We construct a class of exact ground states of three-dimensional periodic Anderson models (PAMs), including the conventional PAM, on regular Bravais lattices at and above
3∕4 filling, and discuss their physical properties. In general, the
f electrons can have a (weak) dispersion, and the hopping and the nonlocal hybridization of the
d and
f electrons extend over the unit cell. The construction is performed in two steps. First the Hamiltonian is cast into positive semidefinite form using composite operators in combination with coupled nonlinear matching conditions. This may be achieved in several ways, thus leading to solutions in different regions of the phase diagram. In a second step, a nonlocal product wave function in position space is constructed which allows one to identify various stability regions corresponding to insulating and conducting states. The compressibility of the insulating state is shown to diverge at the boundary of its stability regime. The metallic phase is a non-Fermi-liquid with one dispersing and one flat band. This state is also an exact ground state of the conventional PAM and has the following properties: (i) it is nonmagnetic with spin-spin correlations disappearing in the thermodynamic limit, (ii) density-density correlations are short ranged, and (iii) the momentum distributions of the interacting electrons are analytic functions, i.e., have no discontinuities even in their derivatives. The stability regions of the ground states extend through a large region of parameter space, e.g., from weak to strong on-site interaction
U. Exact itinerant, ferromagnetic ground states are found at and below
1∕4 filling.
The ground-state energy, wave-function, hybridization gap and magnetic phasediagram of the Single Site Impurity Anderson Model (SIAM) and the Periodic AndersonModel (PAM) were calculated using Exact-Diagonalization (ED) technique. The EDtechnique was applied to the SIAM and PAM in one dimension before speculating on Ce 4fbeing a test bed of the results, since it has 4f localized electrons in the Heavy fermioncompound CeCu2Si2. Each of the results obtained describe the evolution of the electronicsystem in terms of a simple set of parameters.The parameter regimes studied suggest asmooth phase transition from an antiferromagnetic (AFM) phase to a ferromagnetic (FM)phase at quarter fillings in one dimension when t increases and a magnetic instability wasobserved as U → ∞. The role of hybridization between the conduction electrons and thelocalized f orbital in the Anderson impurity in a semiconductor was also investigated as Vincreases in the SIAM and the PAM.