Quantum) era systems, allows us to map out the fidelity of the state transfer operation between qubits as a function of a broad range of system parameters including the respective detunings between the qubits and the cavity, the damping factor of the cavity, and the respective couplings between the qubits and the cavity. The algorithm provides a robust and intuitive solution, alongside a satisfactory agreement with analytical solutions or classical simulation algorithms in their respective regimes of validity. It allows us to identify under-explored regimes of optimal performance, relevant for heterogeneous quantum platforms, where the two-qubit gate can be rather effective between far-detuned qubits that are neither resonant with each other nor with the cavity. Besides its present application, the method introduced in the current paper can be efficiently used in otherwise untractable variations of the model and in various efforts to simulate and optimize photon-mediated two-qubit gates and other relevant operations in quantum information processing.
We examine how dissipation and gate timing errors affect the fidelity of a sequence of swap gates on a chain of interacting qubits in comparison to noise in the interqubit interaction. Although interqubit interaction noise and gate timing errors are always present in any qubit platform, dissipation is a special case that can arise in multivalley semiconductor spin qubit systems, such as Si-based qubits, where dissipation may be used as a general model for valley leakage. In our Hamiltonian, each qubit is coupled via Heisenberg exchange to every other qubit in the chain, with the strength of the exchange interaction decreasing exponentially with distance between the qubits. Dissipation is modeled through the term $\ensuremath{-}i\ensuremath{\gamma}\mathbf{1}$ in the Hamiltonian, and $\ensuremath{\gamma}$ is chosen so as to be consistent with the experimentally observed intervalley tunneling in Si. We show that randomness in the dissipation parameter should have little to no effect on the swap gate fidelity in the currently fabricated Si circuits. We introduce quasistatic noise in the interqubit interaction and random gate timing error and average the fidelities over 10 000 realizations for each set of parameters. The fidelities are then plotted against JSWAP{J}_{\mathrm{SWAP}}JSWAP​, the strength of the exchange coupling corresponding to the swap gate. We find that dissipation decreases the fidelity of the swap operation---though the effect is small compared to that of the known noise in the interqubit interaction---and that gate timing error creates an effective optimal value of JSWAP{J}_{\mathrm{SWAP}}JSWAP​, beyond which infidelity begins to increase.