Journal of Innovative Research in Engineering and Sciences
Analysis of Ground State Properties of Interacting Electrons in the Anderson Model
Omamoke O. E. Enaroseha, John Andikara
Abstract
The ground-state energy, wave-function, hybridization gap and magnetic phasediagram of the Single Site Impurity Anderson Model (SIAM) and the Periodic AndersonModel (PAM) were calculated using Exact-Diagonalization (ED) technique. The EDtechnique was applied to the SIAM and PAM in one dimension before speculating on Ce 4fbeing a test bed of the results, since it has 4f localized electrons in the Heavy fermioncompound CeCu2Si2. Each of the results obtained describe the evolution of the electronicsystem in terms of a simple set of parameters.The parameter regimes studied suggest asmooth phase transition from an antiferromagnetic (AFM) phase to a ferromagnetic (FM)phase at quarter fillings in one dimension when t increases and a magnetic instability wasobserved as U → ∞. The role of hybridization between the conduction electrons and thelocalized f orbital in the Anderson impurity in a semiconductor was also investigated as Vincreases in the SIAM and the PAM.